SG11201402553UA - Dual zone temperature control of upper electrodes - Google Patents

Dual zone temperature control of upper electrodes

Info

Publication number
SG11201402553UA
SG11201402553UA SG11201402553UA SG11201402553UA SG11201402553UA SG 11201402553U A SG11201402553U A SG 11201402553UA SG 11201402553U A SG11201402553U A SG 11201402553UA SG 11201402553U A SG11201402553U A SG 11201402553UA SG 11201402553U A SG11201402553U A SG 11201402553UA
Authority
SG
Singapore
Prior art keywords
temperature control
upper electrodes
zone temperature
dual zone
dual
Prior art date
Application number
SG11201402553UA
Inventor
Alexei Marakhtanov
Rajinder Dhindsa
Ryan Bise
Lumin Li
Sang Ki Nam
Jim Rogers
Eric Hudson
Gerardo Delgadino
Iii Andrew D Bailey
Mike Kellogg
La Llera Anthony De
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/420,949 external-priority patent/US9263240B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11201402553UA publication Critical patent/SG11201402553UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
SG11201402553UA 2011-11-23 2012-11-16 Dual zone temperature control of upper electrodes SG11201402553UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161563509P 2011-11-23 2011-11-23
US13/420,949 US9263240B2 (en) 2011-11-22 2012-03-15 Dual zone temperature control of upper electrodes
PCT/US2012/065677 WO2013078097A1 (en) 2011-11-23 2012-11-16 Dual zone temperature control of upper electrodes

Publications (1)

Publication Number Publication Date
SG11201402553UA true SG11201402553UA (en) 2014-09-26

Family

ID=48470217

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402553UA SG11201402553UA (en) 2011-11-23 2012-11-16 Dual zone temperature control of upper electrodes

Country Status (4)

Country Link
KR (2) KR102074632B1 (en)
SG (1) SG11201402553UA (en)
TW (1) TWI541383B (en)
WO (1) WO2013078097A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9945033B2 (en) * 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
KR100425445B1 (en) * 2001-04-24 2004-03-30 삼성전자주식회사 Plasma etching chamber and method for manufacturing photomask using the same
US8231799B2 (en) * 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US8375890B2 (en) * 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
US8236133B2 (en) * 2008-05-05 2012-08-07 Applied Materials, Inc. Plasma reactor with center-fed multiple zone gas distribution for improved uniformity of critical dimension bias
US8679288B2 (en) * 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support

Also Published As

Publication number Publication date
TW201337038A (en) 2013-09-16
KR20190031338A (en) 2019-03-25
TWI541383B (en) 2016-07-11
KR102031393B1 (en) 2019-10-11
KR20140092929A (en) 2014-07-24
WO2013078097A1 (en) 2013-05-30
KR102074632B1 (en) 2020-02-06

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