SG10201507900QA - Method of and apparatus for multiple-channel pulse gas delivery system - Google Patents

Method of and apparatus for multiple-channel pulse gas delivery system

Info

Publication number
SG10201507900QA
SG10201507900QA SG10201507900QA SG10201507900QA SG10201507900QA SG 10201507900Q A SG10201507900Q A SG 10201507900QA SG 10201507900Q A SG10201507900Q A SG 10201507900QA SG 10201507900Q A SG10201507900Q A SG 10201507900QA SG 10201507900Q A SG10201507900Q A SG 10201507900QA
Authority
SG
Singapore
Prior art keywords
delivery system
gas delivery
channel pulse
pulse gas
channel
Prior art date
Application number
SG10201507900QA
Inventor
Junhua Ding
Scott Benedict
Jaroslaw Pisera
Original Assignee
Mks Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/893,554 external-priority patent/US8997686B2/en
Application filed by Mks Instr Inc filed Critical Mks Instr Inc
Publication of SG10201507900QA publication Critical patent/SG10201507900QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557Pulsed pressure or control pressure
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0676Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on flow sources
    • G05D7/0682Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on flow sources using a plurality of flow sources
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00Control of flow
    • G05D7/06Control of flow characterised by the use of electric means
    • G05D7/0617Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0623Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the set value given to the control element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
SG10201507900QA 2010-09-29 2011-09-28 Method of and apparatus for multiple-channel pulse gas delivery system SG10201507900QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/893,554 US8997686B2 (en) 2010-09-29 2010-09-29 System for and method of fast pulse gas delivery
US13/035,534 US9348339B2 (en) 2010-09-29 2011-02-25 Method and apparatus for multiple-channel pulse gas delivery system

Publications (1)

Publication Number Publication Date
SG10201507900QA true SG10201507900QA (en) 2015-10-29

Family

ID=44863209

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201507900QA SG10201507900QA (en) 2010-09-29 2011-09-28 Method of and apparatus for multiple-channel pulse gas delivery system
SG2013022280A SG189097A1 (en) 2010-09-29 2011-09-28 Method of and apparatus for multiple-channel pulse gas delivery system

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013022280A SG189097A1 (en) 2010-09-29 2011-09-28 Method of and apparatus for multiple-channel pulse gas delivery system

Country Status (9)

Country Link
US (1) US9348339B2 (en)
JP (1) JP5903436B2 (en)
KR (4) KR20180121692A (en)
CN (1) CN103221575B (en)
DE (1) DE112011103337T5 (en)
GB (1) GB2501003B (en)
SG (2) SG10201507900QA (en)
TW (1) TWI509100B (en)
WO (1) WO2012050866A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9348339B2 (en) 2010-09-29 2016-05-24 Mks Instruments, Inc. Method and apparatus for multiple-channel pulse gas delivery system
US8997686B2 (en) 2010-09-29 2015-04-07 Mks Instruments, Inc. System for and method of fast pulse gas delivery
US10353408B2 (en) 2011-02-25 2019-07-16 Mks Instruments, Inc. System for and method of fast pulse gas delivery
US10031531B2 (en) * 2011-02-25 2018-07-24 Mks Instruments, Inc. System for and method of multiple channel fast pulse gas delivery
US10126760B2 (en) 2011-02-25 2018-11-13 Mks Instruments, Inc. System for and method of fast pulse gas delivery
US9223319B2 (en) * 2012-12-21 2015-12-29 Intermolecular, Inc. High dilution ratio by successively preparing and diluting chemicals
JP6107327B2 (en) * 2013-03-29 2017-04-05 東京エレクトロン株式会社 Film forming apparatus, gas supply apparatus, and film forming method
CN107447202B (en) * 2015-11-11 2019-05-14 南通大学 Prepare the gas pulses sequence of gallium aluminium acid bismuth thin film
JP6366021B2 (en) * 2015-12-24 2018-08-01 パナソニックIpマネジメント株式会社 Flow measuring device
US10649471B2 (en) 2018-02-02 2020-05-12 Mks Instruments, Inc. Method and apparatus for pulse gas delivery with isolation valves
US10698426B2 (en) 2018-05-07 2020-06-30 Mks Instruments, Inc. Methods and apparatus for multiple channel mass flow and ratio control systems
JP7369456B2 (en) * 2018-06-26 2023-10-26 株式会社フジキン Flow control method and flow control device
US10725484B2 (en) 2018-09-07 2020-07-28 Mks Instruments, Inc. Method and apparatus for pulse gas delivery using an external pressure trigger
JP7122335B2 (en) * 2020-03-30 2022-08-19 Ckd株式会社 Pulse shot type flow control device, pulse shot type flow control method, and program
US11772958B2 (en) * 2020-09-17 2023-10-03 Applied Materials, Inc. Mass flow control based on micro-electromechanical devices
GB2615414A (en) * 2022-12-22 2023-08-09 Anaero Tech Limited Fluid flow control device

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61229319A (en) 1985-04-03 1986-10-13 Hitachi Ltd Thin film forming method
JPS62273714A (en) 1986-05-21 1987-11-27 Clarion Co Ltd Method and apparatus for supplying organic metal gas
NL8702096A (en) 1987-09-04 1989-04-03 Stichting Katholieke Univ METHOD AND APPARATUS FOR MIXING GASES AND EPITACTICALLY MANUFACTURING SEMICONDUCTOR PRODUCTS USING A GAS MIXTURE
US5565038A (en) 1991-05-16 1996-10-15 Intel Corporation Interhalogen cleaning of process equipment
JPH0645256A (en) 1992-07-21 1994-02-18 Rikagaku Kenkyusho Method for supplying gas pulse and method forming for film using the same
US5660207A (en) 1994-12-29 1997-08-26 Tylan General, Inc. Flow controller, parts of flow controller, and related method
US5524084A (en) * 1994-12-30 1996-06-04 Hewlett-Packard Company Method and apparatus for improved flow and pressure measurement and control
US5865205A (en) 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
US6000830A (en) 1997-04-18 1999-12-14 Tokyo Electron Limited System for applying recipe of semiconductor manufacturing apparatus
US6269279B1 (en) 1997-06-20 2001-07-31 Tokyo Electron Limited Control system
JP3932389B2 (en) 1998-01-19 2007-06-20 Smc株式会社 Mass flow controller self-diagnosis method
JPH11212653A (en) 1998-01-21 1999-08-06 Fujikin Inc Fluid supplier
JP4708516B2 (en) * 1998-06-01 2011-06-22 財団法人国際科学振興財団 Semiconductor or liquid crystal manufacturing apparatus and liquid material gas vaporization method
JP2000012464A (en) 1998-06-23 2000-01-14 Kokusai Electric Co Ltd Controller of processor
EP2028577A2 (en) 1999-04-16 2009-02-25 Fujikin Incorporated Parallel bypass type fluid feeding device, and method and device for controlling fluid variable type pressure system flow rate used for the device
JP2000306884A (en) 1999-04-22 2000-11-02 Mitsubishi Electric Corp Apparatus and method for plasma treatment
US6119710A (en) 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
US6089537A (en) * 1999-06-23 2000-07-18 Mks Instruments, Inc. Pendulum valve assembly
US6389364B1 (en) 1999-07-10 2002-05-14 Mykrolis Corporation System and method for a digital mass flow controller
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
KR100444149B1 (en) 2000-07-22 2004-08-09 주식회사 아이피에스 ALD thin film depositin equipment cleaning method
US6631334B2 (en) 2000-12-26 2003-10-07 Mks Instruments, Inc. Pressure-based mass flow controller system
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6701066B2 (en) 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
KR100878577B1 (en) 2001-10-18 2009-01-15 씨케이디 가부시키 가이샤 Pulse shot flow regulator and pulse shot flow regulating method
US6766260B2 (en) 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
CN101818334B (en) 2002-01-17 2012-12-12 松德沃技术公司 ALD apparatus and method
US20040050326A1 (en) 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
WO2005003406A2 (en) 2003-06-27 2005-01-13 Sundew Technologies, Llc Apparatus and method for chemical source vapor pressure control
JP4285184B2 (en) * 2003-10-14 2009-06-24 東京エレクトロン株式会社 Film forming method and film forming apparatus
KR100589053B1 (en) 2003-10-15 2006-06-12 삼성전자주식회사 Source supply apparatus, method of supplying source, and atomic layer deposition method using the same
US20050103264A1 (en) 2003-11-13 2005-05-19 Frank Jansen Atomic layer deposition process and apparatus
US7437944B2 (en) 2003-12-04 2008-10-21 Applied Materials, Inc. Method and apparatus for pressure and mix ratio control
DE102004015174A1 (en) 2004-03-27 2005-10-13 Aixtron Ag Process for separating in particular metal oxides by means of non-continuous precursor injection
US20060207503A1 (en) 2005-03-18 2006-09-21 Paul Meneghini Vaporizer and method of vaporizing a liquid for thin film delivery
US7628861B2 (en) 2004-12-17 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US20060060139A1 (en) 2004-04-12 2006-03-23 Mks Instruments, Inc. Precursor gas delivery with carrier gas mixing
JP2005322668A (en) 2004-05-06 2005-11-17 Renesas Technology Corp Film deposition equipment and film deposition method
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
JP3945519B2 (en) 2004-06-21 2007-07-18 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method and storage medium for object to be processed
JP4595702B2 (en) * 2004-07-15 2010-12-08 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
KR100590570B1 (en) 2004-11-30 2006-06-19 삼성전자주식회사 Method and apparatus for detecting a face shape using level set method
US20060130755A1 (en) 2004-12-17 2006-06-22 Clark William R Pulsed mass flow measurement system and method
JP4705789B2 (en) * 2005-02-08 2011-06-22 株式会社日立ハイテクノロジーズ Vacuum processing equipment
US7608549B2 (en) 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
US7474968B2 (en) 2005-03-25 2009-01-06 Mks Instruments, Inc. Critical flow based mass flow verifier
US7735452B2 (en) 2005-07-08 2010-06-15 Mks Instruments, Inc. Sensor for pulsed deposition monitoring and control
KR100989149B1 (en) 2006-01-27 2010-10-20 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus
JP5050369B2 (en) * 2006-03-06 2012-10-17 東京エレクトロン株式会社 Processing equipment
US7369920B2 (en) 2006-03-21 2008-05-06 Mks Instruments, Inc. Pressure control system with optimized performance
KR101161020B1 (en) 2006-03-30 2012-07-02 미쯔이 죠센 가부시키가이샤 Atomic layer growing apparatus
JP2008007838A (en) 2006-06-30 2008-01-17 Horiba Ltd Film deposition apparatus, and film deposition method
US7795143B2 (en) * 2006-08-11 2010-09-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus and manufacturing method of semiconductor device
JP5235293B2 (en) 2006-10-02 2013-07-10 東京エレクトロン株式会社 Process gas supply mechanism, process gas supply method, and gas processing apparatus
KR100835276B1 (en) 2006-10-23 2008-06-05 삼성전자주식회사 System and method for control semiconductor equipment
US7706925B2 (en) 2007-01-10 2010-04-27 Mks Instruments, Inc. Integrated pressure and flow ratio control system
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US8297223B2 (en) 2007-10-02 2012-10-30 Msp Corporation Method and apparatus for particle filtration and enhancing tool performance in film deposition
JP5082989B2 (en) 2008-03-31 2012-11-28 日立金属株式会社 Flow control device, verification method thereof, and flow control method
US7891228B2 (en) 2008-11-18 2011-02-22 Mks Instruments, Inc. Dual-mode mass flow verification and mass flow delivery system and method
US8790464B2 (en) 2010-01-19 2014-07-29 Mks Instruments, Inc. Control for and method of pulsed gas delivery
US9348339B2 (en) 2010-09-29 2016-05-24 Mks Instruments, Inc. Method and apparatus for multiple-channel pulse gas delivery system
US8997686B2 (en) 2010-09-29 2015-04-07 Mks Instruments, Inc. System for and method of fast pulse gas delivery
US10353408B2 (en) 2011-02-25 2019-07-16 Mks Instruments, Inc. System for and method of fast pulse gas delivery

Also Published As

Publication number Publication date
TWI509100B (en) 2015-11-21
US20120076935A1 (en) 2012-03-29
JP2013543540A (en) 2013-12-05
DE112011103337T5 (en) 2013-07-18
KR20130097214A (en) 2013-09-02
KR20180121692A (en) 2018-11-07
JP5903436B2 (en) 2016-04-13
SG189097A1 (en) 2013-05-31
US9348339B2 (en) 2016-05-24
CN103221575A (en) 2013-07-24
KR20190114054A (en) 2019-10-08
GB2501003A (en) 2013-10-09
KR20150074210A (en) 2015-07-01
TW201231713A (en) 2012-08-01
GB201305776D0 (en) 2013-05-15
WO2012050866A1 (en) 2012-04-19
GB2501003B (en) 2017-04-19
KR102596243B1 (en) 2023-10-31
CN103221575B (en) 2016-08-03

Similar Documents

Publication Publication Date Title
GB2501003B (en) Method of and apparatus for multiple-channel pulse gas delivery system
GB2496830B (en) System for and method of fast pulse gas delivery
IL262376A (en) Method and system for drug delivery
GB2502233B (en) System for and method of fast pulse gas delivery
GB2510291B (en) Tool apparatus system and method of use
EP2696927A4 (en) Gas delivery method and apparatus
PT3293907T (en) Method, system and apparatus of multi-subframe scheduling
ZA201207426B (en) System and apparatus for robotic device and methods of using thereof
EP2552302A4 (en) Apparatus and method for human algometry
EP2744392A4 (en) Method and system for treatment of visual impairment
IL228395A0 (en) V-trough photobioreactor system and method of use
EP2494545A4 (en) Method and apparatus for voice activity detection
PT2600930T (en) Injector apparatus and method for drug delivery
EP2725968A4 (en) Apparatus and method for recognition of patient activities
EP2704476A4 (en) Method, system and device for delivering minimization of drive-tests measurement configuration parameters
GB2489372B (en) Control for and method of pulsed gas delivery
EP2715574A4 (en) Method and apparatus of providing suggested terms
EP2741806A4 (en) Method and apparatus for the dialysis of blood
EP2745256A4 (en) Apparatus and method for determination of medication location
ZA201203839B (en) Gas delivery system and gas delivery method
PT2567183T (en) Initiation device, blasting system and method of blasting
EP2613840A4 (en) Methods and apparatus for preventing rainout
EP2558018A4 (en) System and method for microablation of tissue
ZA201209420B (en) Method and apparatus for producing gas
EP2755592A4 (en) Orthodontic apparatus and method of using the same