SG10201805669SA - Photomask Blank, Photomask Blank Making Method, and Photomask Making Method - Google Patents

Photomask Blank, Photomask Blank Making Method, and Photomask Making Method

Info

Publication number
SG10201805669SA
SG10201805669SA SG10201805669SA SG10201805669SA SG10201805669SA SG 10201805669S A SG10201805669S A SG 10201805669SA SG 10201805669S A SG10201805669S A SG 10201805669SA SG 10201805669S A SG10201805669S A SG 10201805669SA SG 10201805669S A SG10201805669S A SG 10201805669SA
Authority
SG
Singapore
Prior art keywords
photomask
making method
film
photomask blank
layer
Prior art date
Application number
SG10201805669SA
Inventor
Takuro Kosaka
Hideo Kaneko
Shigeo Irie
Naoki Kawaura
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201805669SA publication Critical patent/SG10201805669SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Photomask Blank, Photomask Blank Making Method, and Photomask Making Method 5 A photomask blank is provided comprising a transparent substrate, a first film of chromium-containing material on the substrate, and a second film of silicon/oxygen-containing material disposed contiguous to the first film. The second film includes a first layer contiguous to the first film and a second layer spaced apart from the first layer in film thickness direction. The oxygen content of the first layer is lower than 10 the oxygen content of the second layer. During etching of the first film, this setting prevents an etching rate from ramping up at the interface between the first and second films. Fig. 2 15
SG10201805669SA 2017-07-28 2018-06-29 Photomask Blank, Photomask Blank Making Method, and Photomask Making Method SG10201805669SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017146718A JP6753375B2 (en) 2017-07-28 2017-07-28 Photomask blank, photomask blank manufacturing method and photomask manufacturing method

Publications (1)

Publication Number Publication Date
SG10201805669SA true SG10201805669SA (en) 2019-02-27

Family

ID=62975945

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201805669SA SG10201805669SA (en) 2017-07-28 2018-06-29 Photomask Blank, Photomask Blank Making Method, and Photomask Making Method

Country Status (7)

Country Link
US (1) US11073756B2 (en)
EP (1) EP3444670B1 (en)
JP (1) JP6753375B2 (en)
KR (1) KR102302944B1 (en)
CN (1) CN109307982B (en)
SG (1) SG10201805669SA (en)
TW (1) TWI751361B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7192731B2 (en) * 2019-09-27 2022-12-20 信越化学工業株式会社 Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04147142A (en) * 1990-10-09 1992-05-20 Mitsubishi Electric Corp Photomask and its production
JPH0749558A (en) 1993-08-05 1995-02-21 Sony Corp Production of phase shift mask
US6472107B1 (en) * 1999-09-30 2002-10-29 Photronics, Inc. Disposable hard mask for photomask plasma etching
US7365014B2 (en) * 2004-01-30 2008-04-29 Applied Materials, Inc. Reticle fabrication using a removable hard mask
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP5036544B2 (en) * 2005-09-09 2012-09-26 Ｈｏｙａ株式会社 Photomask blank, photomask and method for manufacturing the same, and method for manufacturing a semiconductor device
KR101056592B1 (en) * 2005-11-16 2011-08-11 호야 가부시키가이샤 Mask Blanks and Photomasks
JP5323526B2 (en) * 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 Phase shift mask blank and method of manufacturing phase shift mask
JP5257256B2 (en) * 2009-06-11 2013-08-07 信越化学工業株式会社 Photomask manufacturing method
JP5704754B2 (en) * 2010-01-16 2015-04-22 Hoya株式会社 Mask blank and transfer mask manufacturing method
JP5464186B2 (en) * 2011-09-07 2014-04-09 信越化学工業株式会社 Photomask blank, photomask and manufacturing method thereof
EP2594994B1 (en) * 2011-11-21 2016-05-18 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method
JP5739375B2 (en) * 2012-05-16 2015-06-24 信越化学工業株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask
WO2014112457A1 (en) * 2013-01-15 2014-07-24 Hoya株式会社 Mask blank, phase-shift mask, and method for manufacturing mask blank and phase-shift mask
JP6258151B2 (en) * 2013-09-25 2018-01-10 信越化学工業株式会社 Photomask blank and manufacturing method thereof
JP6264238B2 (en) * 2013-11-06 2018-01-24 信越化学工業株式会社 Halftone phase shift photomask blank, halftone phase shift photomask, and pattern exposure method
JP6292581B2 (en) 2014-03-30 2018-03-14 Hoya株式会社 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
JP2016035559A (en) * 2014-08-04 2016-03-17 信越化学工業株式会社 Halftone phase shift photomask blank and method for manufacturing the same
US10146123B2 (en) * 2014-12-26 2018-12-04 Hoya Corporation Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6601245B2 (en) 2015-03-04 2019-11-06 信越化学工業株式会社 Photomask blank, photomask manufacturing method, and mask pattern forming method
JP6418035B2 (en) * 2015-03-31 2018-11-07 信越化学工業株式会社 Phase shift mask blanks and phase shift masks
JP6380204B2 (en) * 2015-03-31 2018-08-29 信越化学工業株式会社 Halftone phase shift mask blank, halftone phase shift mask and pattern exposure method
JP6394544B2 (en) * 2015-09-04 2018-09-26 信越化学工業株式会社 Photomask blank defect inspection method, sorting method, and manufacturing method
JP6398927B2 (en) * 2015-09-18 2018-10-03 信越化学工業株式会社 Photomask blank, manufacturing method thereof and photomask
JP6900873B2 (en) * 2016-12-26 2021-07-07 信越化学工業株式会社 Photomask blank and its manufacturing method
JP6900872B2 (en) * 2016-12-26 2021-07-07 信越化学工業株式会社 Photomask blank and its manufacturing method
JP6791031B2 (en) * 2017-06-13 2020-11-25 信越化学工業株式会社 Photomask blank and its manufacturing method

Also Published As

Publication number Publication date
KR102302944B1 (en) 2021-09-17
KR20190013550A (en) 2019-02-11
US11073756B2 (en) 2021-07-27
CN109307982A (en) 2019-02-05
EP3444670A1 (en) 2019-02-20
CN109307982B (en) 2024-09-03
TW201920743A (en) 2019-06-01
TWI751361B (en) 2022-01-01
JP2019028220A (en) 2019-02-21
JP6753375B2 (en) 2020-09-09
EP3444670B1 (en) 2020-01-08
US20190033703A1 (en) 2019-01-31

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