SG10201700727YA - Methods and apparatus for delivering process gases to a substrate - Google Patents

Methods and apparatus for delivering process gases to a substrate

Info

Publication number
SG10201700727YA
SG10201700727YA SG10201700727YA SG10201700727YA SG10201700727YA SG 10201700727Y A SG10201700727Y A SG 10201700727YA SG 10201700727Y A SG10201700727Y A SG 10201700727YA SG 10201700727Y A SG10201700727Y A SG 10201700727YA SG 10201700727Y A SG10201700727Y A SG 10201700727YA
Authority
SG
Singapore
Prior art keywords
substrate
methods
process gases
delivering process
delivering
Prior art date
Application number
SG10201700727YA
Inventor
Joseph M Ranish
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201700727YA publication Critical patent/SG10201700727YA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/001—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work incorporating means for heating or cooling the liquid or other fluent material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
SG10201700727YA 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate SG10201700727YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261676403P 2012-07-27 2012-07-27
US13/939,591 US10486183B2 (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate

Publications (1)

Publication Number Publication Date
SG10201700727YA true SG10201700727YA (en) 2017-02-27

Family

ID=49995147

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201700727YA SG10201700727YA (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate
SG11201500106QA SG11201500106QA (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201500106QA SG11201500106QA (en) 2012-07-27 2013-07-11 Methods and apparatus for delivering process gases to a substrate

Country Status (7)

Country Link
US (1) US10486183B2 (en)
KR (1) KR20150038406A (en)
CN (1) CN104471678B (en)
DE (1) DE112013003706T5 (en)
SG (2) SG10201700727YA (en)
TW (1) TWI600787B (en)
WO (1) WO2014018275A1 (en)

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US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
KR101440911B1 (en) * 2012-06-18 2014-09-18 주식회사 유진테크 Apparatus for depositing on substrate
US10174422B2 (en) 2012-10-25 2019-01-08 Applied Materials, Inc. Apparatus for selective gas injection and extraction
CN105981133B (en) * 2014-02-14 2019-06-28 应用材料公司 Top dome with fill assembly
KR102462931B1 (en) 2015-10-30 2022-11-04 삼성전자주식회사 Gas Supply Unit and Substrate Treating Apparatus
US10249525B2 (en) * 2016-10-03 2019-04-02 Applied Materials, Inc. Dynamic leveling process heater lift
US11532459B2 (en) * 2017-11-09 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical vapor deposition apparatus with cleaning gas flow guiding member
US11834743B2 (en) * 2018-09-14 2023-12-05 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors
KR20210129598A (en) * 2020-04-17 2021-10-28 에이에스엠 아이피 홀딩 비.브이. Injector configured for arrangement within a reactor of a vertical furnace and vertical furnace

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KR0170391B1 (en) * 1989-06-16 1999-03-30 다카시마 히로시 Processing apparatus with a gas distributor having back and forth parallel movement relative to a workpiece support
US5728253A (en) * 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
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US8815014B2 (en) * 2005-11-18 2014-08-26 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
KR100849366B1 (en) 2006-08-24 2008-07-31 세메스 주식회사 Apparatus and method for treating substrate
US20080066738A1 (en) * 2006-09-19 2008-03-20 Landis Harry M Double-walled solar heater apparatus and method for use
JP5090089B2 (en) 2006-10-19 2012-12-05 大日本スクリーン製造株式会社 Substrate processing equipment
KR100842745B1 (en) * 2006-11-30 2008-07-01 주식회사 하이닉스반도체 Apparatus and methods of plasma processing by using scan injectors
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Also Published As

Publication number Publication date
TWI600787B (en) 2017-10-01
SG11201500106QA (en) 2015-03-30
CN104471678B (en) 2018-06-29
DE112013003706T5 (en) 2015-04-09
US20140030433A1 (en) 2014-01-30
TW201406989A (en) 2014-02-16
US10486183B2 (en) 2019-11-26
KR20150038406A (en) 2015-04-08
WO2014018275A1 (en) 2014-01-30
CN104471678A (en) 2015-03-25

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