SG10202012382RA - Methods for polymer coefficient of thermal expansion (cte) tuning by microwave curing - Google Patents

Methods for polymer coefficient of thermal expansion (cte) tuning by microwave curing

Info

Publication number
SG10202012382RA
SG10202012382RA SG10202012382RA SG10202012382RA SG10202012382RA SG 10202012382R A SG10202012382R A SG 10202012382RA SG 10202012382R A SG10202012382R A SG 10202012382RA SG 10202012382R A SG10202012382R A SG 10202012382RA SG 10202012382R A SG10202012382R A SG 10202012382RA
Authority
SG
Singapore
Prior art keywords
cte
tuning
methods
thermal expansion
microwave curing
Prior art date
Application number
SG10202012382RA
Other languages
English (en)
Inventor
Yueh Sheng Ow
Rui Wang
Tuck Foong Koh
Xin Wang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10202012382RA publication Critical patent/SG10202012382RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/6447—Method of operation or details of the microwave heating apparatus related to the use of detectors or sensors
    • H05B6/645—Method of operation or details of the microwave heating apparatus related to the use of detectors or sensors using temperature sensors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/66—Circuits
    • H05B6/68—Circuits for monitoring or control
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/705—Feed lines using microwave tuning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Polyurethanes Or Polyureas (AREA)
SG10202012382RA 2016-06-19 2017-06-06 Methods for polymer coefficient of thermal expansion (cte) tuning by microwave curing SG10202012382RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662352005P 2016-06-19 2016-06-19
US15/451,603 US20170365490A1 (en) 2016-06-19 2017-03-07 Methods for polymer coefficient of thermal expansion (cte) tuning by microwave curing

Publications (1)

Publication Number Publication Date
SG10202012382RA true SG10202012382RA (en) 2021-01-28

Family

ID=60660825

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10202012382RA SG10202012382RA (en) 2016-06-19 2017-06-06 Methods for polymer coefficient of thermal expansion (cte) tuning by microwave curing
SG11201811297YA SG11201811297YA (en) 2016-06-19 2017-06-06 Methods for polymer coefficient of thermal expansion (cte) tuning by microwave curing

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201811297YA SG11201811297YA (en) 2016-06-19 2017-06-06 Methods for polymer coefficient of thermal expansion (cte) tuning by microwave curing

Country Status (6)

Country Link
US (1) US20170365490A1 (zh)
KR (1) KR102232794B1 (zh)
CN (1) CN109314060B (zh)
SG (2) SG10202012382RA (zh)
TW (1) TWI751173B (zh)
WO (1) WO2017222800A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160086960A1 (en) * 2014-09-22 2016-03-24 Texas Instruments Incorporated Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance
US20200206775A1 (en) * 2018-12-26 2020-07-02 Applied Materials, Inc. Methods for forming microwave tunable composited thin-film dielectric layer
KR20220034148A (ko) * 2019-07-07 2022-03-17 어플라이드 머티어리얼스, 인코포레이티드 폴리머 재료들의 마이크로파 프로세싱을 위한 방법들 및 장치
CN115179469B (zh) * 2022-07-21 2023-06-23 江苏邑文微电子科技有限公司 一种应用于半导体器件的聚酰亚胺烘箱固化工艺转化方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241040A (en) * 1990-07-11 1993-08-31 International Business Machines Corporation Microwave processing
US5798395A (en) * 1994-03-31 1998-08-25 Lambda Technologies Inc. Adhesive bonding using variable frequency microwave energy
US5738915A (en) * 1996-09-19 1998-04-14 Lambda Technologies, Inc. Curing polymer layers on semiconductor substrates using variable frequency microwave energy
US7638727B2 (en) * 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7557035B1 (en) * 2004-04-06 2009-07-07 Advanced Micro Devices, Inc. Method of forming semiconductor devices by microwave curing of low-k dielectric films
DE102007017641A1 (de) * 2007-04-13 2008-10-16 Infineon Technologies Ag Aushärtung von Schichten am Halbleitermodul mittels elektromagnetischer Felder
US8846448B2 (en) * 2012-08-10 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Warpage control in a package-on-package structure
KR102132427B1 (ko) * 2012-09-07 2020-07-09 어플라이드 머티어리얼스, 인코포레이티드 멀티-챔버 진공 시스템 확인 내에서의 다공성 유전체, 폴리머-코팅된 기판들 및 에폭시의 통합 프로세싱
US10224258B2 (en) * 2013-03-22 2019-03-05 Applied Materials, Inc. Method of curing thermoplastics with microwave energy
US9538586B2 (en) * 2013-04-26 2017-01-03 Applied Materials, Inc. Method and apparatus for microwave treatment of dielectric films
WO2015026445A1 (en) * 2013-08-21 2015-02-26 Applied Materials, Inc. Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications
US9159547B2 (en) * 2013-09-17 2015-10-13 Deca Technologies Inc. Two step method of rapid curing a semiconductor polymer layer
US20160086960A1 (en) * 2014-09-22 2016-03-24 Texas Instruments Incorporated Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance

Also Published As

Publication number Publication date
CN109314060A (zh) 2019-02-05
KR20190009839A (ko) 2019-01-29
WO2017222800A1 (en) 2017-12-28
TW201808647A (zh) 2018-03-16
CN109314060B (zh) 2023-08-25
TWI751173B (zh) 2022-01-01
US20170365490A1 (en) 2017-12-21
SG11201811297YA (en) 2019-01-30
KR102232794B1 (ko) 2021-03-25

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