SG10201507682YA - A semiconductor device comprising ferroelectric elements and fast high-k metal gate transistors - Google Patents
A semiconductor device comprising ferroelectric elements and fast high-k metal gate transistorsInfo
- Publication number
- SG10201507682YA SG10201507682YA SG10201507682YA SG10201507682YA SG10201507682YA SG 10201507682Y A SG10201507682Y A SG 10201507682YA SG 10201507682Y A SG10201507682Y A SG 10201507682YA SG 10201507682Y A SG10201507682Y A SG 10201507682YA SG 10201507682Y A SG10201507682Y A SG 10201507682YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- metal gate
- gate transistors
- fast high
- ferroelectric elements
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012205977.6A DE102012205977B4 (en) | 2012-04-12 | 2012-04-12 | Semiconductor device with ferroelectric elements and fast transistors with metal gates with large ε and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201507682YA true SG10201507682YA (en) | 2015-10-29 |
Family
ID=49232175
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201507682YA SG10201507682YA (en) | 2012-04-12 | 2013-02-06 | A semiconductor device comprising ferroelectric elements and fast high-k metal gate transistors |
| SG2013009543A SG194280A1 (en) | 2012-04-12 | 2013-02-06 | A semiconductor device comprising ferroelectric elements and fast high-k metal gate transistors |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013009543A SG194280A1 (en) | 2012-04-12 | 2013-02-06 | A semiconductor device comprising ferroelectric elements and fast high-k metal gate transistors |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9349842B2 (en) |
| KR (1) | KR101486504B1 (en) |
| CN (1) | CN103378100B (en) |
| DE (1) | DE102012205977B4 (en) |
| SG (2) | SG10201507682YA (en) |
| TW (1) | TWI532177B (en) |
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| US8803253B2 (en) * | 2012-09-11 | 2014-08-12 | Texas Instruments Incorporated | Replacement metal gate process for CMOS integrated circuits |
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| US9337045B2 (en) | 2014-08-13 | 2016-05-10 | Globalfoundries Inc. | Methods of forming a semiconductor circuit element and semiconductor circuit element |
| US20160064510A1 (en) * | 2014-08-26 | 2016-03-03 | Globalfoundries Inc. | Device including a floating gate electrode and a layer of ferroelectric material and method for the formation thereof |
| US9412600B2 (en) | 2014-08-28 | 2016-08-09 | Globalfoundries Inc. | Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistor |
| DE102014217874B3 (en) * | 2014-09-08 | 2015-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | A method of fabricating a semiconductor structure, wherein a gate structure is formed with a gate dielectric material for a ferroelectric transistor |
| US20160071947A1 (en) | 2014-09-10 | 2016-03-10 | Globalfoundries Inc. | Method including a replacement of a dummy gate structure with a gate structure including a ferroelectric material |
| DE102014221371B4 (en) * | 2014-10-21 | 2018-04-19 | Globalfoundries Inc. | A method of forming a semiconductor circuit element and semiconductor circuit element |
| US9576801B2 (en) | 2014-12-01 | 2017-02-21 | Qualcomm Incorporated | High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory |
| US9620612B2 (en) * | 2015-02-19 | 2017-04-11 | Qualcomm Incorporated | Intergrated circuit devices including an interfacial dipole layer |
| TWI555066B (en) * | 2015-05-14 | 2016-10-21 | 力晶科技股份有限公司 | Method of manufacturing a semiconductor device |
| CN106684042B (en) * | 2015-11-05 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | The manufacturing method of semiconductor structure |
| DE102017200678B4 (en) | 2016-01-19 | 2019-06-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing a microelectronic circuit and corresponding microelectronic circuit |
| DE112016006684T5 (en) * | 2016-04-01 | 2018-12-13 | Intel Corporation | FERROELECTRIC FIELD EFFECT TRANSISTOR WITH THRESHOLD VOLTAGE SWITCHING FOR IMPROVED PERFORMANCE IN ONE STATE AND OUT OF STATE |
| KR102338487B1 (en) * | 2016-05-10 | 2021-12-10 | 에스케이하이닉스 주식회사 | Semiconductor device and method for manufacturing the same |
| US20170338350A1 (en) * | 2016-05-17 | 2017-11-23 | Globalfoundries Inc. | Semiconductor device and method |
| TWI690080B (en) * | 2016-06-08 | 2020-04-01 | 聯華電子股份有限公司 | Semiconductor device |
| US9793397B1 (en) | 2016-09-23 | 2017-10-17 | International Business Machines Corporation | Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor |
| US10937783B2 (en) | 2016-11-29 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10249756B2 (en) | 2016-11-29 | 2019-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereof |
| US11004868B2 (en) * | 2017-03-22 | 2021-05-11 | Intel Corporation | Memory field-effect transistors and methods of manufacturing the same |
| KR102342550B1 (en) | 2017-06-09 | 2021-12-23 | 삼성전자주식회사 | Semiconductor devices |
| TWI726128B (en) * | 2017-07-17 | 2021-05-01 | 聯華電子股份有限公司 | Semiconductor device and method for fabricating the same |
| US11114565B2 (en) * | 2017-09-29 | 2021-09-07 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device |
| US10276697B1 (en) * | 2017-10-27 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance FET with improved reliability performance |
| KR102490895B1 (en) | 2017-12-14 | 2023-01-25 | 삼성디스플레이 주식회사 | Display Apparatus and Manufacturing Method of the same |
| US10950709B2 (en) | 2018-07-06 | 2021-03-16 | Samsung Electronics Co., Ltd. | Semiconductor device |
| US11063065B2 (en) | 2018-07-06 | 2021-07-13 | Samsung Electronics Co., Ltd. | Semiconductor device having a negative capacitance using ferroelectrical material |
| DE102018212736B4 (en) * | 2018-07-31 | 2022-05-12 | Christian-Albrechts-Universität Zu Kiel | Semiconductor ferroelectric device having a mixed crystal ferroelectric memory layer and method of fabricating the same |
| US10879238B2 (en) * | 2018-07-31 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative capacitance finFET and method of fabricating thereof |
| US11469323B2 (en) | 2018-09-25 | 2022-10-11 | Intel Corporation | Ferroelectric gate stack for band-to-band tunneling reduction |
| KR20200072985A (en) * | 2018-12-13 | 2020-06-23 | 삼성전자주식회사 | An integrated circuit including a plurality of transistors and a method of manufacturing the same |
| CN109980014B (en) * | 2019-03-26 | 2023-04-18 | 湘潭大学 | Back-grid ferroelectric grid field effect transistor and preparation method thereof |
| CN110010691B (en) * | 2019-04-11 | 2022-07-12 | 中国科学院微电子研究所 | Negative capacitance field effect transistor and preparation method thereof |
| TWI696273B (en) | 2019-05-15 | 2020-06-11 | 力晶積成電子製造股份有限公司 | Flash memory with assistant gate and method of fabricating the same |
| KR20210014017A (en) | 2019-07-29 | 2021-02-08 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
| US11227933B2 (en) * | 2020-03-31 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company Limited | Ferroelectric field effect transistor using charge trapping band misalignment and methods of forming the same |
| US20210384202A1 (en) * | 2020-06-04 | 2021-12-09 | Nanya Technology Corporation | Semiconductor structure and method of forming the same |
| US20210399137A1 (en) * | 2020-06-23 | 2021-12-23 | Taiwan Semiconductor Manufacturing Company Limited | Interfacial dual passivation layer for a ferroelectric device and methods of forming the same |
| JP2022077593A (en) * | 2020-11-12 | 2022-05-24 | ルネサスエレクトロニクス株式会社 | Semiconductor device and method of manufacturing the same |
| US11581334B2 (en) * | 2021-02-05 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cocktail layer over gate dielectric layer of FET FeRAM |
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| US7094284B2 (en) * | 1999-10-07 | 2006-08-22 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same |
| JP4329289B2 (en) * | 2000-12-27 | 2009-09-09 | 三菱マテリアル株式会社 | SBT ferroelectric thin film, composition for forming the same, and method for forming the same |
| KR100520633B1 (en) | 2001-06-21 | 2005-10-11 | 마츠시타 덴끼 산교 가부시키가이샤 | Semiconductor device and its manufacturing method |
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| EP2083441A1 (en) | 2008-01-23 | 2009-07-29 | Interuniversitair Microelektronica Centrum vzw | Semiconductor device and method for fabricating the same |
| US8304823B2 (en) * | 2008-04-21 | 2012-11-06 | Namlab Ggmbh | Integrated circuit including a ferroelectric memory cell and method of manufacturing the same |
| US8525263B2 (en) * | 2009-01-19 | 2013-09-03 | International Business Machines Corporation | Programmable high-k/metal gate memory device |
| DE102009021486B4 (en) | 2009-05-15 | 2013-07-04 | Globalfoundries Dresden Module One Llc & Co. Kg | Method for field effect transistor production |
| DE102009039418B4 (en) * | 2009-08-31 | 2013-08-22 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG | Adjustment of work function in high-k gate stacks containing gate dielectrics of different thickness |
| KR101634748B1 (en) * | 2009-12-08 | 2016-07-11 | 삼성전자주식회사 | method for manufacturing MOS transistor and forming method of integrated circuit using the sime |
| TWI497716B (en) | 2010-04-13 | 2015-08-21 | United Microelectronics Corp | Semiconductor device having metal gate and manufacturing methd thereof |
| JP2012049227A (en) * | 2010-08-25 | 2012-03-08 | Renesas Electronics Corp | Semiconductor integrated circuit device and semiconductor integrated circuit manufacturing method |
-
2012
- 2012-04-12 DE DE102012205977.6A patent/DE102012205977B4/en active Active
-
2013
- 2013-02-06 SG SG10201507682YA patent/SG10201507682YA/en unknown
- 2013-02-06 SG SG2013009543A patent/SG194280A1/en unknown
- 2013-02-21 TW TW102105958A patent/TWI532177B/en not_active IP Right Cessation
- 2013-03-11 US US13/793,645 patent/US9349842B2/en not_active Expired - Fee Related
- 2013-04-11 KR KR20130039993A patent/KR101486504B1/en not_active IP Right Cessation
- 2013-04-12 CN CN201310126397.4A patent/CN103378100B/en active Active
-
2016
- 2016-03-22 US US15/076,850 patent/US9564521B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| SG194280A1 (en) | 2013-11-29 |
| CN103378100A (en) | 2013-10-30 |
| KR20130116030A (en) | 2013-10-22 |
| DE102012205977A1 (en) | 2013-10-17 |
| US20160204219A1 (en) | 2016-07-14 |
| TWI532177B (en) | 2016-05-01 |
| US20130270619A1 (en) | 2013-10-17 |
| KR101486504B1 (en) | 2015-01-23 |
| CN103378100B (en) | 2016-08-31 |
| US9564521B2 (en) | 2017-02-07 |
| US9349842B2 (en) | 2016-05-24 |
| DE102012205977B4 (en) | 2017-08-17 |
| TW201344911A (en) | 2013-11-01 |
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