SG10201406938SA - Laser Spike Annealing Using Fiber Lasers - Google Patents

Laser Spike Annealing Using Fiber Lasers

Info

Publication number
SG10201406938SA
SG10201406938SA SG10201406938SA SG10201406938SA SG10201406938SA SG 10201406938S A SG10201406938S A SG 10201406938SA SG 10201406938S A SG10201406938S A SG 10201406938SA SG 10201406938S A SG10201406938S A SG 10201406938SA SG 10201406938S A SG10201406938S A SG 10201406938SA
Authority
SG
Singapore
Prior art keywords
fiber lasers
spike annealing
laser spike
laser
annealing
Prior art date
Application number
SG10201406938SA
Inventor
Anikitchev Serguei
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201406938SA publication Critical patent/SG10201406938SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0736—Shaping the laser spot into an oval shape, e.g. elliptic shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
SG10201406938SA 2013-12-24 2014-10-24 Laser Spike Annealing Using Fiber Lasers SG10201406938SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361920655P 2013-12-24 2013-12-24
US14/497,006 US9343307B2 (en) 2013-12-24 2014-09-25 Laser spike annealing using fiber lasers

Publications (1)

Publication Number Publication Date
SG10201406938SA true SG10201406938SA (en) 2015-07-30

Family

ID=53400816

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201406938SA SG10201406938SA (en) 2013-12-24 2014-10-24 Laser Spike Annealing Using Fiber Lasers

Country Status (6)

Country Link
US (1) US9343307B2 (en)
JP (1) JP6054352B2 (en)
KR (1) KR20150075022A (en)
CN (1) CN104882370A (en)
SG (1) SG10201406938SA (en)
TW (1) TWI544522B (en)

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CN107924827B (en) * 2015-06-29 2022-07-01 Ipg光子公司 Fiber laser based system for uniform crystallization of amorphous silicon substrates
CN108886232B (en) * 2015-12-25 2021-08-17 鸿海精密工业股份有限公司 Wire harness light source, wire harness irradiation device, and laser lift-off method
CN105479009B (en) * 2016-02-02 2017-09-29 深圳光韵达光电科技股份有限公司 A kind of preparation method of SMT template surfaces super-drainage structure
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US9991122B2 (en) * 2016-08-31 2018-06-05 Micron Technology, Inc. Methods of forming semiconductor device structures including two-dimensional material structures
DE102017215025A1 (en) * 2017-08-28 2019-02-28 Robert Bosch Gmbh Apparatus and method for shaping laser radiation for material processing
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CN110181165B (en) * 2019-05-27 2021-03-26 北京华卓精科科技股份有限公司 Laser preheat annealing system and method

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Also Published As

Publication number Publication date
KR20150075022A (en) 2015-07-02
US9343307B2 (en) 2016-05-17
JP6054352B2 (en) 2016-12-27
TW201526086A (en) 2015-07-01
TWI544522B (en) 2016-08-01
US20150179449A1 (en) 2015-06-25
JP2015130483A (en) 2015-07-16
CN104882370A (en) 2015-09-02

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