SG11201407090XA - Positive photosensitive material - Google Patents
Positive photosensitive materialInfo
- Publication number
- SG11201407090XA SG11201407090XA SG11201407090XA SG11201407090XA SG11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA SG 11201407090X A SG11201407090X A SG 11201407090XA
- Authority
- SG
- Singapore
- Prior art keywords
- photosensitive material
- positive photosensitive
- positive
- photosensitive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/524,790 US9012126B2 (en) | 2012-06-15 | 2012-06-15 | Positive photosensitive material |
PCT/EP2013/059771 WO2013185989A1 (en) | 2012-06-15 | 2013-05-13 | Positive photosensitive material |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201407090XA true SG11201407090XA (en) | 2014-11-27 |
Family
ID=48444373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201407090XA SG11201407090XA (en) | 2012-06-15 | 2013-05-13 | Positive photosensitive material |
Country Status (8)
Country | Link |
---|---|
US (1) | US9012126B2 (en) |
EP (1) | EP2862024B1 (en) |
JP (1) | JP6157605B2 (en) |
KR (1) | KR101942137B1 (en) |
CN (1) | CN104380198B (en) |
SG (1) | SG11201407090XA (en) |
TW (1) | TWI569102B (en) |
WO (1) | WO2013185989A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
JP6175226B2 (en) * | 2012-09-28 | 2017-08-02 | 富士フイルム株式会社 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition for semiconductor production, and method for producing electronic device |
JP6778989B2 (en) * | 2015-03-31 | 2020-11-04 | 東京応化工業株式会社 | Chemically amplified positive photosensitive resin composition |
US20170176856A1 (en) * | 2015-12-21 | 2017-06-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working photoresist compositions for laser ablation and use thereof |
TWI731961B (en) * | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | Positive working photosensitive material and method of forming a positive relief image |
WO2019054805A1 (en) * | 2017-09-15 | 2019-03-21 | 주식회사 엘지화학 | Chemically amplified photoresist composition, photoresist pattern, and method for generating photoresist pattern |
KR102146095B1 (en) | 2017-09-15 | 2020-08-19 | 주식회사 엘지화학 | Photoacid generator and photoresist composition for thick layer comprising the same |
KR20240112923A (en) * | 2018-09-05 | 2024-07-19 | 메르크 파텐트 게엠베하 | Positive working photosensitive material |
JP7475111B2 (en) | 2018-11-14 | 2024-04-26 | 東京応化工業株式会社 | Method for forming resist pattern, resist composition and method for producing same |
TW202124569A (en) * | 2019-11-13 | 2021-07-01 | 德商馬克專利公司 | Positive working photosensitive material |
KR20220101662A (en) | 2019-11-14 | 2022-07-19 | 메르크 파텐트 게엠베하 | DNQ-type photoresist composition comprising alkali-soluble acrylic resin |
CN118284852A (en) | 2021-11-17 | 2024-07-02 | 默克专利股份有限公司 | Composition and method for improving metal structure fabrication by wet chemical etching |
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JPH0878318A (en) | 1994-09-08 | 1996-03-22 | Japan Synthetic Rubber Co Ltd | Alkali development type photo-resist composition |
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SG85613A1 (en) | 1998-02-06 | 2002-01-15 | Morton Int Inc | Photoimageable compositions having hydrophilic binder polymers and hydrophilic monomers |
US6210846B1 (en) | 1999-08-13 | 2001-04-03 | Advanced Micro Devices, Inc. | Exposure during rework for enhanced resist removal |
EP1150165A1 (en) | 2000-04-25 | 2001-10-31 | JSR Corporation | Radiation sensitive resin composition for forming barrier ribs for an el display element, barrier ribs and el display element |
US20020058198A1 (en) * | 2000-09-08 | 2002-05-16 | Shipley Company, L.L.C. | Fluorinated phenolic polymers and photoresist compositions comprising same |
JP4190167B2 (en) | 2000-09-26 | 2008-12-03 | 富士フイルム株式会社 | Positive resist composition |
KR20040029977A (en) | 2001-05-11 | 2004-04-08 | 쉬플리 캄파니, 엘.엘.씨. | Thick film photoresists and methods for use thereof |
JP3894001B2 (en) | 2001-09-06 | 2007-03-14 | 住友化学株式会社 | Chemically amplified positive resist composition |
JP2003114520A (en) | 2001-10-05 | 2003-04-18 | Fuji Photo Film Co Ltd | Photopolymerizable composition and recording material using the same |
JP2003287890A (en) | 2002-01-23 | 2003-10-10 | Toray Ind Inc | Positive radiation-sensitive composition and method for producing resist pattern using the same |
JP4048791B2 (en) | 2002-02-18 | 2008-02-20 | Jsr株式会社 | Radiation sensitive resin composition |
JP4184813B2 (en) | 2002-02-19 | 2008-11-19 | コダックグラフィックコミュニケーションズ株式会社 | Photosensitive composition, photosensitive lithographic printing plate and method for producing lithographic printing plate using the same |
US20030235775A1 (en) | 2002-06-13 | 2003-12-25 | Munirathna Padmanaban | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds |
US7083892B2 (en) * | 2002-06-28 | 2006-08-01 | Fuji Photo Film Co., Ltd. | Resist composition |
JP3895269B2 (en) | 2002-12-09 | 2007-03-22 | 富士通株式会社 | Resist pattern forming method, semiconductor device, and manufacturing method thereof |
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US20040265733A1 (en) | 2003-06-30 | 2004-12-30 | Houlihan Francis M. | Photoacid generators |
TW589516B (en) * | 2003-07-22 | 2004-06-01 | Ind Tech Res Inst | Positive photo resist with uniform reactivity and patterning process using the same |
JP4384570B2 (en) | 2003-12-01 | 2009-12-16 | 東京応化工業株式会社 | Photoresist composition for thick film and method for forming resist pattern |
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JP5216573B2 (en) * | 2008-03-31 | 2013-06-19 | 富士フイルム株式会社 | Actinic ray or radiation sensitive resin composition and pattern forming method using the same |
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JP2012014021A (en) | 2010-07-01 | 2012-01-19 | Fujifilm Corp | Photosensitive composition, pattern forming material, and photosensitive film, pattern forming method, patterned film, antireflection film, insulating film, optical device and electronic device using the composition |
JP2012012602A (en) | 2010-07-05 | 2012-01-19 | Lg Chem Ltd | Alkali-soluble resin polymer and negative photosensitive resin composition containing the same |
JP5749631B2 (en) * | 2010-12-07 | 2015-07-15 | 東京応化工業株式会社 | Chemically amplified positive photoresist composition for thick film and method for producing thick film resist pattern |
JP6195445B2 (en) * | 2012-02-27 | 2017-09-13 | 東京応化工業株式会社 | POSITIVE PHOTORESIST COMPOSITION, PHOTORESIST LAMINATE, PHOTORESIST PATTERN MANUFACTURING METHOD, AND CONNECTION TERMINAL MANUFACTURING METHOD |
US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
-
2012
- 2012-06-15 US US13/524,790 patent/US9012126B2/en active Active
-
2013
- 2013-05-13 EP EP13722743.5A patent/EP2862024B1/en active Active
- 2013-05-13 SG SG11201407090XA patent/SG11201407090XA/en unknown
- 2013-05-13 JP JP2015516525A patent/JP6157605B2/en active Active
- 2013-05-13 WO PCT/EP2013/059771 patent/WO2013185989A1/en active Application Filing
- 2013-05-13 KR KR1020147031611A patent/KR101942137B1/en active IP Right Grant
- 2013-05-13 CN CN201380029778.9A patent/CN104380198B/en active Active
- 2013-06-14 TW TW102121224A patent/TWI569102B/en active
Also Published As
Publication number | Publication date |
---|---|
TW201403240A (en) | 2014-01-16 |
EP2862024B1 (en) | 2021-12-01 |
KR20150032523A (en) | 2015-03-26 |
JP6157605B2 (en) | 2017-07-05 |
CN104380198B (en) | 2018-09-21 |
KR101942137B1 (en) | 2019-01-24 |
US9012126B2 (en) | 2015-04-21 |
CN104380198A (en) | 2015-02-25 |
EP2862024A1 (en) | 2015-04-22 |
WO2013185989A1 (en) | 2013-12-19 |
TWI569102B (en) | 2017-02-01 |
US20130337380A1 (en) | 2013-12-19 |
JP2015526752A (en) | 2015-09-10 |
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