SG11201700904UA - Gcib nozzle assembly - Google Patents

Gcib nozzle assembly

Info

Publication number
SG11201700904UA
SG11201700904UA SG11201700904UA SG11201700904UA SG11201700904UA SG 11201700904U A SG11201700904U A SG 11201700904UA SG 11201700904U A SG11201700904U A SG 11201700904UA SG 11201700904U A SG11201700904U A SG 11201700904UA SG 11201700904U A SG11201700904U A SG 11201700904UA
Authority
SG
Singapore
Prior art keywords
gcib
nozzle assembly
nozzle
assembly
gcib nozzle
Prior art date
Application number
SG11201700904UA
Inventor
Matthew C Gwinn
Avrum Freytsis
Robert K Becker
Original Assignee
Tel Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tel Epion Inc filed Critical Tel Epion Inc
Publication of SG11201700904UA publication Critical patent/SG11201700904UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/0203Protection arrangements
    • H01J2237/0206Extinguishing, preventing or controlling unwanted discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/061Construction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • H01J2237/0812Ionized cluster beam [ICB] sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/08Ion sources
    • H01J2237/0822Multiple sources
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/31Processing objects on a macro-scale
    • H01J2237/3151Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
SG11201700904UA 2014-08-05 2015-07-31 Gcib nozzle assembly SG11201700904UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462033253P 2014-08-05 2014-08-05
PCT/US2015/043203 WO2016022427A2 (en) 2014-08-05 2015-07-31 Gcib nozzle assembly

Publications (1)

Publication Number Publication Date
SG11201700904UA true SG11201700904UA (en) 2017-03-30

Family

ID=55264745

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201700904UA SG11201700904UA (en) 2014-08-05 2015-07-31 Gcib nozzle assembly

Country Status (8)

Country Link
US (1) US9343259B2 (en)
EP (1) EP3178105B1 (en)
JP (2) JP6406734B2 (en)
KR (1) KR102467978B1 (en)
CN (1) CN106688075B (en)
SG (1) SG11201700904UA (en)
TW (1) TWI588861B (en)
WO (1) WO2016022427A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107146752A (en) * 2017-06-26 2017-09-08 武汉大学 A kind of method and device of visualizing gas cluster ions jet
CN107393794B (en) * 2017-08-07 2019-09-10 深圳江海行纳米科技有限公司 A kind of gas-cluster ion sources production method and device
CN113639955B (en) * 2021-10-15 2022-01-04 中国空气动力研究与发展中心计算空气动力研究所 Device for measuring concave panel boundary layer disturbance
US20240096592A1 (en) * 2022-09-15 2024-03-21 Applied Materials Israel Ltd. Optimized saddle nozzle design for gas injection system

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09119915A (en) * 1996-11-01 1997-05-06 Hitachi Ltd Ionization and mass spectrometry apparatus for sample
US6613240B2 (en) * 1999-12-06 2003-09-02 Epion Corporation Method and apparatus for smoothing thin conductive films by gas cluster ion beam
JP3398352B2 (en) * 2000-01-20 2003-04-21 株式会社つくばナノ・テクノロジー Cluster ion beam generator
US7670964B2 (en) * 2007-03-22 2010-03-02 Tokyo Electron Limited Apparatus and methods of forming a gas cluster ion beam using a low-pressure source
US8981322B2 (en) * 2009-02-04 2015-03-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US20100243913A1 (en) * 2009-03-31 2010-09-30 Tel Epion Inc. Pre-aligned nozzle/skimmer
TWI416577B (en) * 2009-04-23 2013-11-21 Tel Epion Inc Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
US8217372B2 (en) * 2009-06-30 2012-07-10 Exogenesis Corporation Gas-cluster-jet generator and gas-cluster ion-beam apparatus utilizing an improved gas-cluster-jet generator
US20110240602A1 (en) * 2010-03-30 2011-10-06 Tel Epion Inc. High-voltage gas cluster ion beam (gcib) processing system
JP5236687B2 (en) * 2010-05-26 2013-07-17 兵庫県 Surface treatment method and surface treatment apparatus
WO2012027330A1 (en) * 2010-08-23 2012-03-01 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US20130082189A1 (en) * 2011-09-30 2013-04-04 Tel Epion Inc. Pre-aligned multi-beam nozzle/skimmer module
JP6108975B2 (en) * 2013-06-18 2017-04-05 株式会社アルバック Gas cluster ion beam system
US8993982B2 (en) * 2013-07-15 2015-03-31 Vg Systems Limited Switchable ion gun with improved gas inlet arrangement

Also Published As

Publication number Publication date
CN106688075B (en) 2018-08-24
JP2017527075A (en) 2017-09-14
JP6625707B2 (en) 2019-12-25
EP3178105B1 (en) 2019-09-25
CN106688075A (en) 2017-05-17
US20160042909A1 (en) 2016-02-11
KR20170041806A (en) 2017-04-17
KR102467978B1 (en) 2022-11-16
WO2016022427A3 (en) 2016-03-31
WO2016022427A2 (en) 2016-02-11
JP2019050203A (en) 2019-03-28
EP3178105A2 (en) 2017-06-14
TW201624519A (en) 2016-07-01
US9343259B2 (en) 2016-05-17
TWI588861B (en) 2017-06-21
JP6406734B2 (en) 2018-10-17
EP3178105A4 (en) 2018-04-25

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