SG10201708625XA - Toroidal plasma processing apparatus - Google Patents
Toroidal plasma processing apparatusInfo
- Publication number
- SG10201708625XA SG10201708625XA SG10201708625XA SG10201708625XA SG10201708625XA SG 10201708625X A SG10201708625X A SG 10201708625XA SG 10201708625X A SG10201708625X A SG 10201708625XA SG 10201708625X A SG10201708625X A SG 10201708625XA SG 10201708625X A SG10201708625X A SG 10201708625XA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- plasma processing
- toroidal plasma
- toroidal
- processing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361791274P | 2013-03-15 | 2013-03-15 | |
US201361910387P | 2013-12-01 | 2013-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201708625XA true SG10201708625XA (en) | 2017-11-29 |
Family
ID=51528210
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201900327YA SG10201900327YA (en) | 2013-03-15 | 2014-03-14 | A method of cvd plasma processing with a toroidal plasma processing apparatus |
SG11201506564RA SG11201506564RA (en) | 2013-03-15 | 2014-03-14 | Toroidal plasma processing apparatus |
SG10201708625XA SG10201708625XA (en) | 2013-03-15 | 2014-03-14 | Toroidal plasma processing apparatus |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201900327YA SG10201900327YA (en) | 2013-03-15 | 2014-03-14 | A method of cvd plasma processing with a toroidal plasma processing apparatus |
SG11201506564RA SG11201506564RA (en) | 2013-03-15 | 2014-03-14 | Toroidal plasma processing apparatus |
Country Status (8)
Country | Link |
---|---|
US (3) | US20140272108A1 (ja) |
EP (1) | EP2974558A4 (ja) |
JP (2) | JP6417390B2 (ja) |
KR (1) | KR102003106B1 (ja) |
CN (1) | CN105144849B (ja) |
MY (1) | MY187052A (ja) |
SG (3) | SG10201900327YA (ja) |
WO (1) | WO2014143775A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101954999B1 (ko) * | 2013-01-14 | 2019-03-06 | 캘리포니아 인스티튜트 오브 테크놀로지 | 그라펜을 형성시키는 방법 및 시스템 |
JP6417390B2 (ja) * | 2013-03-15 | 2018-11-07 | プラズマビリティー, エルエルシー | Cvdプラズマ処理の方法 |
US10486232B2 (en) * | 2015-04-21 | 2019-11-26 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor manufacturing device with embedded fluid conduits |
US20180130639A1 (en) * | 2015-05-04 | 2018-05-10 | Michael Nicholas Vranich | External plasma system |
WO2016187166A1 (en) | 2015-05-21 | 2016-11-24 | Plasmability, Llc | Toroidal plasma processing apparatus with a shaped workpiece holder |
US10249495B2 (en) * | 2016-06-28 | 2019-04-02 | Applied Materials, Inc. | Diamond like carbon layer formed by an electron beam plasma process |
DE102018204585A1 (de) * | 2017-03-31 | 2018-10-04 | centrotherm international AG | Plasmagenerator, Plasma-Behandlungsvorrichtung und Verfahren zum gepulsten Bereitstellen von elektrischer Leistung |
US20190006154A1 (en) * | 2017-06-28 | 2019-01-03 | Chaolin Hu | Toroidal Plasma Chamber |
CN108303216B (zh) * | 2018-01-02 | 2020-03-06 | 京东方科技集团股份有限公司 | 一种气体检测装置 |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
US11019715B2 (en) * | 2018-07-13 | 2021-05-25 | Mks Instruments, Inc. | Plasma source having a dielectric plasma chamber with improved plasma resistance |
JP2022508353A (ja) | 2018-08-23 | 2022-01-19 | トランスフォーム マテリアルズ エルエルシー | 気体を処理するための系および方法 |
US11633710B2 (en) | 2018-08-23 | 2023-04-25 | Transform Materials Llc | Systems and methods for processing gases |
CN110872116A (zh) * | 2018-09-04 | 2020-03-10 | 新奥科技发展有限公司 | 一种石墨烯的制备装置和制备方法 |
WO2021026888A1 (zh) * | 2019-08-15 | 2021-02-18 | 常州机电职业技术学院 | 石墨烯表面等离子体改性处理装置及处理方法 |
CN110357085B (zh) * | 2019-08-15 | 2020-04-24 | 常州机电职业技术学院 | 一种石墨烯表面等离子体改性处理装置及处理方法 |
EP4073846A1 (en) | 2019-12-11 | 2022-10-19 | Jozef Stefan Institute | Method and apparatus for deposition of carbon nanostructures |
KR20220107521A (ko) * | 2021-01-25 | 2022-08-02 | (주) 엔피홀딩스 | 반응기, 이를 포함하는 공정 처리 장치 및 반응기 제조 방법 |
CN115274395B (zh) * | 2022-09-27 | 2022-12-09 | 北京芯美达科技有限公司 | 一种扩大等离子体有效反应面积的方法 |
Family Cites Families (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4431898A (en) * | 1981-09-01 | 1984-02-14 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
JPH04238897A (ja) * | 1991-01-07 | 1992-08-26 | Toyota Motor Corp | ダイヤモンド膜形成方法 |
US6238588B1 (en) * | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
US5349154A (en) * | 1991-10-16 | 1994-09-20 | Rockwell International Corporation | Diamond growth by microwave generated plasma flame |
US5397428A (en) * | 1991-12-20 | 1995-03-14 | The University Of North Carolina At Chapel Hill | Nucleation enhancement for chemical vapor deposition of diamond |
JPH0945497A (ja) * | 1995-08-02 | 1997-02-14 | Toshiba Mach Co Ltd | 誘電結合プラズマcvd方法およびその装置 |
JP3519046B2 (ja) * | 1996-09-10 | 2004-04-12 | 日立マクセル株式会社 | プラズマcvd装置 |
US6388226B1 (en) | 1997-06-26 | 2002-05-14 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US7166816B1 (en) | 1997-06-26 | 2007-01-23 | Mks Instruments, Inc. | Inductively-coupled torodial plasma source |
US8779322B2 (en) | 1997-06-26 | 2014-07-15 | Mks Instruments Inc. | Method and apparatus for processing metal bearing gases |
US6924455B1 (en) | 1997-06-26 | 2005-08-02 | Applied Science & Technology, Inc. | Integrated plasma chamber and inductively-coupled toroidal plasma source |
US7569790B2 (en) | 1997-06-26 | 2009-08-04 | Mks Instruments, Inc. | Method and apparatus for processing metal bearing gases |
US6815633B1 (en) | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6112696A (en) * | 1998-02-17 | 2000-09-05 | Dry Plasma Systems, Inc. | Downstream plasma using oxygen gas mixture |
EP1147544A2 (en) * | 1998-09-22 | 2001-10-24 | Applied Materials, Inc. | Rf plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
US6392351B1 (en) * | 1999-05-03 | 2002-05-21 | Evgeny V. Shun'ko | Inductive RF plasma source with external discharge bridge |
US6432260B1 (en) * | 1999-08-06 | 2002-08-13 | Advanced Energy Industries, Inc. | Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof |
US6418874B1 (en) | 2000-05-25 | 2002-07-16 | Applied Materials, Inc. | Toroidal plasma source for plasma processing |
US7520877B2 (en) * | 2000-06-07 | 2009-04-21 | Wisconsin Alumni Research Foundation | Radiofrequency ablation system using multiple prong probes |
US7223676B2 (en) * | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US7294563B2 (en) * | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
US6453842B1 (en) * | 2000-08-11 | 2002-09-24 | Applied Materials Inc. | Externally excited torroidal plasma source using a gas distribution plate |
US7430984B2 (en) * | 2000-08-11 | 2008-10-07 | Applied Materials, Inc. | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements |
US6551446B1 (en) * | 2000-08-11 | 2003-04-22 | Applied Materials Inc. | Externally excited torroidal plasma source with a gas distribution plate |
US6348126B1 (en) * | 2000-08-11 | 2002-02-19 | Applied Materials, Inc. | Externally excited torroidal plasma source |
US7320734B2 (en) * | 2000-08-11 | 2008-01-22 | Applied Materials, Inc. | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage |
EP1307896A2 (en) * | 2000-08-11 | 2003-05-07 | Applied Materials, Inc. | Externally excited torroidal plasma source |
US6930025B2 (en) | 2001-02-01 | 2005-08-16 | Canon Kabushiki Kaisha | Transparent conductive film formation process, photovoltaic device production process, transparent conductive film, and photovoltaic device |
US6634313B2 (en) * | 2001-02-13 | 2003-10-21 | Applied Materials, Inc. | High-frequency electrostatically shielded toroidal plasma and radical source |
US6583572B2 (en) | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
JP3662211B2 (ja) * | 2001-09-25 | 2005-06-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
AU2003234301A1 (en) * | 2002-05-01 | 2003-11-17 | Blacklight Power, Inc. | Diamond synthesis |
US20060162656A1 (en) * | 2002-07-31 | 2006-07-27 | Tokyo Electron Limited | Reduced volume, high conductance process chamber |
EP1537259B1 (en) | 2002-09-06 | 2010-11-24 | Element Six Limited | Method for altering the colour of a single crystal cvd diamond and diamond layer produced thereby |
KR100488348B1 (ko) * | 2002-11-14 | 2005-05-10 | 최대규 | 플라즈마 프로세스 챔버 및 시스템 |
GB0227261D0 (en) | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
US6927358B2 (en) | 2003-01-31 | 2005-08-09 | Advanced Energy Industries, Inc. | Vacuum seal protection in a dielectric break |
CA2522506A1 (en) * | 2003-04-15 | 2004-10-28 | Blacklight Power, Inc. | Plasma reactor and process for producing lower-energy hydrogen species |
US6872909B2 (en) * | 2003-04-16 | 2005-03-29 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel |
US8409400B2 (en) * | 2003-05-07 | 2013-04-02 | Gen Co., Ltd. | Inductive plasma chamber having multi discharge tube bridge |
US20040237897A1 (en) * | 2003-05-27 | 2004-12-02 | Hiroji Hanawa | High-Frequency electrostatically shielded toroidal plasma and radical source |
JP4052476B2 (ja) * | 2004-02-20 | 2008-02-27 | 三菱重工業株式会社 | SiN薄膜の製造方法 |
JP2006024442A (ja) * | 2004-07-08 | 2006-01-26 | Sharp Corp | 大気圧プラズマ処理装置及び処理方法 |
US7666464B2 (en) * | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
EP1831425B1 (en) * | 2004-11-08 | 2011-07-13 | MKS Instruments, Inc. | Method of disposing metal bearing gases |
KR101121418B1 (ko) * | 2005-02-17 | 2012-03-16 | 주성엔지니어링(주) | 토로이드형 코어를 포함하는 플라즈마 발생장치 |
US7312162B2 (en) * | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
KR100720989B1 (ko) * | 2005-07-15 | 2007-05-28 | 주식회사 뉴파워 프라즈마 | 멀티 챔버 플라즈마 프로세스 시스템 |
US7569791B2 (en) * | 2005-09-30 | 2009-08-04 | Energetiq Technology, Inc. | Inductively-driven plasma light source |
US20100209311A1 (en) * | 2005-10-12 | 2010-08-19 | Blacklight Power, Inc. | Plasma reactor and process for producing lower-energy hydrogen species |
US20080083701A1 (en) * | 2006-10-04 | 2008-04-10 | Mks Instruments, Inc. | Oxygen conditioning of plasma vessels |
US20090017258A1 (en) * | 2007-07-10 | 2009-01-15 | Carlisle John A | Diamond film deposition |
WO2009051597A1 (en) * | 2007-10-19 | 2009-04-23 | Mks Instruments, Inc. | Toroidal plasma chamber for high gas flow rate process |
KR20100106608A (ko) * | 2008-01-31 | 2010-10-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 폐쇄 회로 mocvd 증착 제어 |
DE102008031092A1 (de) * | 2008-07-01 | 2010-01-07 | Linde Aktiengesellschaft | Verfahren und Vorrichtung zur Erzeugung von Wasserstoff |
US8460464B2 (en) * | 2009-03-31 | 2013-06-11 | Rajneesh Bhandari | Method for producing single crystalline diamonds |
US20100310766A1 (en) | 2009-06-07 | 2010-12-09 | Veeco Compound Semiconductor, Inc. | Roll-to-Roll Chemical Vapor Deposition System |
JP2013503430A (ja) * | 2009-08-27 | 2013-01-31 | モザイク・クリスタルズ・リミテッド | 高真空チャンバー用貫通型プラズマ発生装置 |
KR101170926B1 (ko) * | 2010-09-01 | 2012-08-03 | (주) 엔피홀딩스 | 플라즈마 방전을 위한 점화 장치가 장착된 플라즈마 반응기 |
KR20120064867A (ko) * | 2010-12-10 | 2012-06-20 | 주식회사 플라즈마트 | 플라즈마 발생 장치 |
GB201021865D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
US20140062285A1 (en) * | 2012-08-29 | 2014-03-06 | Mks Instruments, Inc. | Method and Apparatus for a Large Area Inductive Plasma Source |
JP6417390B2 (ja) * | 2013-03-15 | 2018-11-07 | プラズマビリティー, エルエルシー | Cvdプラズマ処理の方法 |
US20190006154A1 (en) * | 2017-06-28 | 2019-01-03 | Chaolin Hu | Toroidal Plasma Chamber |
US10505348B2 (en) * | 2017-09-15 | 2019-12-10 | Mks Instruments, Inc. | Apparatus and method for ignition of a plasma system and for monitoring health of the plasma system |
-
2014
- 2014-03-14 JP JP2016502655A patent/JP6417390B2/ja active Active
- 2014-03-14 SG SG10201900327YA patent/SG10201900327YA/en unknown
- 2014-03-14 CN CN201480014623.2A patent/CN105144849B/zh active Active
- 2014-03-14 KR KR1020157025382A patent/KR102003106B1/ko active IP Right Grant
- 2014-03-14 US US14/212,073 patent/US20140272108A1/en not_active Abandoned
- 2014-03-14 EP EP14763433.1A patent/EP2974558A4/en not_active Withdrawn
- 2014-03-14 MY MYPI2015702754A patent/MY187052A/en unknown
- 2014-03-14 WO PCT/US2014/027881 patent/WO2014143775A1/en active Application Filing
- 2014-03-14 SG SG11201506564RA patent/SG11201506564RA/en unknown
- 2014-03-14 SG SG10201708625XA patent/SG10201708625XA/en unknown
-
2017
- 2017-04-18 US US15/489,979 patent/US9909215B2/en active Active
-
2018
- 2018-01-22 US US15/876,706 patent/US20180155839A1/en not_active Abandoned
- 2018-10-05 JP JP2018190079A patent/JP2019046805A/ja active Pending
Also Published As
Publication number | Publication date |
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MY187052A (en) | 2021-08-27 |
SG11201506564RA (en) | 2015-09-29 |
KR20150131051A (ko) | 2015-11-24 |
EP2974558A1 (en) | 2016-01-20 |
US20170298513A1 (en) | 2017-10-19 |
SG10201900327YA (en) | 2019-02-27 |
JP2016520950A (ja) | 2016-07-14 |
CN105144849A (zh) | 2015-12-09 |
KR102003106B1 (ko) | 2019-07-23 |
JP6417390B2 (ja) | 2018-11-07 |
US20140272108A1 (en) | 2014-09-18 |
JP2019046805A (ja) | 2019-03-22 |
US9909215B2 (en) | 2018-03-06 |
CN105144849B (zh) | 2019-06-18 |
US20180155839A1 (en) | 2018-06-07 |
EP2974558A4 (en) | 2016-08-10 |
WO2014143775A1 (en) | 2014-09-18 |
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