SG11201408541XA - Nano-scale void reduction - Google Patents

Nano-scale void reduction

Info

Publication number
SG11201408541XA
SG11201408541XA SG11201408541XA SG11201408541XA SG11201408541XA SG 11201408541X A SG11201408541X A SG 11201408541XA SG 11201408541X A SG11201408541X A SG 11201408541XA SG 11201408541X A SG11201408541X A SG 11201408541XA SG 11201408541X A SG11201408541X A SG 11201408541XA
Authority
SG
Singapore
Prior art keywords
international
california
pct
inert gas
resist layer
Prior art date
Application number
SG11201408541XA
Inventor
Justin Jia-Jen Hwu
Gennady Gauzner
Thomas Larson Greenberg
Original Assignee
Seagate Technology Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology Llc filed Critical Seagate Technology Llc
Publication of SG11201408541XA publication Critical patent/SG11201408541XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Mobile Radio Communication Systems (AREA)

Abstract

(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau „ (10) International Publication Number (43) International Publication Date ^ WO 2013/192018 A2 27 December 2013 (27.12.2013) WIPO I PCT (51) International Patent Classification: Not classified (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/045747 13 June 2013 (13.06.2013) English (30) Priority Data: 13/527,584 19 June 2012 (19.06.2012) English US (71) Applicant: SEAGATE TECHNOLOGY LLC [US/US]; 10200 S. De Anza Blvd, Cupertino, California 95014 (US). (72) Inventors; and (71) Applicants HWU, Justin : Jia-Jen [US/US]; 4164 Bell Common, Fremont, California 94536 (US). GAUZNER, Gennady [US/US]; 3416 Madonna Dr., San Jose, Califor­ nia 95117 (US). GREENBERG, Thomas Larson [US/US]; 2247 Glen Ave, Berkeley, California 94709 (US). (74) Agents: TISDALE, Eric J. et al.; Tabarrok & Zahrt LLP, Suite 1250, 60 South Market Street, San Jose, California 95113 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — without international search report and to be republished upon receipt of that report (Rule 48.2(g)) (54) Title: NANO-SCALE VOID REDUCTION CJ 00 T-H o CJ OS FIG. 3 T-H o CJ (57) Abstract: Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on substrate greater a than Helium. The method may also include estab - lishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to sup­ press evaporation of the resist layer.
SG11201408541XA 2012-06-19 2013-06-13 Nano-scale void reduction SG11201408541XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/527,584 US20130337176A1 (en) 2012-06-19 2012-06-19 Nano-scale void reduction
PCT/US2013/045747 WO2013192018A2 (en) 2012-06-19 2013-06-13 Nano-scale void reduction

Publications (1)

Publication Number Publication Date
SG11201408541XA true SG11201408541XA (en) 2015-01-29

Family

ID=49756158

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201408541XA SG11201408541XA (en) 2012-06-19 2013-06-13 Nano-scale void reduction

Country Status (5)

Country Link
US (1) US20130337176A1 (en)
JP (1) JP2015521797A (en)
CN (1) CN104684710B (en)
SG (1) SG11201408541XA (en)
WO (1) WO2013192018A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130143002A1 (en) * 2011-12-05 2013-06-06 Seagate Technology Llc Method and system for optical callibration discs

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US20050151283A1 (en) * 2004-01-08 2005-07-14 Bajorek Christopher H. Method and apparatus for making a stamper for patterning CDs and DVDs
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7377764B2 (en) * 2005-06-13 2008-05-27 Asml Netherlands B.V. Imprint lithography
ATE513625T1 (en) * 2006-04-03 2011-07-15 Molecular Imprints Inc LITHOGRAPH PRINTING SYSTEM
WO2009153925A1 (en) * 2008-06-17 2009-12-23 株式会社ニコン Nano-imprint method and apparatus
US20100096764A1 (en) * 2008-10-20 2010-04-22 Molecular Imprints, Inc. Gas Environment for Imprint Lithography
NL2003875A (en) * 2009-02-04 2010-08-05 Asml Netherlands Bv Imprint lithography method and apparatus.
JP5364533B2 (en) * 2009-10-28 2013-12-11 株式会社東芝 Imprint system and imprint method
JP5491931B2 (en) * 2010-03-30 2014-05-14 富士フイルム株式会社 Nanoimprint method and mold manufacturing method
JP2011222647A (en) * 2010-04-07 2011-11-04 Fujifilm Corp Pattern forming method and pattern substrate manufacturing method
US20120025426A1 (en) * 2010-07-30 2012-02-02 Seagate Technology Llc Method and system for thermal imprint lithography

Also Published As

Publication number Publication date
CN104684710B (en) 2017-04-26
CN104684710A (en) 2015-06-03
WO2013192018A2 (en) 2013-12-27
WO2013192018A3 (en) 2014-05-15
WO2013192018A9 (en) 2014-07-03
US20130337176A1 (en) 2013-12-19
JP2015521797A (en) 2015-07-30

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