SG10201504185TA - Structure And Method For A SRAM Circuit - Google Patents

Structure And Method For A SRAM Circuit

Info

Publication number
SG10201504185TA
SG10201504185TA SG10201504185TA SG10201504185TA SG10201504185TA SG 10201504185T A SG10201504185T A SG 10201504185TA SG 10201504185T A SG10201504185T A SG 10201504185TA SG 10201504185T A SG10201504185T A SG 10201504185TA SG 10201504185T A SG10201504185T A SG 10201504185TA
Authority
SG
Singapore
Prior art keywords
sram circuit
sram
circuit
Prior art date
Application number
SG10201504185TA
Inventor
Liaw Jhon-Jhy
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of SG10201504185TA publication Critical patent/SG10201504185TA/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
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    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG10201504185TA 2012-03-07 2012-04-03 Structure And Method For A SRAM Circuit SG10201504185TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/414,323 US8964455B2 (en) 2010-03-10 2012-03-07 Structure and method for a SRAM circuit

Publications (1)

Publication Number Publication Date
SG10201504185TA true SG10201504185TA (en) 2015-06-29

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SG10201504185TA SG10201504185TA (en) 2012-03-07 2012-04-03 Structure And Method For A SRAM Circuit
SG2012024402A SG193673A1 (en) 2012-03-07 2012-04-03 Structure and method for a sram circuit

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SG2012024402A SG193673A1 (en) 2012-03-07 2012-04-03 Structure and method for a sram circuit

Country Status (5)

Country Link
US (3) US8964455B2 (en)
KR (1) KR101442353B1 (en)
CN (1) CN103310834B (en)
SG (2) SG10201504185TA (en)
TW (1) TWI478321B (en)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8964455B2 (en) 2010-03-10 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a SRAM circuit
US8693235B2 (en) * 2011-12-06 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for finFET SRAM arrays in integrated circuits
KR20140049356A (en) * 2012-10-17 2014-04-25 삼성전자주식회사 Semiconductor device
US8889561B2 (en) 2012-12-10 2014-11-18 Globalfoundries Inc. Double sidewall image transfer process
US9196548B2 (en) * 2012-12-28 2015-11-24 Globalfoundries Inc. Methods of using a trench salicide routing layer
US20150117110A1 (en) * 2013-10-31 2015-04-30 Zhijiong Luo Connecting storage gate memory
US9076869B1 (en) 2014-01-08 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET device and method
CN104779207A (en) * 2014-01-13 2015-07-15 中芯国际集成电路制造(上海)有限公司 Semiconductor device manufacturing method
US9257439B2 (en) * 2014-02-27 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for FinFET SRAM
CN105206577B (en) * 2014-06-10 2018-05-04 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof and electronic device
US9286952B2 (en) * 2014-06-30 2016-03-15 Lattice Semiconductor Corporation SRAM with two-level voltage regulator
US9324619B2 (en) * 2014-08-25 2016-04-26 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9406616B2 (en) * 2014-12-05 2016-08-02 Globalfoundries Inc. Merged source/drain and gate contacts in SRAM bitcell
US9859286B2 (en) * 2014-12-23 2018-01-02 International Business Machines Corporation Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices
KR102352154B1 (en) 2015-03-03 2022-01-17 삼성전자주식회사 Integrated circuit device
KR102307467B1 (en) * 2015-03-20 2021-09-29 삼성전자주식회사 Semiconductor device comprising active fin
KR102352153B1 (en) 2015-03-25 2022-01-17 삼성전자주식회사 Integrated circuit device and method for manufacturing the same
US9653346B2 (en) 2015-05-07 2017-05-16 United Microelectronics Corp. Integrated FinFET structure having a contact plug pitch larger than fin and first metal pitch
US9673145B2 (en) 2015-05-07 2017-06-06 United Microelectronics Corp. Semiconductor integrated circuit layout structure
TWI685088B (en) 2015-07-15 2020-02-11 聯華電子股份有限公司 Static random access memory unit structure and static random access memory layout structure
CN106409830B (en) * 2015-07-27 2020-05-05 联华电子股份有限公司 Semiconductor element with metal grid and manufacturing method thereof
US9837416B2 (en) * 2015-07-31 2017-12-05 Taiwan Semiconductor Manufacturing Company Ltd. Multi-threshold voltage field effect transistor and manufacturing method thereof
CN106558334B (en) * 2015-09-24 2020-08-25 中芯国际集成电路制造(上海)有限公司 SRAM memory cell, SRAM memory and control method thereof
KR102530671B1 (en) * 2015-12-31 2023-05-10 삼성전자주식회사 Method of fabricating the semiconductor device
US10998443B2 (en) 2016-04-15 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Epi block structure in semiconductor product providing high breakdown voltage
US10037400B2 (en) * 2016-06-02 2018-07-31 Marvell World Trade Ltd. Integrated circuit manufacturing process for aligning threshold voltages of transistors
US10014049B2 (en) 2016-06-22 2018-07-03 Darryl G. Walker Semiconductor devices, circuits and methods for read and/or write assist of an SRAM circuit portion based on voltage detection and/or temperature detection circuits
US10163524B2 (en) 2016-06-22 2018-12-25 Darryl G. Walker Testing a semiconductor device including a voltage detection circuit and temperature detection circuit that can be used to generate read assist and/or write assist in an SRAM circuit portion and method therefor
US9892781B2 (en) * 2016-06-30 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Cell structure for dual-port static random access memory
US9640540B1 (en) 2016-07-19 2017-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for an SRAM circuit
US10515969B2 (en) * 2016-11-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10049725B2 (en) 2016-12-08 2018-08-14 Ampere Computing Llc Write assist for memories with resistive bit lines
US9978682B1 (en) * 2017-04-13 2018-05-22 Qualcomm Incorporated Complementary metal oxide semiconductor (CMOS) standard cell circuits employing metal lines in a first metal layer used for routing, and related methods
US10319435B2 (en) * 2017-08-30 2019-06-11 Taiwan Semiconductor Manufacturing Company Limited Write assist for a memory device and methods of forming the same
US10734321B2 (en) 2017-09-28 2020-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method of manufacturing same
US10276581B1 (en) 2017-10-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit chip and manufacturing method thereof
US10714486B2 (en) * 2018-09-13 2020-07-14 Sandisk Technologies Llc Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same
US11508735B2 (en) * 2019-08-28 2022-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Cell manufacturing
US11367479B2 (en) 2019-09-30 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM structure and method
TWI755874B (en) * 2019-09-30 2022-02-21 台灣積體電路製造股份有限公司 Semiconductor device and forming method thereof
US11444072B2 (en) * 2020-02-25 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-port SRAM structure
TW202141703A (en) 2020-02-25 2021-11-01 台灣積體電路製造股份有限公司 Static random access memory cell
US20220254769A1 (en) * 2021-02-09 2022-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and manufacturing method of the same
US11587872B2 (en) * 2021-02-12 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for improving memory performance and/or logic performance
US11955171B2 (en) 2021-09-15 2024-04-09 Mavagail Technology, LLC Integrated circuit device including an SRAM portion having end power select circuits

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949696A (en) * 1997-06-30 1999-09-07 Cypress Semiconductor Corporation Differential dynamic content addressable memory and high speed network address filtering
US6157558A (en) * 1999-05-21 2000-12-05 Sandisk Corporation Content addressable memory cell and array architectures having low transistor counts
JP4313986B2 (en) * 2002-06-05 2009-08-12 パナソニック株式会社 Semiconductor integrated circuit and manufacturing method thereof
US7611943B2 (en) * 2004-10-20 2009-11-03 Texas Instruments Incorporated Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation
US7405994B2 (en) * 2005-07-29 2008-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Dual port cell structure
US7709893B2 (en) * 2007-01-31 2010-05-04 Infineon Technologies Ag Circuit layout for different performance and method
US7529117B2 (en) * 2007-03-07 2009-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Design solutions for integrated circuits with triple gate oxides
FR2932005B1 (en) * 2008-06-02 2011-04-01 Commissariat Energie Atomique INTEGRATED TRANSISTOR CIRCUIT IN THREE DIMENSIONS HAVING DYNAMICALLY ADJUSTABLE VT THRESHOLD VOLTAGE
US7829951B2 (en) * 2008-11-06 2010-11-09 Qualcomm Incorporated Method of fabricating a fin field effect transistor (FinFET) device
US8399931B2 (en) 2010-06-30 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Layout for multiple-fin SRAM cell
US8942030B2 (en) 2010-06-25 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for SRAM cell circuit
US8315084B2 (en) 2010-03-10 2012-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Fully balanced dual-port memory cell
US8964455B2 (en) 2010-03-10 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a SRAM circuit
US8212295B2 (en) 2010-06-30 2012-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. ROM cell circuit for FinFET devices
US8675397B2 (en) 2010-06-25 2014-03-18 Taiwan Semiconductor Manufacturing Company, Ltd. Cell structure for dual-port SRAM
JP5398599B2 (en) * 2010-03-10 2014-01-29 ルネサスエレクトロニクス株式会社 Semiconductor memory device and cell activation method thereof

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US20150171093A1 (en) 2015-06-18
US20130235652A1 (en) 2013-09-12
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TW201338135A (en) 2013-09-16
CN103310834A (en) 2013-09-18
KR20130102450A (en) 2013-09-17
TWI478321B (en) 2015-03-21
CN103310834B (en) 2016-02-24
US8964455B2 (en) 2015-02-24
KR101442353B1 (en) 2014-09-17
US9870815B2 (en) 2018-01-16
SG193673A1 (en) 2013-10-30

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