SG10201705932QA - Semiconductor device with protective structurearound semiconductor die for localized planarization of insulatinglayer - Google Patents
Semiconductor device with protective structurearound semiconductor die for localized planarization of insulatinglayerInfo
- Publication number
- SG10201705932QA SG10201705932QA SG10201705932QA SG10201705932QA SG10201705932QA SG 10201705932Q A SG10201705932Q A SG 10201705932QA SG 10201705932Q A SG10201705932Q A SG 10201705932QA SG 10201705932Q A SG10201705932Q A SG 10201705932QA SG 10201705932Q A SG10201705932Q A SG 10201705932QA
- Authority
- SG
- Singapore
- Prior art keywords
- structurearound
- insulatinglayer
- protective
- semiconductor device
- semiconductor
- Prior art date
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US12/891,232 US8642446B2 (en) | 2010-09-27 | 2010-09-27 | Semiconductor device and method of forming protective structure around semiconductor die for localized planarization of insulating layer |
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SG10201705932QA true SG10201705932QA (en) | 2017-08-30 |
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SG10201705932QA SG10201705932QA (en) | 2010-09-27 | 2011-09-08 | Semiconductor device with protective structurearound semiconductor die for localized planarization of insulatinglayer |
SG2011064599A SG179366A1 (en) | 2010-09-27 | 2011-09-08 | Semiconductor device and method of forming protective structure around semiconductor die for localized planarization of insulating layer |
SG2014010292A SG2014010292A (en) | 2010-09-27 | 2011-09-08 | Semiconductor device with protective structurearound semiconductor die for localized planarization of insulatinglayer |
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SG2011064599A SG179366A1 (en) | 2010-09-27 | 2011-09-08 | Semiconductor device and method of forming protective structure around semiconductor die for localized planarization of insulating layer |
SG2014010292A SG2014010292A (en) | 2010-09-27 | 2011-09-08 | Semiconductor device with protective structurearound semiconductor die for localized planarization of insulatinglayer |
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CN (1) | CN102420147B (en) |
SG (3) | SG10201705932QA (en) |
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US8659123B2 (en) * | 2011-09-28 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal pad structures in dies |
US8685761B2 (en) * | 2012-02-02 | 2014-04-01 | Harris Corporation | Method for making a redistributed electronic device using a transferrable redistribution layer |
US9257412B2 (en) * | 2012-09-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress reduction apparatus |
US9224688B2 (en) * | 2013-01-04 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal routing architecture for integrated circuits |
TWI515903B (en) | 2013-09-30 | 2016-01-01 | 台達電子工業股份有限公司 | Semiconductor device |
US9502270B2 (en) * | 2014-07-08 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device packages, packaging methods, and packaged semiconductor devices |
JP2016111285A (en) * | 2014-12-10 | 2016-06-20 | 株式会社東芝 | Semiconductor device |
KR20160083408A (en) | 2014-12-31 | 2016-07-12 | 삼성전자주식회사 | Fuse package and light emitting device module using the same |
CN108140576A (en) * | 2015-10-01 | 2018-06-08 | 瑞萨电子株式会社 | Semiconductor devices and its manufacturing method |
US11063003B2 (en) * | 2018-10-02 | 2021-07-13 | Nanya Technology Corporation | Semiconductor device with diced semiconductor chips and method for manufacturing the same |
KR20220090664A (en) * | 2020-12-22 | 2022-06-30 | 삼성전자주식회사 | Strip substrate and Semiconductor package |
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US3421204A (en) | 1967-05-03 | 1969-01-14 | Sylvania Electric Prod | Method of producing semiconductor devices |
US4651409A (en) * | 1984-02-09 | 1987-03-24 | Ncr Corporation | Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor |
KR100190927B1 (en) * | 1996-07-18 | 1999-06-01 | 윤종용 | Semiconductor chip apparatus having metal film with slit |
JPH10154670A (en) * | 1996-11-26 | 1998-06-09 | Toshiba Corp | Manufacture of semiconductor device |
US6235551B1 (en) * | 1997-12-31 | 2001-05-22 | Micron Technology, Inc. | Semiconductor device including edge bond pads and methods |
US6008070A (en) * | 1998-05-21 | 1999-12-28 | Micron Technology, Inc. | Wafer level fabrication and assembly of chip scale packages |
US6432752B1 (en) * | 2000-08-17 | 2002-08-13 | Micron Technology, Inc. | Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages |
US6762502B1 (en) * | 2000-08-31 | 2004-07-13 | Micron Technology, Inc. | Semiconductor device packages including a plurality of layers substantially encapsulating leads thereof |
US7340181B1 (en) | 2002-05-13 | 2008-03-04 | National Semiconductor Corporation | Electrical die contact structure and fabrication method |
TWI241702B (en) | 2003-07-28 | 2005-10-11 | Siliconware Precision Industries Co Ltd | Ground pad structure for preventing solder extrusion and semiconductor package having the ground pad structure |
KR101249555B1 (en) * | 2003-11-10 | 2013-04-01 | 스태츠 칩팩, 엘티디. | Bump-on-lead flip chip interconnection |
US8026128B2 (en) * | 2004-11-10 | 2011-09-27 | Stats Chippac, Ltd. | Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask |
US7235867B1 (en) * | 2004-11-01 | 2007-06-26 | Advanced Micro Devices, Inc. | Semiconductor device with electrically biased die edge seal |
JP5427337B2 (en) | 2005-12-21 | 2014-02-26 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | Semiconductor device, method for manufacturing the same, and camera module |
US8193639B2 (en) * | 2010-03-30 | 2012-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy metal design for packaging structures |
US9202713B2 (en) * | 2010-07-26 | 2015-12-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming RDL over contact pad with high alignment tolerance or reduced interconnect pitch |
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