SG10202001231UA - Wafer processing method - Google Patents
Wafer processing methodInfo
- Publication number
- SG10202001231UA SG10202001231UA SG10202001231UA SG10202001231UA SG10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA SG 10202001231U A SG10202001231U A SG 10202001231UA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- wafer processing
- wafer
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
- C08L67/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Polymers & Plastics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019039514A JP7277019B2 (en) | 2019-03-05 | 2019-03-05 | Wafer processing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202001231UA true SG10202001231UA (en) | 2020-10-29 |
Family
ID=72146810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202001231UA SG10202001231UA (en) | 2019-03-05 | 2020-02-11 | Wafer processing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US11049772B2 (en) |
JP (1) | JP7277019B2 (en) |
KR (1) | KR20200106845A (en) |
CN (1) | CN111668160A (en) |
DE (1) | DE102020202836B4 (en) |
MY (1) | MY195567A (en) |
SG (1) | SG10202001231UA (en) |
TW (1) | TWI812847B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7430515B2 (en) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | Wafer processing method |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3076179B2 (en) | 1993-07-26 | 2000-08-14 | 株式会社ディスコ | Dicing equipment |
JP3076179U (en) | 2000-09-07 | 2001-03-30 | 和雄 落合 | Cup type bottle cap |
JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
JP2003152056A (en) | 2001-11-08 | 2003-05-23 | Sony Corp | Semiconductor element holder and method of manufacturing the same |
TWI310230B (en) * | 2003-01-22 | 2009-05-21 | Lintec Corp | Adhesive sheet, method for protecting surface of semiconductor wafer and method for processing work |
JP4647228B2 (en) * | 2004-04-01 | 2011-03-09 | 株式会社ディスコ | Wafer processing method |
JP4930679B2 (en) | 2005-12-14 | 2012-05-16 | 日本ゼオン株式会社 | Manufacturing method of semiconductor device |
FI20060256L (en) * | 2006-03-17 | 2006-03-20 | Imbera Electronics Oy | Circuit board manufacturing and the circuit board containing the component |
WO2007148724A1 (en) | 2006-06-23 | 2007-12-27 | Hitachi Chemical Company, Ltd. | Production method of semiconductor device and bonding film |
JP2008117943A (en) * | 2006-11-06 | 2008-05-22 | Nitto Denko Corp | Adhesive sheet for water jet laser dicing |
JP5551387B2 (en) | 2009-07-03 | 2014-07-16 | リンテック株式会社 | Sheet sticking device and sticking method |
US8507359B2 (en) * | 2009-12-02 | 2013-08-13 | Sharp Kabushiki Kaisha | Semiconductor device, process for producing same, and display device |
US9559004B2 (en) * | 2011-05-12 | 2017-01-31 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy |
CN108155142B (en) * | 2011-09-30 | 2022-05-03 | 琳得科株式会社 | Dicing film having protective film forming layer and method for manufacturing chip |
JP6295132B2 (en) | 2014-04-24 | 2018-03-14 | 日東電工株式会社 | Dicing die bond film |
JP6425435B2 (en) * | 2014-07-01 | 2018-11-21 | 株式会社ディスコ | Tip spacing maintenance device |
JP5862733B1 (en) * | 2014-09-08 | 2016-02-16 | 富士ゼロックス株式会社 | Manufacturing method of semiconductor piece |
US20160146995A1 (en) * | 2014-11-26 | 2016-05-26 | Sumitomo Chemical Company, Limited | Optical film |
TWI679691B (en) * | 2016-11-30 | 2019-12-11 | 美商帕斯馬舍門有限責任公司 | Method and apparatus for plasma dicing a semi-conductor wafer |
CN109699189B (en) * | 2017-02-24 | 2024-01-30 | 古河电气工业株式会社 | Mask-integrated surface protective tape and method for manufacturing semiconductor chip using the same |
JP2019192717A (en) | 2018-04-20 | 2019-10-31 | 株式会社ディスコ | Method of processing wafer |
JP7154809B2 (en) | 2018-04-20 | 2022-10-18 | 株式会社ディスコ | Wafer processing method |
-
2019
- 2019-03-05 JP JP2019039514A patent/JP7277019B2/en active Active
-
2020
- 2020-02-11 MY MYPI2020000737A patent/MY195567A/en unknown
- 2020-02-11 SG SG10202001231UA patent/SG10202001231UA/en unknown
- 2020-02-24 US US16/799,291 patent/US11049772B2/en active Active
- 2020-02-27 TW TW109106561A patent/TWI812847B/en active
- 2020-03-03 KR KR1020200026407A patent/KR20200106845A/en active Search and Examination
- 2020-03-03 CN CN202010138245.6A patent/CN111668160A/en active Pending
- 2020-03-05 DE DE102020202836.2A patent/DE102020202836B4/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102020202836A1 (en) | 2020-09-10 |
DE102020202836B4 (en) | 2024-10-17 |
TW202109758A (en) | 2021-03-01 |
CN111668160A (en) | 2020-09-15 |
KR20200106845A (en) | 2020-09-15 |
JP2020145261A (en) | 2020-09-10 |
TWI812847B (en) | 2023-08-21 |
US11049772B2 (en) | 2021-06-29 |
US20200286785A1 (en) | 2020-09-10 |
JP7277019B2 (en) | 2023-05-18 |
MY195567A (en) | 2023-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201905294RA (en) | Wafer processing method | |
SG10201904699RA (en) | Wafer processing method | |
SG10202000576QA (en) | Wafer processing method | |
SG10202006736YA (en) | Wafer processing method | |
SG10201905935VA (en) | Wafer processing method | |
SG10202004876YA (en) | Wafer processing method | |
SG10201912832SA (en) | Wafer processing method | |
SG10201911116YA (en) | Wafer processing method | |
SG10201909522RA (en) | Wafer processing method | |
SG10201906678TA (en) | Wafer processing method | |
SG10201905936RA (en) | Wafer processing method | |
SG10201904719TA (en) | Wafer processing method | |
SG10202009952SA (en) | Wafer processing method | |
SG10202003482RA (en) | Wafer processing method | |
SG10202002647RA (en) | Wafer processing method | |
SG10202000574XA (en) | Wafer processing method | |
SG10201910165QA (en) | Wafer processing method | |
SG10201910032WA (en) | Wafer processing method | |
SG10201906897SA (en) | Wafer processing method | |
SG10201906896QA (en) | Wafer processing method | |
SG10201904710UA (en) | Wafer processing method | |
SG10202010592VA (en) | Wafer processing method | |
SG10202009948YA (en) | Wafer processing method | |
SG10202009949PA (en) | Wafer processing method | |
SG10202009268SA (en) | Wafer processing method |