SG10201900388VA - Semiconductor Device Including Through Silicon Vias Distributing Current - Google Patents
Semiconductor Device Including Through Silicon Vias Distributing CurrentInfo
- Publication number
- SG10201900388VA SG10201900388VA SG10201900388VA SG10201900388VA SG10201900388VA SG 10201900388V A SG10201900388V A SG 10201900388VA SG 10201900388V A SG10201900388V A SG 10201900388VA SG 10201900388V A SG10201900388V A SG 10201900388VA SG 10201900388V A SG10201900388V A SG 10201900388VA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon vias
- semiconductor device
- device including
- silicon
- distributing current
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/073—Apertured devices mounted on one or more rods passed through the apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
- H01L2225/06544—Design considerations for via connections, e.g. geometry or layout
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
OF THE DISCLOSURE A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view. FIG. 1
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180012102A KR102498883B1 (en) | 2018-01-31 | 2018-01-31 | Semiconductor device including through electrodes distributing current |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201900388VA true SG10201900388VA (en) | 2019-08-27 |
Family
ID=64901856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201900388VA SG10201900388VA (en) | 2018-01-31 | 2019-01-16 | Semiconductor Device Including Through Silicon Vias Distributing Current |
Country Status (6)
Country | Link |
---|---|
US (1) | US10784184B2 (en) |
EP (1) | EP3522214B1 (en) |
KR (1) | KR102498883B1 (en) |
CN (1) | CN110098163B (en) |
SG (1) | SG10201900388VA (en) |
TW (1) | TWI781261B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11532349B2 (en) | 2021-04-02 | 2022-12-20 | Micron Technology, Inc. | Power distribution for stacked memory |
US11721385B2 (en) * | 2021-08-12 | 2023-08-08 | Micron Technology, Inc. | Dynamic power distribution for stacked memory |
CN116108900A (en) * | 2021-11-05 | 2023-05-12 | 安徽寒武纪信息科技有限公司 | Accelerator structure, method of generating accelerator structure, and apparatus therefor |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008159736A (en) * | 2006-12-22 | 2008-07-10 | Elpida Memory Inc | Semiconductor device and its power supplying method |
US8174841B2 (en) | 2009-04-27 | 2012-05-08 | International Business Machines Corporation | Adaptive interconnect structure |
US8247906B2 (en) | 2009-07-06 | 2012-08-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Supplying power to integrated circuits using a grid matrix formed of through-silicon vias |
US8492905B2 (en) * | 2009-10-07 | 2013-07-23 | Qualcomm Incorporated | Vertically stackable dies having chip identifier structures |
US8698321B2 (en) * | 2009-10-07 | 2014-04-15 | Qualcomm Incorporated | Vertically stackable dies having chip identifier structures |
JP5593053B2 (en) | 2009-10-09 | 2014-09-17 | ピーエスフォー ルクスコ エスエイアールエル | Semiconductor device |
JP5490482B2 (en) * | 2009-10-09 | 2014-05-14 | ピーエスフォー ルクスコ エスエイアールエル | Semiconductor device |
US8310841B2 (en) | 2009-11-12 | 2012-11-13 | International Business Machines Corporation | Integrated circuit die stacks having initially identical dies personalized with switches and methods of making the same |
US8304863B2 (en) | 2010-02-09 | 2012-11-06 | International Business Machines Corporation | Electromigration immune through-substrate vias |
EP2372379B1 (en) | 2010-03-26 | 2013-01-23 | Imec | Test access architecture for TSV-based 3D stacked ICS |
KR101728068B1 (en) * | 2010-06-01 | 2017-04-19 | 삼성전자 주식회사 | Stacked semiconductor memory device, memory system including the same, and method of repairing defects of through silicon vias |
US9437561B2 (en) | 2010-09-09 | 2016-09-06 | Advanced Micro Devices, Inc. | Semiconductor chip with redundant thru-silicon-vias |
JP2012230961A (en) * | 2011-04-25 | 2012-11-22 | Elpida Memory Inc | Semiconductor device |
US8878369B2 (en) | 2011-08-15 | 2014-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low power/high speed TSV interface design |
US8599595B1 (en) | 2011-12-13 | 2013-12-03 | Michael C. Stephens, Jr. | Memory devices with serially connected signals for stacked arrangements |
JP5932324B2 (en) * | 2011-12-21 | 2016-06-08 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | Semiconductor device and test method thereof |
JP6054029B2 (en) * | 2011-12-22 | 2016-12-27 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | Semiconductor chip and semiconductor device |
CN104471708B (en) * | 2012-02-08 | 2017-05-24 | 吉林克斯公司 | Stacked die assembly with multiple interposers |
WO2014077154A1 (en) | 2012-11-13 | 2014-05-22 | ピーエスフォー ルクスコ エスエイアールエル | Semiconductor device |
KR102101403B1 (en) | 2013-12-30 | 2020-04-17 | 에스케이하이닉스 주식회사 | 3d semiconductor apparatus for initializing channels |
JP2015141725A (en) | 2014-01-28 | 2015-08-03 | マイクロン テクノロジー, インク. | Semiconductor device, and information processing system equipped with the same |
KR102373543B1 (en) * | 2015-04-08 | 2022-03-11 | 삼성전자주식회사 | Method and device for controlling operation using temperature deviation in multi-chip package |
US9559086B2 (en) | 2015-05-29 | 2017-01-31 | Micron Technology, Inc. | Semiconductor device with modified current distribution |
JP6672626B2 (en) | 2015-07-22 | 2020-03-25 | 富士通株式会社 | Semiconductor device and method of controlling semiconductor device |
JP6528592B2 (en) | 2015-08-17 | 2019-06-12 | 富士通株式会社 | Semiconductor device |
-
2018
- 2018-01-31 KR KR1020180012102A patent/KR102498883B1/en active IP Right Grant
- 2018-12-13 TW TW107145082A patent/TWI781261B/en active
- 2018-12-17 EP EP18212994.0A patent/EP3522214B1/en active Active
- 2018-12-24 CN CN201811580255.4A patent/CN110098163B/en active Active
-
2019
- 2019-01-16 SG SG10201900388VA patent/SG10201900388VA/en unknown
- 2019-01-31 US US16/263,408 patent/US10784184B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102498883B1 (en) | 2023-02-13 |
US20190237390A1 (en) | 2019-08-01 |
EP3522214A1 (en) | 2019-08-07 |
CN110098163B (en) | 2024-03-08 |
EP3522214B1 (en) | 2024-05-01 |
CN110098163A (en) | 2019-08-06 |
TW201941380A (en) | 2019-10-16 |
TWI781261B (en) | 2022-10-21 |
US10784184B2 (en) | 2020-09-22 |
KR20190092854A (en) | 2019-08-08 |
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