SG11201403124SA - A method for fabricating a semiconductor device - Google Patents
A method for fabricating a semiconductor deviceInfo
- Publication number
- SG11201403124SA SG11201403124SA SG11201403124SA SG11201403124SA SG11201403124SA SG 11201403124S A SG11201403124S A SG 11201403124SA SG 11201403124S A SG11201403124S A SG 11201403124SA SG 11201403124S A SG11201403124S A SG 11201403124SA SG 11201403124S A SG11201403124S A SG 11201403124SA
- Authority
- SG
- Singapore
- Prior art keywords
- fabricating
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1005132A FR2969813B1 (en) | 2010-12-27 | 2010-12-27 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
PCT/EP2011/006348 WO2012089314A2 (en) | 2010-12-27 | 2011-12-15 | A method for fabricating a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201403124SA true SG11201403124SA (en) | 2014-10-30 |
Family
ID=45406655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201403124SA SG11201403124SA (en) | 2010-12-27 | 2011-12-15 | A method for fabricating a semiconductor device |
Country Status (9)
Country | Link |
---|---|
US (1) | US20150014824A1 (en) |
JP (1) | JP2015501084A (en) |
KR (1) | KR20140092889A (en) |
CN (1) | CN104054186A (en) |
DE (1) | DE112011106034T5 (en) |
FR (1) | FR2969813B1 (en) |
SG (1) | SG11201403124SA (en) |
TW (1) | TW201234623A (en) |
WO (1) | WO2012089314A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2969815B1 (en) * | 2010-12-27 | 2013-11-22 | Soitec Silicon On Insulator Tech | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
US10453947B1 (en) * | 2018-06-12 | 2019-10-22 | Vanguard International Semiconductor Corporation | Semiconductor structure and high electron mobility transistor with a substrate having a pit, and methods for fabricating semiconductor structure |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3806771A (en) * | 1969-05-05 | 1974-04-23 | Gen Electric | Smoothly beveled semiconductor device with thick glass passivant |
US4197141A (en) * | 1978-01-31 | 1980-04-08 | Massachusetts Institute Of Technology | Method for passivating imperfections in semiconductor materials |
US4431858A (en) * | 1982-05-12 | 1984-02-14 | University Of Florida | Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby |
JPS6294941A (en) * | 1985-10-21 | 1987-05-01 | Sharp Corp | Compound semiconductor device |
FR2631488B1 (en) * | 1988-05-10 | 1990-07-27 | Thomson Hybrides Microondes | PLANAR-TYPE INTEGRATED MICROWAVE CIRCUIT, COMPRISING AT LEAST ONE MESA COMPONENT, AND MANUFACTURING METHOD THEREOF |
JP2542447B2 (en) * | 1990-04-13 | 1996-10-09 | 三菱電機株式会社 | Solar cell and method of manufacturing the same |
JP3988018B2 (en) | 2001-01-18 | 2007-10-10 | ソニー株式会社 | Crystal film, crystal substrate and semiconductor device |
JP3801091B2 (en) * | 2002-05-09 | 2006-07-26 | 富士電機デバイステクノロジー株式会社 | Silicon carbide semiconductor device and manufacturing method thereof |
JP2007059719A (en) * | 2005-08-25 | 2007-03-08 | Nippon Telegr & Teleph Corp <Ntt> | Nitride semiconductor |
US8236593B2 (en) * | 2007-05-14 | 2012-08-07 | Soitec | Methods for improving the quality of epitaxially-grown semiconductor materials |
GB0806556D0 (en) * | 2008-04-11 | 2008-05-14 | Isis Innovation | Silicon wafers |
JP5617175B2 (en) * | 2008-04-17 | 2014-11-05 | 富士電機株式会社 | Wide band gap semiconductor device and manufacturing method thereof |
US20130008508A1 (en) * | 2010-03-18 | 2013-01-10 | National University Corporation Kyoto Institute Of Technology | Light absorbing material and photoelectric conversion element |
-
2010
- 2010-12-27 FR FR1005132A patent/FR2969813B1/en not_active Expired - Fee Related
-
2011
- 2011-12-15 WO PCT/EP2011/006348 patent/WO2012089314A2/en active Application Filing
- 2011-12-15 DE DE112011106034.3T patent/DE112011106034T5/en not_active Withdrawn
- 2011-12-15 JP JP2014546324A patent/JP2015501084A/en active Pending
- 2011-12-15 US US14/364,900 patent/US20150014824A1/en not_active Abandoned
- 2011-12-15 SG SG11201403124SA patent/SG11201403124SA/en unknown
- 2011-12-15 KR KR1020147015463A patent/KR20140092889A/en not_active Application Discontinuation
- 2011-12-15 CN CN201180075547.2A patent/CN104054186A/en active Pending
- 2011-12-23 TW TW100148382A patent/TW201234623A/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE112011106034T5 (en) | 2014-09-04 |
JP2015501084A (en) | 2015-01-08 |
WO2012089314A3 (en) | 2012-10-18 |
TW201234623A (en) | 2012-08-16 |
CN104054186A (en) | 2014-09-17 |
US20150014824A1 (en) | 2015-01-15 |
KR20140092889A (en) | 2014-07-24 |
FR2969813A1 (en) | 2012-06-29 |
FR2969813B1 (en) | 2013-11-08 |
WO2012089314A2 (en) | 2012-07-05 |
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