SG10201605769RA - Masking methods for ald processes for electrode-based devices - Google Patents

Masking methods for ald processes for electrode-based devices

Info

Publication number
SG10201605769RA
SG10201605769RA SG10201605769RA SG10201605769RA SG10201605769RA SG 10201605769R A SG10201605769R A SG 10201605769RA SG 10201605769R A SG10201605769R A SG 10201605769RA SG 10201605769R A SG10201605769R A SG 10201605769RA SG 10201605769R A SG10201605769R A SG 10201605769RA
Authority
SG
Singapore
Prior art keywords
electrode
based devices
ald processes
masking methods
masking
Prior art date
Application number
SG10201605769RA
Inventor
Bhatia Ritwik
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201605769RA publication Critical patent/SG10201605769RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/07—Dielectric layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/0347—Manufacturing methods using a lift-off mask
    • H01L2224/03472—Profile of the lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1205—Capacitor
SG10201605769RA 2015-07-20 2016-07-14 Masking methods for ald processes for electrode-based devices SG10201605769RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201562194426P 2015-07-20 2015-07-20

Publications (1)

Publication Number Publication Date
SG10201605769RA true SG10201605769RA (en) 2017-02-27

Family

ID=57836287

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201605769RA SG10201605769RA (en) 2015-07-20 2016-07-14 Masking methods for ald processes for electrode-based devices

Country Status (6)

Country Link
US (1) US9633850B2 (en)
JP (1) JP6259023B2 (en)
KR (1) KR20170010718A (en)
CN (1) CN106373872A (en)
SG (1) SG10201605769RA (en)
TW (1) TWI588873B (en)

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US6924172B2 (en) * 2003-08-26 2005-08-02 Freescale Semiconductor, Inc. Method of forming a bond pad
TWI220310B (en) * 2003-09-29 2004-08-11 Phoenix Prec Technology Corp Method for forming presolder structure on semiconductor package substrate
TWI231028B (en) * 2004-05-21 2005-04-11 Via Tech Inc A substrate used for fine-pitch semiconductor package and a method of the same
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WO2007058854A2 (en) * 2005-11-10 2007-05-24 International Rectifier Corporation Semiconductor package including a semiconductor die having redistributed pads
TWI334207B (en) * 2006-06-01 2010-12-01 Unimicron Technology Corp Method for fabricating alloy conductive bump of electrical connecting pad of circuit board
US7867907B2 (en) * 2006-10-17 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8314500B2 (en) 2006-12-28 2012-11-20 Ultratech, Inc. Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers
US20090159119A1 (en) 2007-03-28 2009-06-25 Basol Bulent M Technique and apparatus for manufacturing flexible and moisture resistive photovoltaic modules
US7939932B2 (en) 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
TWI493598B (en) * 2007-10-26 2015-07-21 Applied Materials Inc Frequency doubling using a photo-resist template mask
KR101225642B1 (en) * 2007-11-15 2013-01-24 삼성전자주식회사 Method for formation of contact plug of semiconductor device using Ｈ2 remote plasma treatment
US7846644B2 (en) 2007-11-20 2010-12-07 Eastman Kodak Company Photopatternable deposition inhibitor containing siloxane
JP5023999B2 (en) * 2007-11-30 2012-09-12 Ｔｄｋ株式会社 Thin film capacitor and manufacturing method thereof
US20100164083A1 (en) 2008-12-29 2010-07-01 Numonyx B.V. Protective thin film coating in chip packaging
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Also Published As

Publication number Publication date
TW201715575A (en) 2017-05-01
US20170025272A1 (en) 2017-01-26
JP2017028270A (en) 2017-02-02
JP6259023B2 (en) 2018-01-10
CN106373872A (en) 2017-02-01
US9633850B2 (en) 2017-04-25
TWI588873B (en) 2017-06-21
KR20170010718A (en) 2017-02-01

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