SG10201804633TA - Multi-mode system and method - Google Patents

Multi-mode system and method

Info

Publication number
SG10201804633TA
SG10201804633TA SG10201804633TA SG10201804633TA SG10201804633TA SG 10201804633T A SG10201804633T A SG 10201804633TA SG 10201804633T A SG10201804633T A SG 10201804633TA SG 10201804633T A SG10201804633T A SG 10201804633TA SG 10201804633T A SG10201804633T A SG 10201804633TA
Authority
SG
Singapore
Prior art keywords
axis
specular reflection
bright field
field unit
normal
Prior art date
Application number
SG10201804633TA
Inventor
Ben Ezer Zehava
Regensburger Menachem
Koren Shimon
Gilad Tomer
Shapira Shy
Original Assignee
Camtek Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Camtek Ltd filed Critical Camtek Ltd
Publication of SG10201804633TA publication Critical patent/SG10201804633TA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106—General arrangement of respective parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N2021/557—Detecting specular reflective parts on sample
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Abstract

MULTIMODE SYSTEM AND METHOD An inspection system for inspecting a semiconductor substrate, the inspection system may include an inspection unit that comprises a partially blocking bright field unit and a non- blocking bright field unit; wherein the partially blocking bright field unit is configured to block any specular reflection that fulfills the following: (a) the specular reflection is caused by illuminating, along a first axis, of an area of the wafer, (b) the specular reflection propagates along a second axis, (c) the first axis and the second axis are symmetrical about a normal to the area of the wafer, and (d) the normal is parallel to an optical axis of the partially blocking bright field unit; and wherein the non-blocking bright field unit is configured to pass to the image plane any specular reflection that fulfills the following: (a) the specular reflection is caused by illuminating, along the first axis, of an area of the wafer, (b) the specular reflection propagates along the second axis, (c) the first axis and the second axis are symmetrical about the normal, and (d) the normal is parallel to the optical axis of the partially blocking bright field unit. Fig 44
SG10201804633TA 2017-06-14 2018-06-01 Multi-mode system and method SG10201804633TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201762519497P 2017-06-14 2017-06-14

Publications (1)

Publication Number Publication Date
SG10201804633TA true SG10201804633TA (en) 2019-01-30

Family

ID=65137912

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804633TA SG10201804633TA (en) 2017-06-14 2018-06-01 Multi-mode system and method

Country Status (5)

Country Link
US (1) US10598607B2 (en)
JP (1) JP7165849B2 (en)
CN (1) CN109444162A (en)
SG (1) SG10201804633TA (en)
TW (1) TW201905475A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201803948D0 (en) * 2018-03-12 2018-04-25 Mbda Uk Ltd An imaging device
CN111952230B (en) * 2020-09-01 2021-03-16 无锡卓海科技有限公司 Transparent wafer edge extraction method of pre-alignment machine
US20220404143A1 (en) * 2021-06-18 2022-12-22 Kla Corporation Methods And Systems For Measurement Of Tilt And Overlay Of A Structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063514A (en) * 1983-09-17 1985-04-11 Nippon Kogaku Kk <Nikon> Projecting microscope for dark field of view
JP2003149169A (en) * 2001-11-16 2003-05-21 Tokyo Seimitsu Co Ltd Wafer defect examining device
US7053999B2 (en) * 2002-03-21 2006-05-30 Applied Materials, Inc. Method and system for detecting defects
JP4680545B2 (en) * 2004-07-15 2011-05-11 株式会社日立ハイテクノロジーズ Appearance inspection method and appearance inspection apparatus
JP4625716B2 (en) * 2005-05-23 2011-02-02 株式会社日立ハイテクノロジーズ Defect inspection apparatus and defect inspection method
TWI370894B (en) * 2007-02-26 2012-08-21 Corning Inc Method for measuring distortion
WO2012098550A1 (en) * 2011-01-19 2012-07-26 Nova Measuring Instruments Ltd. Optical system and method for measuring in three-dimensional structures
US9140544B2 (en) * 2011-07-19 2015-09-22 Nova Measuring Instruments Ltd. Optical system and method for measuring in patterned structures
US20130148115A1 (en) * 2011-12-12 2013-06-13 Yoav Berlatzky Optical system and method for inspection of patterned samples
US9347891B2 (en) * 2012-03-07 2016-05-24 Kla-Tencor Corporation Wafer and reticle inspection systems and methods for selecting illumination pupil configurations
JP5993691B2 (en) * 2012-09-28 2016-09-14 株式会社日立ハイテクノロジーズ Defect inspection apparatus and defect inspection method
RU2514162C1 (en) * 2012-10-11 2014-04-27 Владимир Георгиевич Сидорович Optical device
JP6095382B2 (en) * 2013-01-28 2017-03-15 横浜リーディングデザイン合資会社 Optical system, phase plate used in optical system, and method of manufacturing optical system
US8896825B2 (en) * 2013-02-01 2014-11-25 Zeta Instruments, Inc. Optical inspector
JP6226577B2 (en) * 2013-06-12 2017-11-08 オリンパス株式会社 Confocal laser scanning microscope
US20160366315A1 (en) * 2015-06-14 2016-12-15 Camtek Ltd. Aperture stop

Also Published As

Publication number Publication date
TW201905475A (en) 2019-02-01
US20190033234A1 (en) 2019-01-31
US10598607B2 (en) 2020-03-24
CN109444162A (en) 2019-03-08
JP2019049520A (en) 2019-03-28
JP7165849B2 (en) 2022-11-07

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