SG10202001231UA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10202001231UA
SG10202001231UA SG10202001231UA SG10202001231UA SG10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10202001231UA
Inventor
Harada Shigenori
Matsuzawa Minoru
Kiuchi Hayato
Yodo Yoshiaki
Arakawa Taro
Agari Masamitsu
Kawamura Emiko
Fujii Yusuke
Miyai Toshiki
Ohmae Makiko
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10202001231UA publication Critical patent/SG10202001231UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • C08L67/02Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Polymers & Plastics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10202001231UA 2019-03-05 2020-02-11 Wafer processing method SG10202001231UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019039514A JP7277019B2 (en) 2019-03-05 2019-03-05 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10202001231UA true SG10202001231UA (en) 2020-10-29

Family

ID=72146810

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202001231UA SG10202001231UA (en) 2019-03-05 2020-02-11 Wafer processing method

Country Status (8)

Country Link
US (1) US11049772B2 (en)
JP (1) JP7277019B2 (en)
KR (1) KR20200106845A (en)
CN (1) CN111668160A (en)
DE (1) DE102020202836B4 (en)
MY (1) MY195567A (en)
SG (1) SG10202001231UA (en)
TW (1) TWI812847B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7430515B2 (en) * 2019-11-06 2024-02-13 株式会社ディスコ Wafer processing method

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3076179B2 (en) 1993-07-26 2000-08-14 株式会社ディスコ Dicing equipment
JP3076179U (en) 2000-09-07 2001-03-30 和雄 落合 Cup type bottle cap
JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
JP2003152056A (en) 2001-11-08 2003-05-23 Sony Corp Semiconductor element holder and method of manufacturing the same
TWI310230B (en) * 2003-01-22 2009-05-21 Lintec Corp Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work
JP4647228B2 (en) * 2004-04-01 2011-03-09 株式会社ディスコ Wafer processing method
JP4930679B2 (en) 2005-12-14 2012-05-16 日本ゼオン株式会社 Manufacturing method of semiconductor device
FI20060256L (en) * 2006-03-17 2006-03-20 Imbera Electronics Oy Circuit board manufacturing and the circuit board containing the component
WO2007148724A1 (en) 2006-06-23 2007-12-27 Hitachi Chemical Company, Ltd. Production method of semiconductor device and bonding film
JP2008117943A (en) * 2006-11-06 2008-05-22 Nitto Denko Corp Adhesive sheet for water jet laser dicing
JP5551387B2 (en) 2009-07-03 2014-07-16 リンテック株式会社 Sheet sticking device and sticking method
US8507359B2 (en) * 2009-12-02 2013-08-13 Sharp Kabushiki Kaisha Semiconductor device, process for producing same, and display device
US9559004B2 (en) * 2011-05-12 2017-01-31 STATS ChipPAC Pte. Ltd. Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy
CN108155142B (en) * 2011-09-30 2022-05-03 琳得科株式会社 Dicing film having protective film forming layer and method for manufacturing chip
JP6295132B2 (en) 2014-04-24 2018-03-14 日東電工株式会社 Dicing die bond film
JP6425435B2 (en) * 2014-07-01 2018-11-21 株式会社ディスコ Tip spacing maintenance device
JP5862733B1 (en) * 2014-09-08 2016-02-16 富士ゼロックス株式会社 Manufacturing method of semiconductor piece
US20160146995A1 (en) * 2014-11-26 2016-05-26 Sumitomo Chemical Company, Limited Optical film
TWI679691B (en) * 2016-11-30 2019-12-11 美商帕斯馬舍門有限責任公司 Method and apparatus for plasma dicing a semi-conductor wafer
CN109699189B (en) * 2017-02-24 2024-01-30 古河电气工业株式会社 Mask-integrated surface protective tape and method for manufacturing semiconductor chip using the same
JP2019192717A (en) 2018-04-20 2019-10-31 株式会社ディスコ Method of processing wafer
JP7154809B2 (en) 2018-04-20 2022-10-18 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
DE102020202836A1 (en) 2020-09-10
DE102020202836B4 (en) 2024-10-17
TW202109758A (en) 2021-03-01
CN111668160A (en) 2020-09-15
KR20200106845A (en) 2020-09-15
JP2020145261A (en) 2020-09-10
TWI812847B (en) 2023-08-21
US11049772B2 (en) 2021-06-29
US20200286785A1 (en) 2020-09-10
JP7277019B2 (en) 2023-05-18
MY195567A (en) 2023-02-02

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