SG11201606426QA - Modulation of magnetic properties through implantation and associated structures - Google Patents

Modulation of magnetic properties through implantation and associated structures

Info

Publication number
SG11201606426QA
SG11201606426QA SG11201606426QA SG11201606426QA SG11201606426QA SG 11201606426Q A SG11201606426Q A SG 11201606426QA SG 11201606426Q A SG11201606426Q A SG 11201606426QA SG 11201606426Q A SG11201606426Q A SG 11201606426QA SG 11201606426Q A SG11201606426Q A SG 11201606426QA
Authority
SG
Singapore
Prior art keywords
implantation
modulation
magnetic properties
associated structures
structures
Prior art date
Application number
SG11201606426QA
Inventor
Christopher J Wiegand
Md Tofizur Rahman
Oleg Golonzka
Anant H Jahagirdar
Mengcheng Lu
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of SG11201606426QA publication Critical patent/SG11201606426QA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
SG11201606426QA 2014-03-28 2014-03-28 Modulation of magnetic properties through implantation and associated structures SG11201606426QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/032240 WO2015147875A1 (en) 2014-03-28 2014-03-28 Modulation of magnetic properties through implantation and associated structures

Publications (1)

Publication Number Publication Date
SG11201606426QA true SG11201606426QA (en) 2016-09-29

Family

ID=54196189

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606426QA SG11201606426QA (en) 2014-03-28 2014-03-28 Modulation of magnetic properties through implantation and associated structures

Country Status (7)

Country Link
US (1) US10079266B2 (en)
EP (1) EP3123475A4 (en)
KR (1) KR102244115B1 (en)
CN (1) CN106030717B (en)
SG (1) SG11201606426QA (en)
TW (1) TWI610300B (en)
WO (1) WO2015147875A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636875B1 (en) * 2019-01-21 2020-04-28 Northrop Grumman Systems Corporation Localized tunneling enhancement for semiconductor devices
CN114068613A (en) * 2020-08-05 2022-02-18 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6812040B2 (en) * 2002-03-12 2004-11-02 Freescale Semiconductor, Inc. Method of fabricating a self-aligned via contact for a magnetic memory element
US7199055B2 (en) * 2003-03-03 2007-04-03 Cypress Semiconductor Corp. Magnetic memory cell junction and method for forming a magnetic memory cell junction
US7211446B2 (en) 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
JP5072012B2 (en) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US8133745B2 (en) * 2007-10-17 2012-03-13 Magic Technologies, Inc. Method of magnetic tunneling layer processes for spin-transfer torque MRAM
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
KR101686553B1 (en) * 2010-07-12 2016-12-14 삼성전자 주식회사 Chip Stacked Package and Package on Package
KR101127766B1 (en) * 2011-01-24 2012-03-16 주식회사 하이닉스반도체 Method for fabricating magnetic tunnel junction
US8815720B2 (en) 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece
JP5535161B2 (en) * 2011-09-20 2014-07-02 株式会社東芝 Magnetoresistive element and manufacturing method thereof
US8823118B2 (en) 2012-01-05 2014-09-02 Headway Technologies, Inc. Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer
JP5659181B2 (en) 2012-03-21 2015-01-28 株式会社東芝 Method for manufacturing magnetoresistive element
US9070854B2 (en) * 2012-04-27 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Techniques for patterning multilayer magnetic memory devices using ion implantation
KR20140008745A (en) 2012-07-11 2014-01-22 삼성전자주식회사 Magenetic random access memory
US9059398B2 (en) * 2012-08-03 2015-06-16 Applied Materials, Inc. Methods for etching materials used in MRAM applications
KR102152145B1 (en) * 2013-09-09 2020-09-07 삼성전자주식회사 Magnetic memory device and method of manufacturing the same

Also Published As

Publication number Publication date
KR102244115B1 (en) 2021-04-26
KR20160138388A (en) 2016-12-05
US20170005136A1 (en) 2017-01-05
US10079266B2 (en) 2018-09-18
WO2015147875A1 (en) 2015-10-01
TW201601148A (en) 2016-01-01
CN106030717A (en) 2016-10-12
CN106030717B (en) 2019-10-01
EP3123475A1 (en) 2017-02-01
TWI610300B (en) 2018-01-01
EP3123475A4 (en) 2017-11-22

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