SG10201807945VA - Image Sensors - Google Patents
Image SensorsInfo
- Publication number
- SG10201807945VA SG10201807945VA SG10201807945VA SG10201807945VA SG10201807945VA SG 10201807945V A SG10201807945V A SG 10201807945VA SG 10201807945V A SG10201807945V A SG 10201807945VA SG 10201807945V A SG10201807945V A SG 10201807945VA SG 10201807945V A SG10201807945V A SG 10201807945VA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- conversion element
- end connected
- floating diffusion
- transfer transistor
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
of the Disclosure An image sensor includes a substrate which includes a first surface and a light-incident dsecond dsurface dfacing dthe dfirst dsurface, da dfirst dsemiconductor photoelectric dconversion delement dinside dthe dsubstrate, dan dorganic dphotoelectric conversion element on the second surface of the substrate, a first floating diffusion region on the first surface of the substrate, a first transfer transistor having a first end connected to the first semiconductor photoelectric conversion element and a second end connected to the first floating diffusion region, and a second transfer transistor having a first end connected to the organic photoelectric conversion element and a second end connected to the first floating diffusion region. The first semiconductor photoelectric conversion element, the first floating diffusion region, and the first transfer transistor and the second transfer transistor may be in a first pixel region of the substrate. FIG. 5
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180023655A KR102506885B1 (en) | 2018-02-27 | 2018-02-27 | Image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201807945VA true SG10201807945VA (en) | 2019-09-27 |
Family
ID=67550371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201807945VA SG10201807945VA (en) | 2018-02-27 | 2018-09-13 | Image Sensors |
Country Status (5)
Country | Link |
---|---|
US (1) | US10692936B2 (en) |
KR (1) | KR102506885B1 (en) |
CN (1) | CN110197833B (en) |
DE (1) | DE102018121990B4 (en) |
SG (1) | SG10201807945VA (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7308595B2 (en) * | 2018-07-02 | 2023-07-14 | Tianma Japan株式会社 | image sensor |
US11335716B2 (en) * | 2019-12-24 | 2022-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photosensing pixel, image sensor and method of fabricating the same |
KR20220007261A (en) * | 2020-07-10 | 2022-01-18 | 삼성전자주식회사 | Image sensor |
KR20220087678A (en) * | 2020-12-18 | 2022-06-27 | 삼성전자주식회사 | Image sensor and image sensing circuit |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101033355B1 (en) * | 2008-09-30 | 2011-05-09 | 주식회사 동부하이텍 | Image sensor and method of fabricating the same |
JP5476745B2 (en) * | 2009-03-05 | 2014-04-23 | ソニー株式会社 | SOLID-STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
KR101650469B1 (en) | 2009-11-05 | 2016-08-23 | 삼성전자주식회사 | Cmos image sensor having drain path shielding metal layer and method for manufacturing same |
KR20110079069A (en) * | 2009-12-31 | 2011-07-07 | 주식회사 동부하이텍 | Image sensor |
US9171799B2 (en) * | 2010-03-25 | 2015-10-27 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus, image pickup system, and manufacturing method therefor |
TW201403804A (en) | 2012-07-05 | 2014-01-16 | Sony Corp | Solid-state imaging device, method for manufacturing same, and electronic device |
JP2014060199A (en) * | 2012-09-14 | 2014-04-03 | Toshiba Corp | Method of manufacturing solid-state imaging device and solid-state imaging device |
KR102034482B1 (en) | 2013-03-04 | 2019-10-21 | 삼성전자주식회사 | Image sensor and method of forming the same |
KR20140130969A (en) * | 2013-05-02 | 2014-11-12 | 삼성전자주식회사 | Image sensor and method for manufacturing the same |
JP2015012127A (en) * | 2013-06-28 | 2015-01-19 | ソニー株式会社 | Solid state image sensor and electronic apparatus |
JP6108172B2 (en) | 2013-09-02 | 2017-04-05 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and electronic device |
KR20150123088A (en) | 2014-04-24 | 2015-11-03 | 삼성전자주식회사 | Image data processing device having image sensor with skewed pixel structure |
KR102328769B1 (en) | 2014-06-20 | 2021-11-18 | 삼성전자주식회사 | Image sensor and image processing system including the same |
JP2016009777A (en) | 2014-06-25 | 2016-01-18 | ソニー株式会社 | Solid state image pickup element and manufacturing method of the same, and electronic apparatus |
KR102366416B1 (en) * | 2014-08-11 | 2022-02-23 | 삼성전자주식회사 | CMOS image sensor |
JP6555890B2 (en) * | 2015-01-23 | 2019-08-07 | キヤノン株式会社 | Imaging apparatus, imaging system, and driving method of imaging apparatus |
JP6800839B2 (en) | 2015-03-09 | 2020-12-16 | ソニーセミコンダクタソリューションズ株式会社 | Image sensor, its manufacturing method, and electronic equipment |
US9620548B1 (en) | 2015-10-30 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with wide contact |
KR20170070693A (en) * | 2015-12-14 | 2017-06-22 | 삼성전자주식회사 | Image sensor |
KR102491580B1 (en) | 2015-12-15 | 2023-01-25 | 삼성전자주식회사 | Image sensor and method for manufacturing the same |
DE102016124298B4 (en) | 2015-12-15 | 2023-11-30 | Samsung Electronics Co., Ltd. | Image sensors and method for forming image sensors |
EP3447801A4 (en) * | 2016-04-22 | 2020-03-25 | Sony Corporation | Solid-state imaging element, driving method, and electronic device |
KR102582122B1 (en) | 2016-07-11 | 2023-09-21 | 삼성전자주식회사 | Image sensor and electronic device including the same |
KR102635858B1 (en) * | 2017-01-05 | 2024-02-15 | 삼성전자주식회사 | Image sensor |
-
2018
- 2018-02-27 KR KR1020180023655A patent/KR102506885B1/en active IP Right Grant
- 2018-08-23 US US16/110,521 patent/US10692936B2/en active Active
- 2018-09-10 DE DE102018121990.3A patent/DE102018121990B4/en active Active
- 2018-09-13 SG SG10201807945VA patent/SG10201807945VA/en unknown
- 2018-12-11 CN CN201811507784.1A patent/CN110197833B/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102018121990A1 (en) | 2019-08-29 |
CN110197833B (en) | 2024-06-07 |
CN110197833A (en) | 2019-09-03 |
KR102506885B1 (en) | 2023-03-06 |
KR20190102767A (en) | 2019-09-04 |
DE102018121990B4 (en) | 2024-02-08 |
US20190267429A1 (en) | 2019-08-29 |
US10692936B2 (en) | 2020-06-23 |
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