SG10201406202TA - Method for repairing low-k dielectric damage - Google Patents

Method for repairing low-k dielectric damage

Info

Publication number
SG10201406202TA
SG10201406202TA SG10201406202TA SG10201406202TA SG10201406202TA SG 10201406202T A SG10201406202T A SG 10201406202TA SG 10201406202T A SG10201406202T A SG 10201406202TA SG 10201406202T A SG10201406202T A SG 10201406202TA SG 10201406202T A SG10201406202T A SG 10201406202TA
Authority
SG
Singapore
Prior art keywords
dielectric damage
repairing low
repairing
low
dielectric
Prior art date
Application number
SG10201406202TA
Inventor
Stephen M Sirard
Kenji Takeshita
Iii Andrew D Bailey
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201406202TA publication Critical patent/SG10201406202TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
SG10201406202TA 2009-10-22 2010-10-20 Method for repairing low-k dielectric damage SG10201406202TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/604,224 US20110097904A1 (en) 2009-10-22 2009-10-22 Method for repairing low-k dielectric damage

Publications (1)

Publication Number Publication Date
SG10201406202TA true SG10201406202TA (en) 2014-11-27

Family

ID=43898807

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201406202TA SG10201406202TA (en) 2009-10-22 2010-10-20 Method for repairing low-k dielectric damage

Country Status (6)

Country Link
US (1) US20110097904A1 (en)
KR (1) KR20120099221A (en)
CN (1) CN102598227A (en)
SG (1) SG10201406202TA (en)
TW (1) TW201123315A (en)
WO (1) WO2011050062A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288271B2 (en) * 2009-11-02 2012-10-16 International Business Machines Corporation Method for reworking antireflective coating over semiconductor substrate
US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
US8808496B2 (en) 2011-09-30 2014-08-19 Tokyo Electron Limited Plasma tuning rods in microwave processing systems
US9728416B2 (en) 2011-09-30 2017-08-08 Tokyo Electron Limited Plasma tuning rods in microwave resonator plasma sources
US9396955B2 (en) 2011-09-30 2016-07-19 Tokyo Electron Limited Plasma tuning rods in microwave resonator processing systems
US9111727B2 (en) 2011-09-30 2015-08-18 Tokyo Electron Limited Plasma tuning rods in microwave resonator plasma sources
CN103377989B (en) * 2012-04-18 2015-08-05 中芯国际集成电路制造(上海)有限公司 The manufacture method of damascene structure
CN103377996B (en) * 2012-04-28 2016-04-20 中芯国际集成电路制造(上海)有限公司 Form the method for dual-damascene structure
US11495456B2 (en) * 2018-10-15 2022-11-08 Beijing E-Town Semiconductor Technology, Co., Ltd Ozone for selective hydrophilic surface treatment

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US6346490B1 (en) * 2000-04-05 2002-02-12 Lsi Logic Corporation Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps
WO2002001621A2 (en) * 2000-06-23 2002-01-03 Honeywell International, Inc. Method to restore hydrophobicity in dielectric films and materials
US7541200B1 (en) * 2002-01-24 2009-06-02 Novellus Systems, Inc. Treatment of low k films with a silylating agent for damage repair
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US6962869B1 (en) * 2002-10-15 2005-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. SiOCH low k surface protection layer formation by CxHy gas plasma treatment
US7709371B2 (en) * 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US6921727B2 (en) * 2003-03-11 2005-07-26 Applied Materials, Inc. Method for modifying dielectric characteristics of dielectric layers
US7271089B2 (en) * 2004-09-01 2007-09-18 Micron Technology, Inc. Barrier layer, IC via, and IC line forming methods
US7135402B2 (en) * 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US7556970B2 (en) * 2006-03-27 2009-07-07 Tokyo Electron Limited Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
US20070287301A1 (en) * 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
US7500397B2 (en) * 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
US7807579B2 (en) * 2007-04-19 2010-10-05 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
US20090140418A1 (en) * 2007-11-29 2009-06-04 Li Siyi Method for integrating porous low-k dielectric layers

Also Published As

Publication number Publication date
CN102598227A (en) 2012-07-18
KR20120099221A (en) 2012-09-07
WO2011050062A2 (en) 2011-04-28
WO2011050062A3 (en) 2011-08-04
US20110097904A1 (en) 2011-04-28
TW201123315A (en) 2011-07-01

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