SG11201400494TA - Forming an oxide layer on a flat conductive surface - Google Patents

Forming an oxide layer on a flat conductive surface

Info

Publication number
SG11201400494TA
SG11201400494TA SG11201400494TA SG11201400494TA SG11201400494TA SG 11201400494T A SG11201400494T A SG 11201400494TA SG 11201400494T A SG11201400494T A SG 11201400494TA SG 11201400494T A SG11201400494T A SG 11201400494TA SG 11201400494T A SG11201400494T A SG 11201400494TA
Authority
SG
Singapore
Prior art keywords
forming
oxide layer
conductive surface
flat conductive
flat
Prior art date
Application number
SG11201400494TA
Inventor
Leonid Borisovich Rubin
Alexander Sergeyevich Osipov
Elena Borisovna Neburchilova
Original Assignee
Clear Metals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clear Metals Inc filed Critical Clear Metals Inc
Publication of SG11201400494TA publication Critical patent/SG11201400494TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Automation & Control Theory (AREA)
  • Inorganic Chemistry (AREA)
  • Hybrid Cells (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
SG11201400494TA 2011-09-08 2011-09-08 Forming an oxide layer on a flat conductive surface SG11201400494TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CA2011/001013 WO2013033810A1 (en) 2011-09-08 2011-09-08 Forming an oxide layer on a flat conductive surface

Publications (1)

Publication Number Publication Date
SG11201400494TA true SG11201400494TA (en) 2014-09-26

Family

ID=47831385

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201400494TA SG11201400494TA (en) 2011-09-08 2011-09-08 Forming an oxide layer on a flat conductive surface

Country Status (6)

Country Link
US (1) US20140209471A1 (en)
JP (1) JP2014525517A (en)
CN (1) CN104040698A (en)
CA (1) CA2848103A1 (en)
SG (1) SG11201400494TA (en)
WO (1) WO2013033810A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014134699A1 (en) * 2013-03-06 2014-09-12 Pacific Surf Partners Corp. Forming a transparent metal oxide layer on a conductive surface of a dielectric substrate
ES2529607B1 (en) * 2013-07-23 2015-12-02 Abengoa Solar New Technologies, S.A. Procedure for the preparation of conductive and transparent layers of zinc oxide doped with aluminum
GB2535805A (en) 2015-02-27 2016-08-31 Biomet Uk Healthcare Ltd Apparatus and method for selectively treating a surface of a component
US10443146B2 (en) * 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US20210363654A1 (en) * 2018-06-22 2021-11-25 Hewlett-Packard Development Company, L.P. Nickel-free sealing of anodized metal substrates
US20220186396A1 (en) * 2020-12-11 2022-06-16 Metaly S.R.L. Equipment for oxidation of planar metallic surfaces, such as sheet, fabric or metal net and method of application of the treatment

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5288552A (en) * 1976-01-20 1977-07-25 Matsushita Electric Ind Co Ltd Anodizing apparatus
NL189310C (en) * 1984-05-18 1993-03-01 Toyo Kohan Co Ltd COATED STEEL SHEET WITH IMPROVED WELDABILITY AND METHOD FOR MANUFACTURING.
US4578156A (en) * 1984-12-10 1986-03-25 American Hoechst Corporation Electrolytes for electrochemically treating metal plates
US5007990A (en) * 1987-07-10 1991-04-16 Shipley Company Inc. Electroplating process
US5110755A (en) * 1990-01-04 1992-05-05 Westinghouse Electric Corp. Process for forming a component insulator on a silicon substrate
US5254232A (en) * 1992-02-07 1993-10-19 Massachusetts Institute Of Technology Apparatus for the electrolytic production of metals
JPH06336695A (en) * 1993-05-31 1994-12-06 Sigma Merutetsuku Kk Method for finishing anodic oxidation and anodic oxidation device
GB2321646B (en) * 1997-02-04 2001-10-17 Christopher Robert Eccles Improvements in or relating to electrodes
US5980723A (en) * 1997-08-27 1999-11-09 Jude Runge-Marchese Electrochemical deposition of a composite polymer metal oxide
SE0001368L (en) * 2000-04-13 2001-10-14 Obducat Ab Apparatus and method for electrochemical processing of substrates
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
JP2004043904A (en) * 2002-07-12 2004-02-12 Fujikura Ltd Method of producing semiconductor device and semiconductor equipment
JP4011522B2 (en) * 2003-06-17 2007-11-21 東京エレクトロン株式会社 Anodizing device, method for producing oxide layer, field emission electron source, method for producing field emission electron source
US20050103639A1 (en) * 2003-11-18 2005-05-19 Fu-Hsing Lu Titanium dioxide film synthesizing method and the product thereof
JP3881687B1 (en) * 2005-08-05 2007-02-14 新光電気工業株式会社 Plating metal filling method and plating metal filling device
US7842173B2 (en) * 2007-01-29 2010-11-30 Semitool, Inc. Apparatus and methods for electrochemical processing of microfeature wafers
CN101250739A (en) * 2007-11-29 2008-08-27 苏州市万泰真空炉研究所有限公司 Micro-arc oxidation treatment of magnesium alloy
EP2260123A1 (en) * 2008-02-28 2010-12-15 Corning Incorporated Electrochemical methods of making nanostructures
CA2700769A1 (en) * 2010-04-16 2011-10-16 Nunzio Consiglio Radiant heating tile system

Also Published As

Publication number Publication date
US20140209471A1 (en) 2014-07-31
CN104040698A (en) 2014-09-10
JP2014525517A (en) 2014-09-29
WO2013033810A1 (en) 2013-03-14
CA2848103A1 (en) 2013-03-14

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