SG10201406276WA - Phase-shift mask with assist phase regions - Google Patents

Phase-shift mask with assist phase regions

Info

Publication number
SG10201406276WA
SG10201406276WA SG10201406276WA SG10201406276WA SG10201406276WA SG 10201406276W A SG10201406276W A SG 10201406276WA SG 10201406276W A SG10201406276W A SG 10201406276WA SG 10201406276W A SG10201406276W A SG 10201406276WA SG 10201406276W A SG10201406276W A SG 10201406276WA
Authority
SG
Singapore
Prior art keywords
phase
regions
shift mask
assist
shift
Prior art date
Application number
SG10201406276WA
Inventor
Robert L Hsieh
Warren W Flack
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/066,804 external-priority patent/US8323857B2/en
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201406276WA publication Critical patent/SG10201406276WA/en

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Led Devices (AREA)

Abstract

PHASE-SHIFT MASK WITH ASSIST PHASE A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R' reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R' are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Methods of forming LEDs using the phase-shift mask are also disclosed. (Fig. 8A) 26
SG10201406276WA 2011-04-25 2012-04-18 Phase-shift mask with assist phase regions SG10201406276WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/066,804 US8323857B2 (en) 2010-12-21 2011-04-25 Phase-shift mask with assist phase regions

Publications (1)

Publication Number Publication Date
SG10201406276WA true SG10201406276WA (en) 2015-01-29

Family

ID=47054346

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201406276WA SG10201406276WA (en) 2011-04-25 2012-04-18 Phase-shift mask with assist phase regions
SG2012028445A SG185228A1 (en) 2011-04-25 2012-04-18 Phase-shift mask with assist phase regions

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012028445A SG185228A1 (en) 2011-04-25 2012-04-18 Phase-shift mask with assist phase regions

Country Status (4)

Country Link
JP (1) JP5661680B2 (en)
CN (1) CN102759851B (en)
SG (2) SG10201406276WA (en)
TW (1) TWI453534B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8796053B2 (en) * 2010-12-21 2014-08-05 Ultratech, Inc. Photolithographic LED fabrication using phase-shift mask
US8895211B2 (en) * 2012-12-11 2014-11-25 GlobalFoundries, Inc. Semiconductor device resolution enhancement by etching multiple sides of a mask
TWI506755B (en) * 2013-09-26 2015-11-01 Lextar Electronics Corp Light-emitting diode with positioning structure
CN110161799B (en) * 2018-02-11 2020-08-04 京东方科技集团股份有限公司 Phase shift mask plate, array substrate, preparation method of array substrate and display device
JP7023790B2 (en) * 2018-05-22 2022-02-22 株式会社Ｓｃｒｅｅｎホールディングス Photomask inspection device and photomask inspection method
JP2022147786A (en) * 2021-03-23 2022-10-06 キオクシア株式会社 Template, workpiece, and alignment method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04218046A (en) * 1990-06-21 1992-08-07 Matsushita Electron Corp Photomask and production thereof
DE69131497T2 (en) * 1990-06-21 2000-03-30 Matsushita Electronics Corp Photomask used in photolithography and a manufacturing method thereof
JPH1115128A (en) * 1997-06-20 1999-01-22 Hitachi Ltd Photomask and pattern formation using the same
JPH1184625A (en) * 1997-07-07 1999-03-26 Matsushita Electron Corp Mask for production of semiconductor device and production of semiconductor device
JPH11251219A (en) * 1998-03-02 1999-09-17 Nikon Corp Aligner, exposure method, and manufacture of display device
JP3275863B2 (en) * 1999-01-08 2002-04-22 日本電気株式会社 Photo mask
JP3733008B2 (en) * 1999-09-08 2006-01-11 シャープ株式会社 III-N compound semiconductor device
KR100452732B1 (en) * 2000-07-21 2004-10-12 에이에스엠엘 네델란즈 비.브이. Assist features for use in lithographic projection
KR100498441B1 (en) * 2001-04-17 2005-07-01 삼성전자주식회사 Mask for modifing optical proximity effect and method of manufacturing thereof
US7161188B2 (en) * 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
KR100706952B1 (en) * 2005-07-22 2007-04-12 삼성전기주식회사 VERTICALLY STRUCTURED GaN TYPE LED DEVICE AND METHOD OF MANUFACTURING THE SAME
KR100610639B1 (en) * 2005-07-22 2006-08-09 삼성전기주식회사 Vertically structured gan type led device and method of manufacturing the same
JP4881633B2 (en) * 2006-03-10 2012-02-22 凸版印刷株式会社 Photomask blank for chromeless phase shift mask, chromeless phase shift mask, and method of manufacturing chromeless phase shift mask
JP5323526B2 (en) * 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 Phase shift mask blank and method of manufacturing phase shift mask
JP2010278140A (en) * 2009-05-27 2010-12-09 Toshiba Corp Pattern forming method

Also Published As

Publication number Publication date
CN102759851B (en) 2017-04-26
CN102759851A (en) 2012-10-31
TWI453534B (en) 2014-09-21
JP5661680B2 (en) 2015-01-28
JP2012230378A (en) 2012-11-22
TW201243489A (en) 2012-11-01
SG185228A1 (en) 2012-11-29

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