SG10201906514UA - Chalcogenide material and electronic device including the same - Google Patents
Chalcogenide material and electronic device including the sameInfo
- Publication number
- SG10201906514UA SG10201906514UA SG10201906514UA SG10201906514UA SG10201906514UA SG 10201906514U A SG10201906514U A SG 10201906514UA SG 10201906514U A SG10201906514U A SG 10201906514UA SG 10201906514U A SG10201906514U A SG 10201906514UA SG 10201906514U A SG10201906514U A SG 10201906514UA
- Authority
- SG
- Singapore
- Prior art keywords
- same
- electronic device
- device including
- chalcogenide material
- chalcogenide
- Prior art date
Links
- 150000004770 chalcogenides Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G28/00—Compounds of arsenic
- C01G28/002—Compounds containing, besides arsenic, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180096780A KR102635268B1 (en) | 2018-08-20 | 2018-08-20 | Chacogenide material and electronic device including the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201906514UA true SG10201906514UA (en) | 2020-03-30 |
Family
ID=69523048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201906514UA SG10201906514UA (en) | 2018-08-20 | 2019-07-12 | Chalcogenide material and electronic device including the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US10998499B2 (en) |
KR (1) | KR102635268B1 (en) |
CN (1) | CN110844891B (en) |
SG (1) | SG10201906514UA (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102636534B1 (en) | 2018-08-20 | 2024-02-15 | 에스케이하이닉스 주식회사 | Chalcogenide material and electronic device including the same |
KR20200106681A (en) * | 2019-03-05 | 2020-09-15 | 에스케이하이닉스 주식회사 | Electronic device and method for fabricating the same |
KR20210041974A (en) * | 2019-10-08 | 2021-04-16 | 에스케이하이닉스 주식회사 | Electronic device and manufacturing method of electronic device |
US11271155B2 (en) | 2020-03-10 | 2022-03-08 | International Business Machines Corporation | Suppressing oxidation of silicon germanium selenium arsenide material |
US11355552B2 (en) | 2020-08-06 | 2022-06-07 | Macronix International Co., Ltd. | Memory material, and memory device applying the same |
KR20220021550A (en) * | 2020-08-14 | 2022-02-22 | 삼성전자주식회사 | Semiconductor device including data storage material pattern and selector material pattern |
KR20230020815A (en) * | 2021-08-04 | 2023-02-13 | 삼성전자주식회사 | Switching device and memory device including the same |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7589343B2 (en) * | 2002-12-13 | 2009-09-15 | Intel Corporation | Memory and access device and method therefor |
US7414883B2 (en) * | 2006-04-20 | 2008-08-19 | Intel Corporation | Programming a normally single phase chalcogenide material for use as a memory or FPLA |
KR20090010500A (en) * | 2007-07-23 | 2009-01-30 | 엘지전자 주식회사 | Solar cell having chalcogenide thin film |
KR20100000927A (en) * | 2008-06-26 | 2010-01-06 | 삼성전자주식회사 | Method of manufacturing a phase-change memory device |
US8148707B2 (en) * | 2008-12-30 | 2012-04-03 | Stmicroelectronics S.R.L. | Ovonic threshold switch film composition for TSLAGS material |
KR101535462B1 (en) * | 2009-08-27 | 2015-07-09 | 삼성전자주식회사 | Non-volatile memory device having phase-change material |
US8642985B2 (en) | 2011-06-30 | 2014-02-04 | Industrial Technology Research Institute | Memory Cell |
US9379321B1 (en) * | 2015-03-20 | 2016-06-28 | Intel Corporation | Chalcogenide glass composition and chalcogenide switch devices |
KR20170099214A (en) * | 2016-02-23 | 2017-08-31 | 삼성전자주식회사 | Variable resistance memory devices and methods of manufacturing the same |
KR102578481B1 (en) * | 2016-03-15 | 2023-09-14 | 삼성전자주식회사 | Semiconductor memory device and method of manufacturing the same |
KR102571566B1 (en) * | 2016-07-15 | 2023-08-29 | 삼성전자주식회사 | Semiconductor Memory Device |
KR102532201B1 (en) * | 2016-07-22 | 2023-05-12 | 삼성전자 주식회사 | Memory device |
KR102530067B1 (en) * | 2016-07-28 | 2023-05-08 | 삼성전자주식회사 | Variable resistance memory devices and methods of manufacturing the same |
KR102584288B1 (en) * | 2016-08-03 | 2023-09-27 | 삼성전자주식회사 | Non-volatile memory device |
US10163977B1 (en) * | 2017-03-22 | 2018-12-25 | Micron Technology, Inc. | Chalcogenide memory device components and composition |
-
2018
- 2018-08-20 KR KR1020180096780A patent/KR102635268B1/en active IP Right Grant
-
2019
- 2019-05-14 US US16/412,287 patent/US10998499B2/en active Active
- 2019-07-12 SG SG10201906514UA patent/SG10201906514UA/en unknown
- 2019-07-29 CN CN201910688303.XA patent/CN110844891B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN110844891B (en) | 2024-05-03 |
US10998499B2 (en) | 2021-05-04 |
US20200058871A1 (en) | 2020-02-20 |
KR20200021254A (en) | 2020-02-28 |
CN110844891A (en) | 2020-02-28 |
KR102635268B1 (en) | 2024-02-13 |
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