SG10201807222TA - Metal chemical mechanical planarization (cmp) composition and methods therefore - Google Patents

Metal chemical mechanical planarization (cmp) composition and methods therefore

Info

Publication number
SG10201807222TA
SG10201807222TA SG10201807222TA SG10201807222TA SG10201807222TA SG 10201807222T A SG10201807222T A SG 10201807222TA SG 10201807222T A SG10201807222T A SG 10201807222TA SG 10201807222T A SG10201807222T A SG 10201807222TA SG 10201807222T A SG10201807222T A SG 10201807222TA
Authority
SG
Singapore
Prior art keywords
cmp
chemical mechanical
mechanical planarization
formulations
composition
Prior art date
Application number
SG10201807222TA
Inventor
Shi Xiaobo
Leonard O'neill Mark
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10201807222TA publication Critical patent/SG10201807222TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)

Abstract

METAL CHEMICAL MECHANICAL PLANARIZATION (CMP) COMPOSITION AND METHODS THEREFORE Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations. (No drawing to be published)
SG10201807222TA 2017-08-24 2018-08-24 Metal chemical mechanical planarization (cmp) composition and methods therefore SG10201807222TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762549608P 2017-08-24 2017-08-24
US16/110,422 US10465096B2 (en) 2017-08-24 2018-08-23 Metal chemical mechanical planarization (CMP) composition and methods therefore

Publications (1)

Publication Number Publication Date
SG10201807222TA true SG10201807222TA (en) 2019-03-28

Family

ID=63405126

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201807222TA SG10201807222TA (en) 2017-08-24 2018-08-24 Metal chemical mechanical planarization (cmp) composition and methods therefore

Country Status (8)

Country Link
US (2) US10465096B2 (en)
EP (1) EP3447100A1 (en)
JP (1) JP6730385B2 (en)
KR (1) KR102287000B1 (en)
CN (1) CN109456704B (en)
IL (1) IL261370B (en)
SG (1) SG10201807222TA (en)
TW (1) TWI685553B (en)

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US11401441B2 (en) * 2017-08-17 2022-08-02 Versum Materials Us, Llc Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US10465096B2 (en) * 2017-08-24 2019-11-05 Versum Materials Us, Llc Metal chemical mechanical planarization (CMP) composition and methods therefore
CN111656283B (en) * 2019-01-03 2021-09-14 京东方科技集团股份有限公司 Template preparation method
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
EP4038155A4 (en) * 2019-09-30 2023-11-22 Versum Materials US, LLC Low dishing copper chemical mechanical planarization
CN111618667A (en) * 2020-06-16 2020-09-04 岳阳凯美特电子特种稀有气体有限公司 Treatment method for inner wall of steel cylinder filled with high-purity halogen mixed gas and polishing powder used by same
JP2024501478A (en) * 2020-12-14 2024-01-12 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー Chemical mechanical planarization (CMP) for copper and through-silicon vias (TSV)
JP2022180055A (en) * 2021-05-24 2022-12-06 信越化学工業株式会社 Polishing composition
CN113789127B (en) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 Polishing solution for copper film of through silicon via

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Also Published As

Publication number Publication date
CN109456704A (en) 2019-03-12
TW201912739A (en) 2019-04-01
US20200032107A1 (en) 2020-01-30
IL261370A (en) 2019-02-28
US20190062597A1 (en) 2019-02-28
JP2019039004A (en) 2019-03-14
US10465096B2 (en) 2019-11-05
US10920106B2 (en) 2021-02-16
JP6730385B2 (en) 2020-07-29
KR102287000B1 (en) 2021-08-09
KR20190022412A (en) 2019-03-06
CN109456704B (en) 2021-08-27
TWI685553B (en) 2020-02-21
IL261370B (en) 2021-10-31
EP3447100A1 (en) 2019-02-27

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