SG10201913392TA - Multi-layer piezoelectric substrate with grounding structure - Google Patents

Multi-layer piezoelectric substrate with grounding structure

Info

Publication number
SG10201913392TA
SG10201913392TA SG10201913392TA SG10201913392TA SG10201913392TA SG 10201913392T A SG10201913392T A SG 10201913392TA SG 10201913392T A SG10201913392T A SG 10201913392TA SG 10201913392T A SG10201913392T A SG 10201913392TA SG 10201913392T A SG10201913392T A SG 10201913392TA
Authority
SG
Singapore
Prior art keywords
piezoelectric substrate
layer piezoelectric
grounding structure
grounding
layer
Prior art date
Application number
SG10201913392TA
Inventor
Rei Goto
Keiichi Maki
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG10201913392TA publication Critical patent/SG10201913392TA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02913—Measures for shielding against electromagnetic fields
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6406—Filters characterised by a particular frequency characteristic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
SG10201913392TA 2018-12-26 2019-12-26 Multi-layer piezoelectric substrate with grounding structure SG10201913392TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201862785011P 2018-12-26 2018-12-26

Publications (1)

Publication Number Publication Date
SG10201913392TA true SG10201913392TA (en) 2020-07-29

Family

ID=71122170

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201913392TA SG10201913392TA (en) 2018-12-26 2019-12-26 Multi-layer piezoelectric substrate with grounding structure

Country Status (3)

Country Link
US (3) US11671072B2 (en)
JP (1) JP7527779B2 (en)
SG (1) SG10201913392TA (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018125498B4 (en) * 2018-10-15 2020-04-23 RF360 Europe GmbH Electroacoustic RF filter with improved performance and multiplexer component that includes an RF filter
US11671072B2 (en) 2018-12-26 2023-06-06 Skyworks Solutions, Inc. Multi-layer piezoelectric substrate with conductive layer
US12081189B2 (en) 2019-11-21 2024-09-03 Skyworks Solutions, Inc. Packaged bulk acoustic wave resonator on acoustic wave device
US20230016884A1 (en) * 2021-07-15 2023-01-19 Skyworks Solutions, Inc. Multilayer piezoelectric substrate device with partially recessed passivation layer
US20230062981A1 (en) * 2021-08-27 2023-03-02 Skyworks Solutions, Inc. Packaged multilayer piezoelectric surface acoustic wave device with conductive pillar
CN118157617B (en) * 2024-05-09 2024-08-20 苏州科阳半导体有限公司 Wafer packaging structure and method thereof, filter packaging method and filter structure
CN118157618B (en) * 2024-05-09 2024-08-23 苏州科阳半导体有限公司 Wafer packaging structure and method thereof, filter packaging method and filter structure

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JP3163606B2 (en) 1993-01-29 2001-05-08 住友電気工業株式会社 Surface acoustic wave device
JPH07226607A (en) 1994-02-10 1995-08-22 Hitachi Ltd Branching filter, branching filter module and radio communication equipment
JP3306272B2 (en) 1995-10-20 2002-07-24 富士通株式会社 Surface acoustic wave device
JP2000049564A (en) 1998-05-29 2000-02-18 Kyocera Corp Surface acoustic wave device
JP4601415B2 (en) 2004-12-24 2010-12-22 京セラ株式会社 Surface acoustic wave device and communication device
JP2006211613A (en) 2005-01-31 2006-08-10 Sony Corp Saw device, communication module and manufacturing method of saw device
DE102005032058B4 (en) 2005-07-08 2016-12-29 Epcos Ag HF filter with improved backbone suppression
EP2056456B1 (en) * 2006-10-12 2013-03-13 Murata Manufacturing Co. Ltd. Elastic boundary-wave device
JP4781969B2 (en) 2006-10-31 2011-09-28 京セラ株式会社 Circuit board for duplexer device, duplexer, and communication apparatus
FI124732B (en) * 2011-11-11 2014-12-31 Teknologian Tutkimuskeskus Vtt Lateral connected bulk wave filter with improved passband characteristics
US9093979B2 (en) * 2012-06-05 2015-07-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Laterally-coupled acoustic resonators
JP6427075B2 (en) 2015-07-08 2018-11-21 太陽誘電株式会社 Elastic wave device, duplexer, and module
US10812038B2 (en) 2015-08-25 2020-10-20 Avago Technologies International Sales Pte. Limited Acoustic wave resonator
US10938367B2 (en) 2016-03-31 2021-03-02 Qorvo Us, Inc. Solidly mounted layer thin film device with grounding layer
JP6748010B2 (en) 2017-03-21 2020-08-26 太陽誘電株式会社 Method of manufacturing acoustic wave device
WO2018235433A1 (en) 2017-06-21 2018-12-27 株式会社村田製作所 Acoustic wave device
US11671072B2 (en) 2018-12-26 2023-06-06 Skyworks Solutions, Inc. Multi-layer piezoelectric substrate with conductive layer

Also Published As

Publication number Publication date
JP7527779B2 (en) 2024-08-05
US20200212875A1 (en) 2020-07-02
US11671072B2 (en) 2023-06-06
US20230370044A1 (en) 2023-11-16
US11677377B2 (en) 2023-06-13
US20200212883A1 (en) 2020-07-02
JP2020108145A (en) 2020-07-09

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