SG11201507968YA - Method for manufacturing composite body and composition - Google Patents

Method for manufacturing composite body and composition

Info

Publication number
SG11201507968YA
SG11201507968YA SG11201507968YA SG11201507968YA SG11201507968YA SG 11201507968Y A SG11201507968Y A SG 11201507968YA SG 11201507968Y A SG11201507968Y A SG 11201507968YA SG 11201507968Y A SG11201507968Y A SG 11201507968YA SG 11201507968Y A SG11201507968Y A SG 11201507968YA
Authority
SG
Singapore
Prior art keywords
composition
composite body
manufacturing composite
manufacturing
composite
Prior art date
Application number
SG11201507968YA
Inventor
Yasuhisa Kayaba
Shoko Ono
Hirofumi Tanaka
Tsuneji Suzuki
Shigeru Mio
Kazuo Kohmura
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of SG11201507968YA publication Critical patent/SG11201507968YA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/02Polyamines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02Polyamines
    • C08G73/0206Polyalkylene(poly)amines
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0091Complexes with metal-heteroatom-bonds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329Insulating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
SG11201507968YA 2013-03-27 2014-03-11 Method for manufacturing composite body and composition SG11201507968YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013067452 2013-03-27
JP2013179751 2013-08-30
PCT/JP2014/056340 WO2014156616A1 (en) 2013-03-27 2014-03-11 Method for manufacturing complex, and composition

Publications (1)

Publication Number Publication Date
SG11201507968YA true SG11201507968YA (en) 2015-11-27

Family

ID=51623599

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201507968YA SG11201507968YA (en) 2013-03-27 2014-03-11 Method for manufacturing composite body and composition

Country Status (8)

Country Link
US (1) US10020238B2 (en)
EP (1) EP2978011B1 (en)
JP (1) JP6058788B2 (en)
KR (1) KR101747582B1 (en)
CN (1) CN105051872B (en)
SG (1) SG11201507968YA (en)
TW (1) TWI640560B (en)
WO (1) WO2014156616A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3159917B1 (en) * 2014-08-08 2021-08-04 Mitsui Chemicals, Inc. Seal composition and production method for semiconductor device
JP6438747B2 (en) * 2014-11-27 2018-12-19 三井化学株式会社 Method for producing composite
WO2016098738A1 (en) * 2014-12-17 2016-06-23 三井化学株式会社 Substrate intermediary body, through-hole via electrode substrate, and through-hole via electrode formation method
WO2017086361A1 (en) * 2015-11-16 2017-05-26 三井化学株式会社 Semiconductor film composition, method for manufacturing semiconductor film composition, method for manufacturing semiconductor member, method for manufacturing processing material for semiconductor, and semiconductor device
KR102015404B1 (en) * 2016-12-08 2019-08-28 삼성에스디아이 주식회사 Composition for forming silica layer, method for manufacturing silica layer, and electric device includimg silica layer
CN111936588A (en) * 2018-04-06 2020-11-13 日产化学株式会社 Coating film forming composition and method for manufacturing semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933120B1 (en) 1968-06-21 1974-09-04
JPS62282650A (en) 1986-06-02 1987-12-08 川崎重工業株式会社 Single toggle crusher
JP3403402B2 (en) 1990-01-25 2003-05-06 モービル・オイル・コーポレイション Synthetic porous crystalline material, its synthesis and use
DE4026978A1 (en) 1990-08-25 1992-02-27 Bayer Ag Coated substrates for electro=optical applications, etc.
EP0534304A1 (en) 1991-09-21 1993-03-31 Hoechst Aktiengesellschaft Cycloalkylated polyethylenimines and their use as hypolipemic agents
WO1999055714A1 (en) 1998-04-27 1999-11-04 The University Of Akron Supramolecular structures and process for making the same
JP2001213958A (en) 2000-02-03 2001-08-07 Nippon Shokubai Co Ltd Ethyleneimine polymer and its production method
JP2004146495A (en) * 2002-10-23 2004-05-20 Toppan Printing Co Ltd Built-in chip capacitor for printed wiring board, and element-containing board built therein
JP4549135B2 (en) * 2003-09-24 2010-09-22 株式会社日本触媒 Polyalkyleneimine alkylene oxide copolymer
EP1518882A1 (en) 2003-09-24 2005-03-30 Nippon Shokubai Co., Ltd. Polyalkyleneimine alkylene oxide copolymer
EP2267080A1 (en) 2008-04-02 2010-12-29 Mitsui Chemicals, Inc. Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film
WO2009153834A1 (en) 2008-06-18 2009-12-23 富士通株式会社 Semiconductor device and method for manufacturing the same
WO2010137711A1 (en) 2009-05-29 2010-12-02 三井化学株式会社 Composition for sealing semiconductor, semiconductor device, and process for manufacturing semiconductor device
EP2615635B1 (en) * 2010-09-10 2016-05-25 Mitsui Chemicals, Inc. Semiconductor device production method and rinse
US9042016B2 (en) * 2011-10-12 2015-05-26 Fujifilm Corporation Optical film, method of producing optical film, antireflective film, polarizing plate and image display device
CN104412376B (en) * 2012-07-17 2017-02-08 三井化学株式会社 Semiconductor device and method for manufacturing same, and rinsing fluid

Also Published As

Publication number Publication date
TWI640560B (en) 2018-11-11
TW201439167A (en) 2014-10-16
EP2978011B1 (en) 2018-05-02
US20160049343A1 (en) 2016-02-18
CN105051872A (en) 2015-11-11
WO2014156616A1 (en) 2014-10-02
KR101747582B1 (en) 2017-06-14
KR20150120510A (en) 2015-10-27
US10020238B2 (en) 2018-07-10
JP6058788B2 (en) 2017-01-11
CN105051872B (en) 2018-06-08
EP2978011A1 (en) 2016-01-27
EP2978011A4 (en) 2016-10-19
JPWO2014156616A1 (en) 2017-02-16

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