SG11201601378QA - A semiconductor wafer and a method for producing the semiconductor wafer - Google Patents
A semiconductor wafer and a method for producing the semiconductor waferInfo
- Publication number
- SG11201601378QA SG11201601378QA SG11201601378QA SG11201601378QA SG11201601378QA SG 11201601378Q A SG11201601378Q A SG 11201601378QA SG 11201601378Q A SG11201601378Q A SG 11201601378QA SG 11201601378Q A SG11201601378Q A SG 11201601378QA SG 11201601378Q A SG11201601378Q A SG 11201601378QA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafer
- producing
- wafer
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13185824 | 2013-09-24 | ||
EP13197888 | 2013-12-17 | ||
PCT/EP2014/069338 WO2015043961A1 (en) | 2013-09-24 | 2014-09-11 | A semiconductor wafer and a method for producing the semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201601378QA true SG11201601378QA (en) | 2016-04-28 |
Family
ID=51518780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201601378QA SG11201601378QA (en) | 2013-09-24 | 2014-09-11 | A semiconductor wafer and a method for producing the semiconductor wafer |
Country Status (8)
Country | Link |
---|---|
US (1) | US9923050B2 (en) |
EP (1) | EP3050075A1 (en) |
JP (1) | JP2016533643A (en) |
KR (1) | KR20160063360A (en) |
CN (1) | CN105684125A (en) |
SG (1) | SG11201601378QA (en) |
TW (1) | TW201513176A (en) |
WO (1) | WO2015043961A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6933265B2 (en) * | 2017-12-19 | 2021-09-08 | 株式会社Sumco | Method for manufacturing group III nitride semiconductor substrate |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10128630A1 (en) * | 2001-06-13 | 2003-01-02 | Freiberger Compound Mat Gmbh | Device and method for determining the orientation of a crystallographic plane relative to a crystal surface and device and method for separating a single crystal in a separating machine |
US8193020B2 (en) * | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
US7544591B2 (en) * | 2007-01-18 | 2009-06-09 | Hewlett-Packard Development Company, L.P. | Method of creating isolated electrodes in a nanowire-based device |
US7598108B2 (en) | 2007-07-06 | 2009-10-06 | Sharp Laboratories Of America, Inc. | Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
DE102008026784A1 (en) * | 2008-06-04 | 2009-12-10 | Siltronic Ag | Epitaxial silicon wafer with <110> crystal orientation and process for its preparation |
JP2011187654A (en) * | 2010-03-08 | 2011-09-22 | Toyoda Gosei Co Ltd | Hemt composed of group-iii nitride semiconductor, and method of manufacturing the same |
JP5919703B2 (en) * | 2011-06-24 | 2016-05-18 | サンケン電気株式会社 | Semiconductor device |
US20130082274A1 (en) * | 2011-09-29 | 2013-04-04 | Bridgelux, Inc. | Light emitting devices having dislocation density maintaining buffer layers |
-
2014
- 2014-09-11 SG SG11201601378QA patent/SG11201601378QA/en unknown
- 2014-09-11 JP JP2016541929A patent/JP2016533643A/en active Pending
- 2014-09-11 KR KR1020167010752A patent/KR20160063360A/en not_active Application Discontinuation
- 2014-09-11 WO PCT/EP2014/069338 patent/WO2015043961A1/en active Application Filing
- 2014-09-11 EP EP14761869.8A patent/EP3050075A1/en not_active Ceased
- 2014-09-11 US US15/023,553 patent/US9923050B2/en not_active Expired - Fee Related
- 2014-09-11 CN CN201480052751.6A patent/CN105684125A/en active Pending
- 2014-09-22 TW TW103132612A patent/TW201513176A/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20160233293A1 (en) | 2016-08-11 |
US9923050B2 (en) | 2018-03-20 |
TW201513176A (en) | 2015-04-01 |
EP3050075A1 (en) | 2016-08-03 |
CN105684125A (en) | 2016-06-15 |
JP2016533643A (en) | 2016-10-27 |
WO2015043961A1 (en) | 2015-04-02 |
KR20160063360A (en) | 2016-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
HK1214408A1 (en) | Semiconductor device and method for manufacturing same | |
HK1205357A1 (en) | Semiconductor device and method for manufacturing the same | |
TWI562209B (en) | Semiconductor device and method for manufacturing the same | |
EP2930741A4 (en) | Semiconductor device and method for manufacturing semiconductor device | |
SG10201406149PA (en) | Semiconductor Device And Method For Manufacturing The Same | |
SG10201912585TA (en) | Semiconductor device and method for manufacturing the same | |
EP2985790A4 (en) | Semiconductor device and semiconductor device manufacturing method | |
SG11201504825RA (en) | Semiconductor device and method for manufacturing the same | |
HK1210869A1 (en) | Semiconductor device and method for manufacturing the same | |
EP2985614A4 (en) | Production method for semiconductor device | |
EP2960925A4 (en) | Composite substrate, semiconductor device and method for manufacturing semiconductor device | |
HK1219347A1 (en) | Semiconductor device and manufacturing method for same | |
EP2955748A4 (en) | Semiconductor device and method for manufacturing same | |
SG11201508291QA (en) | Semiconductor device and method for manufacturing semiconductor device | |
EP3067920A4 (en) | Semiconductor device and method for producing same | |
TWI562316B (en) | Semiconductor device and method for fabricating the same | |
SG11201803021YA (en) | Monocrystalline semiconductor wafer and method for producing a semiconductor wafer | |
SG11201601359VA (en) | Method for producing mirror-polished wafer | |
EP2919273A4 (en) | Method for manufacturing semiconductor device | |
SG11201510008UA (en) | Semiconductor device and manufacturing method therefor | |
EP2966674A4 (en) | Method for manufacturing silicon-carbide semiconductor device | |
EP2953171A4 (en) | Semiconductor optical device, and method for manufacturing semiconductor optical device | |
HK1201983A1 (en) | Semiconductor device manufacturing method and semiconductor device | |
EP3054477A4 (en) | Semiconductor device and method for manufacturing same | |
EP3070751A4 (en) | Semiconductor device and method for manufacturing same |