SG10201907743RA - Multilayer piezoelectric substrate - Google Patents

Multilayer piezoelectric substrate

Info

Publication number
SG10201907743RA
SG10201907743RA SG10201907743RA SG10201907743RA SG10201907743RA SG 10201907743R A SG10201907743R A SG 10201907743RA SG 10201907743R A SG10201907743R A SG 10201907743RA SG 10201907743R A SG10201907743R A SG 10201907743RA SG 10201907743R A SG10201907743R A SG 10201907743RA
Authority
SG
Singapore
Prior art keywords
piezoelectric substrate
multilayer piezoelectric
multilayer
substrate
piezoelectric
Prior art date
Application number
SG10201907743RA
Inventor
Maki Keiichi
Goto Rei
Fukuhara Hironori
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG10201907743RA publication Critical patent/SG10201907743RA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/0004—Impedance-matching networks
    • H03H9/0009—Impedance-matching networks using surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H03H9/02622—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the surface, including back surface
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/08—Holders with means for regulating temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14502—Surface acoustic wave [SAW] transducers for a particular purpose
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14544—Transducers of particular shape or position
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
SG10201907743RA 2018-08-22 2019-08-22 Multilayer piezoelectric substrate SG10201907743RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862721208P 2018-08-22 2018-08-22
US201962836134P 2019-04-19 2019-04-19

Publications (1)

Publication Number Publication Date
SG10201907743RA true SG10201907743RA (en) 2020-03-30

Family

ID=68108913

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201907743RA SG10201907743RA (en) 2018-08-22 2019-08-22 Multilayer piezoelectric substrate

Country Status (8)

Country Link
US (1) US11133789B2 (en)
JP (1) JP7374658B2 (en)
KR (1) KR20200022357A (en)
CN (1) CN110858763A (en)
DE (1) DE102019212548A1 (en)
GB (2) GB2608902B (en)
SG (1) SG10201907743RA (en)
TW (1) TWI811431B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019217000A1 (en) * 2018-11-06 2020-05-07 Skyworks Solutions, Inc. ACOUSTIC SHAFT DEVICE WITH LAYER OF HIGH THERMAL CONDUCTIVITY ON INTERDIGITAL CONVERTER
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
US20230016884A1 (en) * 2021-07-15 2023-01-19 Skyworks Solutions, Inc. Multilayer piezoelectric substrate device with partially recessed passivation layer
US20230107728A1 (en) * 2021-10-04 2023-04-06 Skyworks Solutions, Inc. Stacked acoustic wave device assembly
CN114039573A (en) * 2022-01-07 2022-02-11 深圳新声半导体有限公司 Surface acoustic wave resonator, surface acoustic wave filter, manufacturing method of surface acoustic wave resonator and manufacturing method of surface acoustic wave filter, and communication device

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JPH05291873A (en) * 1992-04-10 1993-11-05 Mitsubishi Electric Corp Surface acoustic wave stimulation device
JP2003273691A (en) * 1993-03-15 2003-09-26 Matsushita Electric Ind Co Ltd Surface acoustic wave device
JPH1188101A (en) * 1997-07-08 1999-03-30 Toshiba Corp Surface acoustic wave element and manufacture of the surface acoustic wave element
JP3717034B2 (en) * 1998-11-10 2005-11-16 株式会社村田製作所 Surface acoustic wave device
JP2004129223A (en) * 2002-07-31 2004-04-22 Murata Mfg Co Ltd Piezoelectric component and manufacturing method thereof
US7230512B1 (en) * 2003-08-19 2007-06-12 Triquint, Inc. Wafer-level surface acoustic wave filter package with temperature-compensating characteristics
TW201021409A (en) * 2008-11-25 2010-06-01 Advance Design Technology Inc A composite substrate having high surface acoustic wave velocity and high electromechanical coupling coefficient
JP5807715B2 (en) * 2012-03-23 2015-11-10 株式会社村田製作所 Elastic wave filter element and manufacturing method thereof
CN105164919B (en) * 2013-03-21 2017-04-26 日本碍子株式会社 Composite substrate for elastic wave element and elastic wave element
JP6385648B2 (en) * 2013-05-14 2018-09-05 太陽誘電株式会社 Acoustic wave device and method of manufacturing acoustic wave device
WO2015001900A1 (en) * 2013-07-02 2015-01-08 日本碍子株式会社 Acoustic wave device
WO2016068096A1 (en) * 2014-10-30 2016-05-06 株式会社村田製作所 Filter component with passive elements, and high-frequency module
WO2016088830A1 (en) * 2014-12-04 2016-06-09 株式会社村田製作所 Elastic wave device manufacturing method and elastic wave device
CN107005228B (en) * 2014-12-04 2020-07-14 株式会社村田制作所 Electronic component and method for manufacturing the same
CN107615660B (en) * 2015-06-24 2020-12-22 株式会社村田制作所 Elastic wave filter device
US10574203B2 (en) * 2015-07-28 2020-02-25 Qorvo Us, Inc. Bonded wafers and surface acoustic wave devices using same
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Also Published As

Publication number Publication date
US20200067482A1 (en) 2020-02-27
GB2578202A (en) 2020-04-22
JP7374658B2 (en) 2023-11-07
GB201912082D0 (en) 2019-10-09
GB2608902A (en) 2023-01-18
DE102019212548A9 (en) 2020-04-23
KR20200022357A (en) 2020-03-03
GB2578202B (en) 2022-11-02
US11133789B2 (en) 2021-09-28
GB2608902B (en) 2023-05-17
TWI811431B (en) 2023-08-11
TW202023187A (en) 2020-06-16
JP2020031428A (en) 2020-02-27
CN110858763A (en) 2020-03-03
DE102019212548A1 (en) 2020-02-27
GB202210777D0 (en) 2022-09-07

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