SG10201703293YA - Method and apparatus for removing photoresist - Google Patents
Method and apparatus for removing photoresistInfo
- Publication number
- SG10201703293YA SG10201703293YA SG10201703293YA SG10201703293YA SG10201703293YA SG 10201703293Y A SG10201703293Y A SG 10201703293YA SG 10201703293Y A SG10201703293Y A SG 10201703293YA SG 10201703293Y A SG10201703293Y A SG 10201703293YA SG 10201703293Y A SG10201703293Y A SG 10201703293YA
- Authority
- SG
- Singapore
- Prior art keywords
- removing photoresist
- photoresist
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/257,216 US8043434B2 (en) | 2008-10-23 | 2008-10-23 | Method and apparatus for removing photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201703293YA true SG10201703293YA (en) | 2017-06-29 |
Family
ID=42116303
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201703293YA SG10201703293YA (en) | 2008-10-23 | 2009-10-08 | Method and apparatus for removing photoresist |
SG2013079249A SG195603A1 (en) | 2008-10-23 | 2009-10-08 | Method and apparatus for removing photoresist |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013079249A SG195603A1 (en) | 2008-10-23 | 2009-10-08 | Method and apparatus for removing photoresist |
Country Status (7)
Country | Link |
---|---|
US (2) | US8043434B2 (en) |
JP (1) | JP5710489B2 (en) |
KR (1) | KR101660063B1 (en) |
CN (1) | CN102187438B (en) |
SG (2) | SG10201703293YA (en) |
TW (1) | TWI476545B (en) |
WO (1) | WO2010047970A2 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5728482B2 (en) * | 2009-09-25 | 2015-06-03 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Method and apparatus for high efficiency gas dissociation in an inductively coupled plasma reactor |
US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
TWI563552B (en) * | 2011-04-28 | 2016-12-21 | Lam Res Corp | Substantially non-oxidizing plasma treatment devices and processes |
US10225919B2 (en) * | 2011-06-30 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | Projected plasma source |
US9095038B2 (en) * | 2011-10-19 | 2015-07-28 | Advanced Micro-Fabrication Equipment, Inc. Asia | ICP source design for plasma uniformity and efficiency enhancement |
US9293305B2 (en) | 2011-10-31 | 2016-03-22 | Lam Research Corporation | Mixed acid cleaning assemblies |
KR101886740B1 (en) * | 2011-11-01 | 2018-09-11 | 삼성디스플레이 주식회사 | Vapor deposition apparatus and method for manufacturing organic light emitting display apparatus |
JP6082391B2 (en) * | 2012-05-23 | 2017-02-15 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
JP2014049529A (en) * | 2012-08-30 | 2014-03-17 | Tokyo Electron Ltd | Plasma processing apparatus and method of cleaning oxide film of metal |
US20140166618A1 (en) * | 2012-12-14 | 2014-06-19 | The Penn State Research Foundation | Ultra-high speed anisotropic reactive ion etching |
WO2014161199A1 (en) * | 2013-04-03 | 2014-10-09 | Wang Dongjun | Plasma enhanced atomic layer deposition device |
US10217627B2 (en) * | 2013-10-03 | 2019-02-26 | Applied Materials, Inc. | Methods of non-destructive post tungsten etch residue removal |
US20150187563A1 (en) * | 2013-12-26 | 2015-07-02 | Applied Materials, Inc. | Photo-assisted deposition of flowable films |
US9599896B2 (en) * | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
JP6567646B2 (en) * | 2015-02-25 | 2019-08-28 | 国立大学法人大阪大学 | Microwave plasma gas phase reactor |
US10475626B2 (en) * | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
KR20180085088A (en) * | 2017-01-16 | 2018-07-26 | 삼성디스플레이 주식회사 | Photoresist stripping apparatus, methods of stripping photoresist and forming thin film pattern using the same |
US10840068B2 (en) * | 2017-02-15 | 2020-11-17 | Yield Engineering Systems, Inc. | Plasma spreading apparatus and method of spreading plasma in process ovens |
GB2564893B (en) * | 2017-07-27 | 2020-12-16 | Semsysco Gmbh | Distribution system for chemical and/or electrolytic surface treatment |
US11094511B2 (en) | 2018-11-13 | 2021-08-17 | Applied Materials, Inc. | Processing chamber with substrate edge enhancement processing |
KR102315708B1 (en) * | 2018-12-11 | 2021-10-21 | 주식회사 아이에스케이 | A Vapor Supplying Type of a Photoresist Striper and a Method for Cleaning a Photoresist by the Same |
CN112074071B (en) * | 2020-10-05 | 2024-06-18 | 四川大学 | High-power plasma generating device of multipath microwave source |
CN112259474A (en) * | 2020-10-19 | 2021-01-22 | 上海华力集成电路制造有限公司 | Plasma source assembly for integrated circuit processing equipment |
CN114460818A (en) * | 2020-11-09 | 2022-05-10 | 长鑫存储技术有限公司 | Photoresist removing method and device |
JP7312160B2 (en) * | 2020-12-28 | 2023-07-20 | 株式会社アルバック | Etching apparatus and etching method |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3198667B2 (en) * | 1992-10-22 | 2001-08-13 | ソニー株式会社 | How to remove resist |
JPH08124909A (en) * | 1994-10-26 | 1996-05-17 | Fujitsu Ltd | Method and system ashing resist |
JP2845163B2 (en) * | 1994-10-27 | 1999-01-13 | 日本電気株式会社 | Plasma processing method and apparatus |
JP3574558B2 (en) * | 1998-01-23 | 2004-10-06 | 東京応化工業株式会社 | Plasma processing equipment |
US6231775B1 (en) * | 1998-01-28 | 2001-05-15 | Anon, Inc. | Process for ashing organic materials from substrates |
EP1074043A4 (en) * | 1998-01-28 | 2002-11-06 | Anon Inc | Process for ashing organic materials from substrates |
US6203657B1 (en) * | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US20050022839A1 (en) * | 1999-10-20 | 2005-02-03 | Savas Stephen E. | Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing |
US7294563B2 (en) * | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
US6645677B1 (en) * | 2000-09-18 | 2003-11-11 | Micronic Laser Systems Ab | Dual layer reticle blank and manufacturing process |
US6991739B2 (en) * | 2001-10-15 | 2006-01-31 | Applied Materials, Inc. | Method of photoresist removal in the presence of a dielectric layer having a low k-value |
US6777173B2 (en) * | 2002-08-30 | 2004-08-17 | Lam Research Corporation | H2O vapor as a processing gas for crust, resist, and residue removal for post ion implant resist strip |
US20040154743A1 (en) * | 2002-11-29 | 2004-08-12 | Savas Stephen E. | Apparatus and method for low temperature stripping of photoresist and residues |
JP2005064120A (en) * | 2003-08-08 | 2005-03-10 | Shibaura Mechatronics Corp | Apparatus and method for plasma treatment |
US20070193602A1 (en) * | 2004-07-12 | 2007-08-23 | Savas Stephen E | Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing |
US20060231207A1 (en) * | 2005-03-31 | 2006-10-19 | Rebinsky Douglas A | System and method for surface treatment |
US8298336B2 (en) * | 2005-04-01 | 2012-10-30 | Lam Research Corporation | High strip rate downstream chamber |
WO2007075509A2 (en) * | 2005-12-23 | 2007-07-05 | Mks Instruments, Inc. | Methods and apparatus for downstream dissociation of gases |
US7605063B2 (en) * | 2006-05-10 | 2009-10-20 | Lam Research Corporation | Photoresist stripping chamber and methods of etching photoresist on substrates |
KR101501426B1 (en) * | 2006-06-02 | 2015-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas flow control by differential pressure measurements |
US7476291B2 (en) * | 2006-09-28 | 2009-01-13 | Lam Research Corporation | High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation |
CN101153396B (en) * | 2006-09-30 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Plasma etching method |
WO2008073906A2 (en) * | 2006-12-11 | 2008-06-19 | Applied Materials, Inc. | Dry photoresist stripping process and apparatus |
US7552736B2 (en) * | 2007-01-30 | 2009-06-30 | Applied Materials, Inc. | Process for wafer backside polymer removal with a ring of plasma under the wafer |
-
2008
- 2008-10-23 US US12/257,216 patent/US8043434B2/en not_active Expired - Fee Related
-
2009
- 2009-10-08 SG SG10201703293YA patent/SG10201703293YA/en unknown
- 2009-10-08 JP JP2011533221A patent/JP5710489B2/en active Active
- 2009-10-08 CN CN2009801413189A patent/CN102187438B/en active Active
- 2009-10-08 KR KR1020117009310A patent/KR101660063B1/en active IP Right Grant
- 2009-10-08 WO PCT/US2009/060066 patent/WO2010047970A2/en active Application Filing
- 2009-10-08 SG SG2013079249A patent/SG195603A1/en unknown
- 2009-10-23 TW TW098135957A patent/TWI476545B/en active
-
2011
- 2011-09-22 US US13/241,087 patent/US8757178B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120006486A1 (en) | 2012-01-12 |
US20100101603A1 (en) | 2010-04-29 |
TW201022863A (en) | 2010-06-16 |
WO2010047970A2 (en) | 2010-04-29 |
CN102187438A (en) | 2011-09-14 |
KR20110074756A (en) | 2011-07-01 |
WO2010047970A3 (en) | 2010-07-22 |
US8043434B2 (en) | 2011-10-25 |
JP5710489B2 (en) | 2015-04-30 |
SG195603A1 (en) | 2013-12-30 |
CN102187438B (en) | 2013-06-12 |
US8757178B2 (en) | 2014-06-24 |
JP2012507143A (en) | 2012-03-22 |
KR101660063B1 (en) | 2016-09-26 |
TWI476545B (en) | 2015-03-11 |
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