SG10201406337UA - Nanostructure-based transparent conductors having increased haze and devices comprising the same - Google Patents
Nanostructure-based transparent conductors having increased haze and devices comprising the sameInfo
- Publication number
- SG10201406337UA SG10201406337UA SG10201406337UA SG10201406337UA SG10201406337UA SG 10201406337U A SG10201406337U A SG 10201406337UA SG 10201406337U A SG10201406337U A SG 10201406337UA SG 10201406337U A SG10201406337U A SG 10201406337UA SG 10201406337U A SG10201406337U A SG 10201406337UA
- Authority
- SG
- Singapore
- Prior art keywords
- nanostructure
- devices
- same
- based transparent
- transparent conductors
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title 1
- 239000002086 nanomaterial Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/413—Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Non-Insulated Conductors (AREA)
- Laminated Bodies (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
- Manufacturing Of Electric Cables (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26694509P | 2009-12-04 | 2009-12-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201406337UA true SG10201406337UA (en) | 2014-11-27 |
Family
ID=44201180
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201406337UA SG10201406337UA (en) | 2009-12-04 | 2010-12-03 | Nanostructure-based transparent conductors having increased haze and devices comprising the same |
SG2012040416A SG183092A1 (en) | 2009-12-04 | 2010-12-03 | Nanostructure-based transparent conductors having increased haze and devices comprising the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012040416A SG183092A1 (en) | 2009-12-04 | 2010-12-03 | Nanostructure-based transparent conductors having increased haze and devices comprising the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US9586816B2 (en) |
EP (1) | EP2507840B1 (en) |
JP (2) | JP5818822B2 (en) |
KR (1) | KR102154562B1 (en) |
CN (1) | CN102834923B (en) |
SG (2) | SG10201406337UA (en) |
TW (1) | TWI480896B (en) |
WO (1) | WO2012108853A1 (en) |
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US8018568B2 (en) | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
SG182421A1 (en) * | 2010-01-15 | 2012-08-30 | Cambrios Technologies Corp | Low-haze transparent conductors |
US9534124B2 (en) * | 2010-02-05 | 2017-01-03 | Cam Holding Corporation | Photosensitive ink compositions and transparent conductors and method of using the same |
JP5718449B2 (en) | 2010-03-23 | 2015-05-13 | カンブリオス テクノロジーズ コーポレイション | Etching pattern formation of transparent conductor with metal nanowires |
FI20105981A0 (en) * | 2010-09-23 | 2010-09-23 | Beneq Oy | SUBSTRATE WITH TRANSPARENT CONDUCTIVE OXIDE FILM AND ITS PRODUCTION METHOD |
WO2012061399A1 (en) | 2010-11-03 | 2012-05-10 | Cambrios Technologies Corporation | Coating compositions for forming nanocomposite films |
US9343609B2 (en) * | 2010-12-09 | 2016-05-17 | Faculdade De Ciencias E Tecnologia Da Universidade Nova De Lisboa | Mesoscopic optoelectronic devices comprising arrays of semiconductor pillars deposited from a suspension and production method thereof |
WO2012118582A1 (en) | 2011-02-28 | 2012-09-07 | Nthdegree Technologies Worldwide Inc. | Metallic nanofiber ink, substantially transparent conductor, and fabrication method |
US10494720B2 (en) | 2011-02-28 | 2019-12-03 | Nthdegree Technologies Worldwide Inc | Metallic nanofiber ink, substantially transparent conductor, and fabrication method |
US20120301705A1 (en) * | 2011-05-23 | 2012-11-29 | Eckert Karissa L | Nanowire coatings, films, and articles |
US20120305067A1 (en) * | 2011-05-30 | 2012-12-06 | Byong-Cheol Shin | Method of manufacturing photoelectrode structure and the resulting photoelectrode structure |
US9227224B2 (en) * | 2011-09-15 | 2016-01-05 | The Board Of Trustees Of The Leland Stanford Junior University | Method of forming macro-structured high surface area transparent conductive oxide electrodes |
EP3550629A3 (en) * | 2011-10-13 | 2019-12-25 | Cambrios Film Solutions Corporation | Opto-electrical devices incorporating metal nanowires |
CN102527621B (en) * | 2011-12-27 | 2014-07-09 | 浙江科创新材料科技有限公司 | Preparation method for haze-adjustable flexible transparent conductive film |
DE102012201688A1 (en) * | 2012-02-06 | 2013-08-08 | Robert Bosch Gmbh | Solar cell and process for its production |
DE102012102319A1 (en) | 2012-03-20 | 2013-09-26 | Rent A Scientist Gmbh | Nonlinear nano-wire useful e.g. for producing transparent electrodes e.g. in the fields of display, touch screen and in the field of printed electronics, comprises two linear portions and curved portion arranged between the linear portions |
JP5865851B2 (en) | 2012-03-23 | 2016-02-17 | 富士フイルム株式会社 | Manufacturing method of conductive member, conductive member, and touch panel using the same |
US9920207B2 (en) | 2012-06-22 | 2018-03-20 | C3Nano Inc. | Metal nanostructured networks and transparent conductive material |
US10029916B2 (en) | 2012-06-22 | 2018-07-24 | C3Nano Inc. | Metal nanowire networks and transparent conductive material |
US8993998B2 (en) * | 2012-07-02 | 2015-03-31 | The Regents Of The University Of California | Electro-optic device having nanowires interconnected into a network of nanowires |
WO2014085853A1 (en) * | 2012-12-03 | 2014-06-12 | Tropiglas Technologies Ltd | A spectrally selective panel |
KR101784849B1 (en) * | 2013-01-04 | 2017-10-13 | 삼성전자주식회사 | Light emitting device including multi-layered transparent electrode and method of fabricating the same |
US10020807B2 (en) | 2013-02-26 | 2018-07-10 | C3Nano Inc. | Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks |
US9368248B2 (en) | 2013-04-05 | 2016-06-14 | Nuovo Film, Inc. | Transparent conductive electrodes comprising metal nanowires, their structure design, and method of making such structures |
US11274223B2 (en) | 2013-11-22 | 2022-03-15 | C3 Nano, Inc. | Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches |
US11343911B1 (en) | 2014-04-11 | 2022-05-24 | C3 Nano, Inc. | Formable transparent conductive films with metal nanowires |
US9183968B1 (en) | 2014-07-31 | 2015-11-10 | C3Nano Inc. | Metal nanowire inks for the formation of transparent conductive films with fused networks |
US10040956B2 (en) * | 2014-11-05 | 2018-08-07 | Cam Holding Corporation | Short-chain fluorosurfactants with iodide additives for forming silver nanowire-based transparent conductive films |
WO2018019813A1 (en) | 2016-07-29 | 2018-02-01 | Basf Se | Transparent electroconductive layer and ink for production thereof |
TW201900798A (en) * | 2017-05-05 | 2019-01-01 | 美商3M新設資產公司 | Polymer film and display device containing the same |
CN110277504A (en) * | 2018-03-14 | 2019-09-24 | 江苏三月光电科技有限公司 | Transparent electrode and organic electroluminescence device comprising it |
US20200373476A1 (en) * | 2019-05-24 | 2020-11-26 | Facebook Technologies, Llc | Transparent oriented electroactive ceramics |
US11175521B2 (en) * | 2019-06-04 | 2021-11-16 | Facebook Technologies, Llc | Drive schemes for transparent tunable optical elements |
CN110459368B (en) * | 2019-08-06 | 2020-11-06 | 苏州大学 | High-haze conductive film and preparation method thereof |
US11428964B2 (en) | 2019-08-20 | 2022-08-30 | Meta Platforms Technologies, Llc | Transparent phase change actuator |
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TWI543873B (en) | 2009-08-24 | 2016-08-01 | 坎畢歐科技公司 | Purification of metal nanostructures for improved haze in transparent conductors made from the same |
WO2011031483A2 (en) | 2009-08-25 | 2011-03-17 | Cambrios Technologies Corporation | Methods for controlling metal nanostructures morphology |
-
2010
- 2010-12-03 SG SG10201406337UA patent/SG10201406337UA/en unknown
- 2010-12-03 KR KR1020127017288A patent/KR102154562B1/en active IP Right Grant
- 2010-12-03 CN CN201080062238.7A patent/CN102834923B/en active Active
- 2010-12-03 EP EP10807760.3A patent/EP2507840B1/en active Active
- 2010-12-03 US US12/960,316 patent/US9586816B2/en active Active
- 2010-12-03 JP JP2012557029A patent/JP5818822B2/en active Active
- 2010-12-03 WO PCT/US2010/058967 patent/WO2012108853A1/en active Application Filing
- 2010-12-03 SG SG2012040416A patent/SG183092A1/en unknown
- 2010-12-03 TW TW099142293A patent/TWI480896B/en active
-
2015
- 2015-06-29 JP JP2015129783A patent/JP6180468B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102154562B1 (en) | 2020-09-11 |
JP2015181132A (en) | 2015-10-15 |
TW201140621A (en) | 2011-11-16 |
EP2507840B1 (en) | 2020-04-29 |
JP2013513223A (en) | 2013-04-18 |
US20110163403A1 (en) | 2011-07-07 |
JP5818822B2 (en) | 2015-11-18 |
EP2507840A1 (en) | 2012-10-10 |
US9586816B2 (en) | 2017-03-07 |
CN102834923B (en) | 2017-05-10 |
WO2012108853A1 (en) | 2012-08-16 |
TWI480896B (en) | 2015-04-11 |
CN102834923A (en) | 2012-12-19 |
SG183092A1 (en) | 2012-09-27 |
JP6180468B2 (en) | 2017-08-16 |
KR20130010107A (en) | 2013-01-25 |
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