SG11201407090XA - Positive photosensitive material - Google Patents

Positive photosensitive material

Info

Publication number
SG11201407090XA
SG11201407090XA SG11201407090XA SG11201407090XA SG11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA
Authority
SG
Singapore
Prior art keywords
photosensitive material
positive photosensitive
positive
photosensitive
Prior art date
Application number
SG11201407090XA
Inventor
Weihong Liu
Pinghung Lu
Chunwei Chen
Stephen Meyer
Medhat A Toukhy
Sookme Lai
Original Assignee
Az Electronic Materials Luxembourg S À R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg S À R L filed Critical Az Electronic Materials Luxembourg S À R L
Publication of SG11201407090XA publication Critical patent/SG11201407090XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
SG11201407090XA 2012-06-15 2013-05-13 Positive photosensitive material SG11201407090XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/524,790 US9012126B2 (en) 2012-06-15 2012-06-15 Positive photosensitive material
PCT/EP2013/059771 WO2013185989A1 (en) 2012-06-15 2013-05-13 Positive photosensitive material

Publications (1)

Publication Number Publication Date
SG11201407090XA true SG11201407090XA (en) 2014-11-27

Family

ID=48444373

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407090XA SG11201407090XA (en) 2012-06-15 2013-05-13 Positive photosensitive material

Country Status (8)

Country Link
US (1) US9012126B2 (en)
EP (1) EP2862024B1 (en)
JP (1) JP6157605B2 (en)
KR (1) KR101942137B1 (en)
CN (1) CN104380198B (en)
SG (1) SG11201407090XA (en)
TW (1) TWI569102B (en)
WO (1) WO2013185989A1 (en)

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JP6778989B2 (en) * 2015-03-31 2020-11-04 東京応化工業株式会社 Chemically amplified positive photosensitive resin composition
US20170176856A1 (en) * 2015-12-21 2017-06-22 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working photoresist compositions for laser ablation and use thereof
TWI731961B (en) * 2016-04-19 2021-07-01 德商馬克專利公司 Positive working photosensitive material and method of forming a positive relief image
WO2019054805A1 (en) * 2017-09-15 2019-03-21 주식회사 엘지화학 Chemically amplified photoresist composition, photoresist pattern, and method for generating photoresist pattern
KR102146095B1 (en) 2017-09-15 2020-08-19 주식회사 엘지화학 Photoacid generator and photoresist composition for thick layer comprising the same
KR20240112923A (en) * 2018-09-05 2024-07-19 메르크 파텐트 게엠베하 Positive working photosensitive material
JP7475111B2 (en) 2018-11-14 2024-04-26 東京応化工業株式会社 Method for forming resist pattern, resist composition and method for producing same
TW202124569A (en) * 2019-11-13 2021-07-01 德商馬克專利公司 Positive working photosensitive material
KR20220101662A (en) 2019-11-14 2022-07-19 메르크 파텐트 게엠베하 DNQ-type photoresist composition comprising alkali-soluble acrylic resin
CN118284852A (en) 2021-11-17 2024-07-02 默克专利股份有限公司 Composition and method for improving metal structure fabrication by wet chemical etching

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JP5749631B2 (en) * 2010-12-07 2015-07-15 東京応化工業株式会社 Chemically amplified positive photoresist composition for thick film and method for producing thick film resist pattern
JP6195445B2 (en) * 2012-02-27 2017-09-13 東京応化工業株式会社 POSITIVE PHOTORESIST COMPOSITION, PHOTORESIST LAMINATE, PHOTORESIST PATTERN MANUFACTURING METHOD, AND CONNECTION TERMINAL MANUFACTURING METHOD
US8906594B2 (en) 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist

Also Published As

Publication number Publication date
TW201403240A (en) 2014-01-16
EP2862024B1 (en) 2021-12-01
KR20150032523A (en) 2015-03-26
JP6157605B2 (en) 2017-07-05
CN104380198B (en) 2018-09-21
KR101942137B1 (en) 2019-01-24
US9012126B2 (en) 2015-04-21
CN104380198A (en) 2015-02-25
EP2862024A1 (en) 2015-04-22
WO2013185989A1 (en) 2013-12-19
TWI569102B (en) 2017-02-01
US20130337380A1 (en) 2013-12-19
JP2015526752A (en) 2015-09-10

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