SG10202003724VA - Gas supply system for an ion implanter - Google Patents

Gas supply system for an ion implanter

Info

Publication number
SG10202003724VA
SG10202003724VA SG10202003724VA SG10202003724VA SG10202003724VA SG 10202003724V A SG10202003724V A SG 10202003724VA SG 10202003724V A SG10202003724V A SG 10202003724VA SG 10202003724V A SG10202003724V A SG 10202003724VA SG 10202003724V A SG10202003724V A SG 10202003724VA
Authority
SG
Singapore
Prior art keywords
gas supply
supply system
ion implanter
implanter
ion
Prior art date
Application number
SG10202003724VA
Inventor
Chun-Neng Nien
Original Assignee
Ion Square International Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Square International Company Ltd filed Critical Ion Square International Company Ltd
Publication of SG10202003724VA publication Critical patent/SG10202003724VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17DPIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00Pipe-line systems
    • F17D1/02Pipe-line systems for gases or vapours
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17DPIPE-LINE SYSTEMS; PIPE-LINES
    • F17D3/00Arrangements for supervising or controlling working operations
    • F17D3/01Arrangements for supervising or controlling working operations for controlling, signalling, or supervising the conveyance of a product
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/061Construction
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/45Hydrogen technologies in production processes
SG10202003724VA 2019-04-25 2020-04-23 Gas supply system for an ion implanter SG10202003724VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW108114415A TWI693656B (en) 2019-04-25 2019-04-25 Gas supply system for an ion implanter

Publications (1)

Publication Number Publication Date
SG10202003724VA true SG10202003724VA (en) 2020-11-27

Family

ID=71896156

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202003724VA SG10202003724VA (en) 2019-04-25 2020-04-23 Gas supply system for an ion implanter

Country Status (4)

Country Link
KR (1) KR20200125904A (en)
CN (1) CN111863657A (en)
SG (1) SG10202003724VA (en)
TW (1) TWI693656B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI729801B (en) * 2020-05-08 2021-06-01 晨碩國際有限公司 Gas transmission adapting device of remote doping gas supply system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
JP2765622B2 (en) * 1995-08-23 1998-06-18 日本電気株式会社 Method for growing selective silicon epitaxial film
JP3533916B2 (en) * 1997-11-26 2004-06-07 日新電機株式会社 Ion beam irradiation equipment
EP2426693A3 (en) * 1999-12-13 2013-01-16 Semequip, Inc. Ion source
EP1695038B1 (en) * 2003-12-12 2013-02-13 Semequip, Inc. Controlling the flow of vapors sublimated from solids
JP4695911B2 (en) * 2005-03-31 2011-06-08 株式会社Sen Insulating piping member, gas supply device, and ion beam device
US20070157804A1 (en) * 2006-01-06 2007-07-12 Mcmanus James V Method and apparatus for decommissioning and recycling retired adsorbent-based fluid storage and dispensing vessels
US8603252B2 (en) * 2006-04-26 2013-12-10 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
WO2008058049A2 (en) * 2006-11-06 2008-05-15 Semequip, Inc. Ion implantation device and method of semiconductor manufacturing by the implantation of molecular ions containing phosphorus and arsenic
US20130251913A1 (en) * 2010-11-30 2013-09-26 Advanced Technology Materials, Inc. Ion implanter system including remote dopant source, and method comprising same
US9212785B2 (en) * 2012-10-11 2015-12-15 Varian Semiconductor Equipment Associates, Inc. Passive isolation assembly and gas transport system
JP6238689B2 (en) * 2013-11-13 2017-11-29 住友重機械イオンテクノロジー株式会社 Ion generating apparatus and ion generating method
US10269537B2 (en) * 2013-12-16 2019-04-23 Varian Semiconductor Equipment Associates, Inc. Vacuum assembly for an ion implanter system
KR101929696B1 (en) * 2014-10-30 2018-12-14 엔테그리스, 아이엔씨. Ion implanter comprising integrated ventilation system

Also Published As

Publication number Publication date
TW202040717A (en) 2020-11-01
TWI693656B (en) 2020-05-11
CN111863657A (en) 2020-10-30
KR20200125904A (en) 2020-11-05

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