SG10201401574VA - Metal compound coated colloidal particles process for making and use therefor - Google Patents

Metal compound coated colloidal particles process for making and use therefor

Info

Publication number
SG10201401574VA
SG10201401574VA SG10201401574VA SG10201401574VA SG10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA SG 10201401574V A SG10201401574V A SG 10201401574VA
Authority
SG
Singapore
Prior art keywords
making
metal compound
colloidal particles
compound coated
use therefor
Prior art date
Application number
SG10201401574VA
Inventor
Zhou Hongjun
Shi Xiaobo
A Schlueter James
T Schwartz Jo-Ann
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201401574VA publication Critical patent/SG10201401574VA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74Iron group metals
    • B01J23/745Iron
    • B01J35/23
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14Methods for preparing oxides or hydroxides in general
    • C01B13/145After-treatment of oxides or hydroxides, e.g. pulverising, drying, decreasing the acidity
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09CTREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28Compounds of silicon
    • C09C1/30Silicic acid
    • C09C1/3045Treatment with inorganic compounds
    • C09C1/3054Coating
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • C09K3/1445Composite particles, e.g. coated particles the coating consisting exclusively of metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/30Particle morphology extending in three dimensions
    • C01P2004/32Spheres
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/80Particles consisting of a mixture of two or more inorganic phases
    • C01P2004/82Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
    • C01P2004/84Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201401574VA 2013-04-19 2014-04-16 Metal compound coated colloidal particles process for making and use therefor SG10201401574VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361813950P 2013-04-19 2013-04-19
US14/224,839 US20140315386A1 (en) 2013-04-19 2014-03-25 Metal Compound Coated Colloidal Particles Process for Making and Use Therefor

Publications (1)

Publication Number Publication Date
SG10201401574VA true SG10201401574VA (en) 2014-11-27

Family

ID=50478768

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201401574VA SG10201401574VA (en) 2013-04-19 2014-04-16 Metal compound coated colloidal particles process for making and use therefor

Country Status (7)

Country Link
US (1) US20140315386A1 (en)
EP (1) EP2803704A3 (en)
KR (1) KR101623428B1 (en)
CN (1) CN104107693A (en)
IL (1) IL232096A0 (en)
SG (1) SG10201401574VA (en)
TW (1) TW201441419A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104371649B (en) * 2014-09-28 2017-05-10 顾泉 Chemical-mechanical polishing composition
US20160122590A1 (en) * 2014-10-31 2016-05-05 Air Products And Chemicals, Inc. Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
CN104513627B (en) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 A kind of integrated circuit copper CMP composition and preparation method thereof
CN104630749A (en) * 2015-02-22 2015-05-20 桂林理工大学 Corrosion-resistant self-assembled doped film layer on aluminum alloy surface and preparation method of corrosion-resistant self-assembled doped film layer
US10160884B2 (en) 2015-03-23 2018-12-25 Versum Materials Us, Llc Metal compound chemically anchored colloidal particles and methods of production and use thereof
CN104694081B (en) * 2015-03-23 2019-09-20 江苏海迅实业集团股份有限公司 The Compostie abrasive particles of silica nanometer containing cobalt doped colloidal sol, polishing fluid and preparation method thereof
KR20170044522A (en) * 2015-10-15 2017-04-25 삼성전자주식회사 Slurry composition for chemical mechanical polishing, method of preparing the same, and polishing method using the same
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US10421890B2 (en) 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
HUE042965T2 (en) * 2016-06-22 2019-07-29 Kurita Water Ind Ltd Aqueous oil-in-water emulsions of organic amines
CN107456966A (en) * 2016-12-12 2017-12-12 伦慧东 The preparation method of the in-situ modified titanium dioxide of one metal ion species
CN111902869B (en) * 2018-03-30 2022-06-24 索尼公司 Method for producing magnetic powder and method for producing magnetic recording medium
US20190352535A1 (en) * 2018-05-21 2019-11-21 Versum Materials Us, Llc Chemical Mechanical Polishing Tungsten Buffing Slurries
US11643599B2 (en) 2018-07-20 2023-05-09 Versum Materials Us, Llc Tungsten chemical mechanical polishing for reduced oxide erosion
US11111435B2 (en) 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
KR102184526B1 (en) * 2019-12-06 2020-11-30 에스다이아몬드공업 주식회사 A method for manufacturing the pad or drypolishing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4192664A (en) * 1976-11-19 1980-03-11 Pittsburgh Corning Corporation Method of making a cellular body from a high silica borosilicate composition
US4478742A (en) 1981-09-17 1984-10-23 Nalco Chemical Company Preparation of a ferric acetate coated silica sol by selective anion exchange
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
WO2003044123A1 (en) * 2001-11-16 2003-05-30 Ferro Corporation Particles for use in cmp slurries and method for producing them
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US8858819B2 (en) * 2010-02-15 2014-10-14 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a tungsten-containing substrate
TWI574916B (en) 2011-09-19 2017-03-21 盟智科技股份有限公司 Silica having metal ions absorbed thereon and fabricating method thereof

Also Published As

Publication number Publication date
US20140315386A1 (en) 2014-10-23
KR101623428B1 (en) 2016-05-23
EP2803704A2 (en) 2014-11-19
KR20140125744A (en) 2014-10-29
TW201441419A (en) 2014-11-01
IL232096A0 (en) 2014-08-31
EP2803704A3 (en) 2015-06-17
CN104107693A (en) 2014-10-22

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