SG11201406899UA - Narrow source for physical vapor deposition processing - Google Patents

Narrow source for physical vapor deposition processing

Info

Publication number
SG11201406899UA
SG11201406899UA SG11201406899UA SG11201406899UA SG11201406899UA SG 11201406899U A SG11201406899U A SG 11201406899UA SG 11201406899U A SG11201406899U A SG 11201406899UA SG 11201406899U A SG11201406899U A SG 11201406899UA SG 11201406899U A SG11201406899U A SG 11201406899UA
Authority
SG
Singapore
Prior art keywords
vapor deposition
physical vapor
deposition processing
narrow source
narrow
Prior art date
Application number
SG11201406899UA
Inventor
Terry Bluck
Alex Riposan
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Publication of SG11201406899UA publication Critical patent/SG11201406899UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG11201406899UA 2012-04-26 2013-04-26 Narrow source for physical vapor deposition processing SG11201406899UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261639047P 2012-04-26 2012-04-26
PCT/US2013/038531 WO2013163623A1 (en) 2012-04-26 2013-04-26 Narrow source for physical vapor deposition processing

Publications (1)

Publication Number Publication Date
SG11201406899UA true SG11201406899UA (en) 2014-11-27

Family

ID=49476379

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201608877QA SG10201608877QA (en) 2012-04-26 2013-04-26 Narrow source for physical vapor deposition processing
SG11201406899UA SG11201406899UA (en) 2012-04-26 2013-04-26 Narrow source for physical vapor deposition processing

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201608877QA SG10201608877QA (en) 2012-04-26 2013-04-26 Narrow source for physical vapor deposition processing

Country Status (8)

Country Link
US (1) US9892890B2 (en)
EP (1) EP2841619A4 (en)
JP (1) JP2015518090A (en)
KR (1) KR20150048089A (en)
CN (1) CN104583454A (en)
SG (2) SG10201608877QA (en)
TW (1) TWI515320B (en)
WO (1) WO2013163623A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150048089A (en) 2012-04-26 2015-05-06 인테벡, 인코포레이티드 Narrow source for physical vapor deposition processing
US9643368B2 (en) * 2012-08-21 2017-05-09 Guill Tool & Engineering Co., Inc. Microlayer coextrusion of optical end products
JP5950866B2 (en) * 2013-05-15 2016-07-13 株式会社神戸製鋼所 Film forming apparatus and film forming method
CN106460164B (en) * 2014-02-20 2019-02-22 因特瓦克公司 The system and method for double treatment for substrate
TWI644383B (en) * 2016-08-29 2018-12-11 因特瓦克公司 In line fan out system
USD858468S1 (en) * 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD859333S1 (en) * 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198283A (en) * 1978-11-06 1980-04-15 Materials Research Corporation Magnetron sputtering target and cathode assembly
US4209375A (en) * 1979-08-02 1980-06-24 The United States Of America As Represented By The United States Department Of Energy Sputter target
EP0393344A1 (en) * 1989-04-20 1990-10-24 Balzers Aktiengesellschaft Targets supporting device for sputtering sources and procedure for maintaining a target in a support
DE4015388C2 (en) * 1990-05-14 1997-07-17 Leybold Ag Cathode sputtering device
DE4223091C1 (en) * 1992-07-14 1993-07-01 Vtd-Vakuumtechnik Dresden Gmbh, O-8017 Dresden, De Water cooled holder for inserted exchangeable target - comprises housing, cooling plate and axially freely movable metal bellows, vacuum arc discharge vapour deposition appts.
DE4301516C2 (en) * 1993-01-21 2003-02-13 Applied Films Gmbh & Co Kg Target cooling with a tub
US5403458A (en) * 1993-08-05 1995-04-04 Guardian Industries Corp. Sputter-coating target and method of use
US5970384A (en) * 1994-08-11 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Methods of heat treating silicon oxide films by irradiating ultra-violet light
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
DE10213049A1 (en) * 2002-03-22 2003-10-02 Dieter Wurczinger Rotatable tubular cathode
US7513982B2 (en) 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
CN1910304A (en) 2004-02-03 2007-02-07 霍尼韦尔国际公司 Physical vapor deposition target constructions
US20080302656A1 (en) * 2007-06-06 2008-12-11 Jurgen Henrich Vacuum coating installation with transport rollers for the transport of a planar substrate
JP4877156B2 (en) * 2007-08-28 2012-02-15 住友金属鉱山株式会社 Sputtering cathode and film forming method
US8408858B2 (en) * 2007-08-30 2013-04-02 Ascentool International Limited Substrate processing system having improved substrate transport system
KR20150048089A (en) 2012-04-26 2015-05-06 인테벡, 인코포레이티드 Narrow source for physical vapor deposition processing

Also Published As

Publication number Publication date
EP2841619A4 (en) 2015-06-03
KR20150048089A (en) 2015-05-06
JP2015518090A (en) 2015-06-25
SG10201608877QA (en) 2016-12-29
US20130284594A1 (en) 2013-10-31
CN104583454A (en) 2015-04-29
TW201348484A (en) 2013-12-01
TWI515320B (en) 2016-01-01
US9892890B2 (en) 2018-02-13
WO2013163623A1 (en) 2013-10-31
EP2841619A1 (en) 2015-03-04

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