SG11201506518VA - Process for treating a structure - Google Patents

Process for treating a structure

Info

Publication number
SG11201506518VA
SG11201506518VA SG11201506518VA SG11201506518VA SG11201506518VA SG 11201506518V A SG11201506518V A SG 11201506518VA SG 11201506518V A SG11201506518V A SG 11201506518VA SG 11201506518V A SG11201506518V A SG 11201506518VA SG 11201506518V A SG11201506518V A SG 11201506518VA
Authority
SG
Singapore
Prior art keywords
treating
Prior art date
Application number
SG11201506518VA
Inventor
Oleg Kononchuk
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201506518VA publication Critical patent/SG11201506518VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/126—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of gases chemically reacting with the workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
SG11201506518VA 2013-02-26 2014-02-25 Process for treating a structure SG11201506518VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1300439A FR3002687B1 (en) 2013-02-26 2013-02-26 PROCESS FOR TREATING A STRUCTURE
PCT/FR2014/050397 WO2014131983A1 (en) 2013-02-26 2014-02-25 Process for treating a structure

Publications (1)

Publication Number Publication Date
SG11201506518VA true SG11201506518VA (en) 2015-10-29

Family

ID=48613697

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201705513YA SG10201705513YA (en) 2013-02-26 2014-02-25 Process for treating a structure
SG11201506518VA SG11201506518VA (en) 2013-02-26 2014-02-25 Process for treating a structure

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201705513YA SG10201705513YA (en) 2013-02-26 2014-02-25 Process for treating a structure

Country Status (8)

Country Link
US (1) US9911616B2 (en)
EP (1) EP2962326B1 (en)
JP (1) JP6369761B2 (en)
KR (1) KR102164529B1 (en)
CN (1) CN105027263B (en)
FR (1) FR3002687B1 (en)
SG (2) SG10201705513YA (en)
WO (1) WO2014131983A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180130732A1 (en) * 2016-11-04 2018-05-10 General Electric Company Electronics package having a multi-thickness conductor layer and method of manufacturing thereof
CN113130305B (en) * 2021-03-03 2023-03-24 哈尔滨工业大学 Method for constructing surface microstructure of silicon carbide single crystal

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155935A (en) * 1983-02-25 1984-09-05 Agency Of Ind Science & Technol Forming method of pattern by using plasma
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates
JPS62193243A (en) * 1986-02-20 1987-08-25 Canon Inc Formation of deposit film
US4800173A (en) * 1986-02-20 1989-01-24 Canon Kabushiki Kaisha Process for preparing Si or Ge epitaxial film using fluorine oxidant
JPH0249419A (en) * 1988-08-11 1990-02-19 Sony Corp Epitaxy
JPH0834198B2 (en) * 1990-11-28 1996-03-29 信越半導体株式会社 Method for controlling film thickness of single crystal thin film layer on SOI substrate
JP2734357B2 (en) * 1993-12-27 1998-03-30 日本電気株式会社 Method of manufacturing thin film transistor and method of manufacturing polycrystalline silicon film
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5795493A (en) * 1995-05-01 1998-08-18 Motorola, Inc. Laser assisted plasma chemical etching method
TW350095B (en) * 1995-11-21 1999-01-11 Daido Hoxan Inc Cutting method and apparatus for semiconductor materials
JPH09148306A (en) * 1995-11-21 1997-06-06 Daido Hoxan Inc Method for microprocessing wafer and apparatus using the same
JPH1018042A (en) * 1996-06-28 1998-01-20 Osaka Gas Co Ltd Thin film forming device
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
AU2001254866A1 (en) * 2000-04-14 2001-10-30 S.O.I.Tec Silicon On Insulator Technologies Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s)
US7579654B2 (en) * 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
JP2009135430A (en) * 2007-10-10 2009-06-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US7800081B2 (en) * 2007-11-08 2010-09-21 Applied Materials, Inc. Pulse train annealing method and apparatus
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
EP2253413A1 (en) * 2009-05-15 2010-11-24 National University of Ireland Galway Method for laser ablation
FR2971361B1 (en) * 2011-02-04 2014-05-09 Soitec Silicon On Insulator SEMICONDUCTOR STRUCTURE WITH A SMOOTHED SURFACE AND METHOD OF OBTAINING SUCH A STRUCTURE
US8673741B2 (en) * 2011-06-24 2014-03-18 Electro Scientific Industries, Inc Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer
US8845854B2 (en) * 2012-07-13 2014-09-30 Applied Materials, Inc. Laser, plasma etch, and backside grind process for wafer dicing

Also Published As

Publication number Publication date
WO2014131983A1 (en) 2014-09-04
KR20150122711A (en) 2015-11-02
KR102164529B1 (en) 2020-10-12
EP2962326B1 (en) 2019-01-30
CN105027263B (en) 2017-11-21
JP2016514364A (en) 2016-05-19
FR3002687A1 (en) 2014-08-29
US20160005613A1 (en) 2016-01-07
FR3002687B1 (en) 2015-03-06
US9911616B2 (en) 2018-03-06
JP6369761B2 (en) 2018-08-08
CN105027263A (en) 2015-11-04
EP2962326A1 (en) 2016-01-06
SG10201705513YA (en) 2017-08-30

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