SG11201601116UA - Method of manufacturing perpendicular mtj device - Google Patents
Method of manufacturing perpendicular mtj deviceInfo
- Publication number
- SG11201601116UA SG11201601116UA SG11201601116UA SG11201601116UA SG11201601116UA SG 11201601116U A SG11201601116U A SG 11201601116UA SG 11201601116U A SG11201601116U A SG 11201601116UA SG 11201601116U A SG11201601116U A SG 11201601116UA SG 11201601116U A SG11201601116U A SG 11201601116UA
- Authority
- SG
- Singapore
- Prior art keywords
- mtj device
- perpendicular mtj
- manufacturing perpendicular
- manufacturing
- mtj
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2015/000446 WO2016125200A1 (en) | 2015-02-02 | 2015-02-02 | Method for manufacturing perpendicular magnetization type mtj element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201601116UA true SG11201601116UA (en) | 2016-09-29 |
Family
ID=55176144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201601116UA SG11201601116UA (en) | 2015-02-02 | 2015-02-02 | Method of manufacturing perpendicular mtj device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9929340B2 (en) |
| JP (1) | JP5848494B1 (en) |
| SG (1) | SG11201601116UA (en) |
| TW (1) | TWI580056B (en) |
| WO (1) | WO2016125200A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201601116UA (en) | 2015-02-02 | 2016-09-29 | Canon Anelva Corp | Method of manufacturing perpendicular mtj device |
| KR101800237B1 (en) | 2015-05-22 | 2017-11-22 | 캐논 아네르바 가부시키가이샤 | Magnetroresistance effect element |
| JP7002134B2 (en) * | 2016-08-29 | 2022-01-25 | 国立大学法人東北大学 | Magnetic tunnel junction element and its manufacturing method |
| CN110178236B (en) * | 2017-01-24 | 2023-09-26 | 国立大学法人东北大学 | Method for manufacturing tunnel magneto-resistance element |
| JP6807246B2 (en) * | 2017-02-23 | 2021-01-06 | 東京エレクトロン株式会社 | Substrate processing equipment and processing system |
| US10388853B2 (en) * | 2017-12-29 | 2019-08-20 | Spin Memory, Inc. | Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers |
| US10916582B2 (en) * | 2017-12-30 | 2021-02-09 | Spin Memory, Inc. | Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ) |
| US20190305213A1 (en) * | 2018-03-30 | 2019-10-03 | Everspin Technologies, Inc. | Magnetoresistive stacks and methods therefor |
| US10468592B1 (en) * | 2018-07-09 | 2019-11-05 | Applied Materials, Inc. | Magnetic tunnel junctions and methods of fabrication thereof |
| US20240102152A1 (en) * | 2020-05-11 | 2024-03-28 | Yun-Chu TSAI | Method of depositing layers of a thin-film transistor on a substrate and sputter deposition apparatus |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235223A (en) * | 2003-01-28 | 2004-08-19 | Anelva Corp | Apparatus and method for manufacturing magnetic multilayer film, and evaluating method and controlling method of film manufacture |
| JP2004319321A (en) * | 2003-04-17 | 2004-11-11 | Sony Corp | Manufacturing device and manufacturing method of organic light-emitting display device |
| JP4476073B2 (en) * | 2004-04-08 | 2010-06-09 | 東北パイオニア株式会社 | Method and apparatus for manufacturing organic EL element |
| JP3770273B2 (en) * | 2004-07-28 | 2006-04-26 | Ｔｄｋ株式会社 | Tunnel magnetoresistive effect element inspection method and apparatus, and tunnel magnetoresistive effect element manufacturing method |
| JP4157542B2 (en) * | 2005-04-27 | 2008-10-01 | Ｔｄｋ株式会社 | Thin-film magnetic head inspection method |
| KR20140037111A (en) * | 2011-05-19 | 2014-03-26 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory(meram) |
| JP5987613B2 (en) | 2012-09-28 | 2016-09-07 | ソニー株式会社 | Storage element, storage device, magnetic head |
| US9036407B2 (en) * | 2012-12-07 | 2015-05-19 | The Regents Of The University Of California | Voltage-controlled magnetic memory element with canted magnetization |
| WO2014097520A1 (en) | 2012-12-20 | 2014-06-26 | キヤノンアネルバ株式会社 | Oxidation treatment device, oxidation method, and method for producing electronic device |
| DE112013006168B4 (en) * | 2012-12-20 | 2023-12-28 | Canon Anelva Corporation | Method for producing a magnetoresistive element |
| JP6251130B2 (en) * | 2013-06-17 | 2017-12-20 | アイメックＩｍｅｃ | Magnetic memory element |
| JP6077133B2 (en) | 2013-11-18 | 2017-02-08 | キヤノンアネルバ株式会社 | Method for manufacturing magnetoresistive element |
| WO2015121905A1 (en) | 2014-02-14 | 2015-08-20 | キヤノンアネルバ株式会社 | Tunnel magnetoresistive effect element manufacturing method and sputtering apparatus |
| SG11201601116UA (en) | 2015-02-02 | 2016-09-29 | Canon Anelva Corp | Method of manufacturing perpendicular mtj device |
| KR101800237B1 (en) | 2015-05-22 | 2017-11-22 | 캐논 아네르바 가부시키가이샤 | Magnetroresistance effect element |
| US10396274B2 (en) * | 2016-03-08 | 2019-08-27 | Tohoku University | Spin electronics element and method of manufacturing thereof |
-
2015
- 2015-02-02 SG SG11201601116UA patent/SG11201601116UA/en unknown
- 2015-02-02 WO PCT/JP2015/000446 patent/WO2016125200A1/en active Application Filing
- 2015-02-02 JP JP2015529725A patent/JP5848494B1/en active Active
- 2015-11-12 TW TW104137332A patent/TWI580056B/en active
-
2017
- 2017-07-19 US US15/653,702 patent/US9929340B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20170317274A1 (en) | 2017-11-02 |
| JPWO2016125200A1 (en) | 2017-04-27 |
| JP5848494B1 (en) | 2016-01-27 |
| TW201639178A (en) | 2016-11-01 |
| WO2016125200A1 (en) | 2016-08-11 |
| TWI580056B (en) | 2017-04-21 |
| US9929340B2 (en) | 2018-03-27 |
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