SG10201401574VA - Metal compound coated colloidal particles process for making and use therefor - Google Patents
Metal compound coated colloidal particles process for making and use thereforInfo
- Publication number
- SG10201401574VA SG10201401574VA SG10201401574VA SG10201401574VA SG10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA
- Authority
- SG
- Singapore
- Prior art keywords
- making
- metal compound
- colloidal particles
- compound coated
- use therefor
- Prior art date
Links
- 150000002736 metal compounds Chemical class 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/745—Iron
-
- B01J35/23—
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/145—After-treatment of oxides or hydroxides, e.g. pulverising, drying, decreasing the acidity
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/28—Compounds of silicon
- C09C1/30—Silicic acid
- C09C1/3045—Treatment with inorganic compounds
- C09C1/3054—Coating
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361813950P | 2013-04-19 | 2013-04-19 | |
US14/224,839 US20140315386A1 (en) | 2013-04-19 | 2014-03-25 | Metal Compound Coated Colloidal Particles Process for Making and Use Therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201401574VA true SG10201401574VA (en) | 2014-11-27 |
Family
ID=50478768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201401574VA SG10201401574VA (en) | 2013-04-19 | 2014-04-16 | Metal compound coated colloidal particles process for making and use therefor |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140315386A1 (en) |
EP (1) | EP2803704A3 (en) |
KR (1) | KR101623428B1 (en) |
CN (1) | CN104107693A (en) |
IL (1) | IL232096A0 (en) |
SG (1) | SG10201401574VA (en) |
TW (1) | TW201441419A (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104371649B (en) * | 2014-09-28 | 2017-05-10 | 顾泉 | Chemical-mechanical polishing composition |
US20160122590A1 (en) * | 2014-10-31 | 2016-05-05 | Air Products And Chemicals, Inc. | Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor |
CN104513627B (en) * | 2014-12-22 | 2017-04-05 | 深圳市力合材料有限公司 | A kind of integrated circuit copper CMP composition and preparation method thereof |
CN104630749A (en) * | 2015-02-22 | 2015-05-20 | 桂林理工大学 | Corrosion-resistant self-assembled doped film layer on aluminum alloy surface and preparation method of corrosion-resistant self-assembled doped film layer |
US10160884B2 (en) | 2015-03-23 | 2018-12-25 | Versum Materials Us, Llc | Metal compound chemically anchored colloidal particles and methods of production and use thereof |
CN104694081B (en) * | 2015-03-23 | 2019-09-20 | 江苏海迅实业集团股份有限公司 | The Compostie abrasive particles of silica nanometer containing cobalt doped colloidal sol, polishing fluid and preparation method thereof |
KR20170044522A (en) * | 2015-10-15 | 2017-04-25 | 삼성전자주식회사 | Slurry composition for chemical mechanical polishing, method of preparing the same, and polishing method using the same |
US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
US10421890B2 (en) | 2016-03-31 | 2019-09-24 | Versum Materials Us, Llc | Composite particles, method of refining and use thereof |
HUE042965T2 (en) * | 2016-06-22 | 2019-07-29 | Kurita Water Ind Ltd | Aqueous oil-in-water emulsions of organic amines |
CN107456966A (en) * | 2016-12-12 | 2017-12-12 | 伦慧东 | The preparation method of the in-situ modified titanium dioxide of one metal ion species |
CN111902869B (en) * | 2018-03-30 | 2022-06-24 | 索尼公司 | Method for producing magnetic powder and method for producing magnetic recording medium |
US20190352535A1 (en) * | 2018-05-21 | 2019-11-21 | Versum Materials Us, Llc | Chemical Mechanical Polishing Tungsten Buffing Slurries |
US11643599B2 (en) | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
US11111435B2 (en) | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
KR102184526B1 (en) * | 2019-12-06 | 2020-11-30 | 에스다이아몬드공업 주식회사 | A method for manufacturing the pad or drypolishing |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4192664A (en) * | 1976-11-19 | 1980-03-11 | Pittsburgh Corning Corporation | Method of making a cellular body from a high silica borosilicate composition |
US4478742A (en) | 1981-09-17 | 1984-10-23 | Nalco Chemical Company | Preparation of a ferric acetate coated silica sol by selective anion exchange |
US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7077880B2 (en) * | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US8858819B2 (en) * | 2010-02-15 | 2014-10-14 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a tungsten-containing substrate |
TWI574916B (en) | 2011-09-19 | 2017-03-21 | 盟智科技股份有限公司 | Silica having metal ions absorbed thereon and fabricating method thereof |
-
2014
- 2014-03-25 US US14/224,839 patent/US20140315386A1/en not_active Abandoned
- 2014-04-13 IL IL232096A patent/IL232096A0/en unknown
- 2014-04-14 TW TW103113595A patent/TW201441419A/en unknown
- 2014-04-15 EP EP14164676.0A patent/EP2803704A3/en not_active Withdrawn
- 2014-04-16 SG SG10201401574VA patent/SG10201401574VA/en unknown
- 2014-04-18 KR KR1020140046734A patent/KR101623428B1/en not_active IP Right Cessation
- 2014-04-21 CN CN201410160248.4A patent/CN104107693A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20140315386A1 (en) | 2014-10-23 |
KR101623428B1 (en) | 2016-05-23 |
EP2803704A2 (en) | 2014-11-19 |
KR20140125744A (en) | 2014-10-29 |
TW201441419A (en) | 2014-11-01 |
IL232096A0 (en) | 2014-08-31 |
EP2803704A3 (en) | 2015-06-17 |
CN104107693A (en) | 2014-10-22 |
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