SE9902628D0 - High yield DFB laser with effective reject selection - Google Patents
High yield DFB laser with effective reject selectionInfo
- Publication number
- SE9902628D0 SE9902628D0 SE9902628A SE9902628A SE9902628D0 SE 9902628 D0 SE9902628 D0 SE 9902628D0 SE 9902628 A SE9902628 A SE 9902628A SE 9902628 A SE9902628 A SE 9902628A SE 9902628 D0 SE9902628 D0 SE 9902628D0
- Authority
- SE
- Sweden
- Prior art keywords
- laser
- high yield
- mirror
- dfb laser
- power
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
- H01S5/1246—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts plurality of phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9902628A SE516784C2 (sv) | 1999-07-08 | 1999-07-08 | Förfarande för effektivt urval av DFB-lasrar |
TW088112539A TW419870B (en) | 1999-07-08 | 1999-07-23 | High yield DFB laser with effective reject selection |
CA002378386A CA2378386A1 (en) | 1999-07-08 | 2000-06-16 | High yield dfb laser with effective reject selection |
EP00946596A EP1218989A1 (en) | 1999-07-08 | 2000-06-16 | High yield dfb laser with effective reject selection |
JP2001509130A JP2003504879A (ja) | 1999-07-08 | 2000-06-16 | 高収率dfbレーザー |
KR1020027000167A KR20020035640A (ko) | 1999-07-08 | 2000-06-16 | 거부 선택을 효율적으로 하는 고 수율 dfb 레이저 |
CNB008100748A CN1171364C (zh) | 1999-07-08 | 2000-06-16 | 选择实现增益裕度需要的激光器的方法 |
PCT/SE2000/001274 WO2001005007A1 (en) | 1999-07-08 | 2000-06-16 | High yield dfb laser with effective reject selection |
AU60330/00A AU6033000A (en) | 1999-07-08 | 2000-06-16 | High yield dfb laser with effective reject selection |
US09/612,128 US6826203B1 (en) | 1999-07-08 | 2000-07-07 | High yield DFB laser with effective reject selection |
HK03100299.5A HK1048201B (zh) | 1999-07-08 | 2003-01-13 | 選擇實現增益裕度需要的激光器的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9902628A SE516784C2 (sv) | 1999-07-08 | 1999-07-08 | Förfarande för effektivt urval av DFB-lasrar |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9902628D0 true SE9902628D0 (sv) | 1999-07-08 |
SE9902628L SE9902628L (sv) | 2001-01-09 |
SE516784C2 SE516784C2 (sv) | 2002-03-05 |
Family
ID=20416436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9902628A SE516784C2 (sv) | 1999-07-08 | 1999-07-08 | Förfarande för effektivt urval av DFB-lasrar |
Country Status (11)
Country | Link |
---|---|
US (1) | US6826203B1 (sv) |
EP (1) | EP1218989A1 (sv) |
JP (1) | JP2003504879A (sv) |
KR (1) | KR20020035640A (sv) |
CN (1) | CN1171364C (sv) |
AU (1) | AU6033000A (sv) |
CA (1) | CA2378386A1 (sv) |
HK (1) | HK1048201B (sv) |
SE (1) | SE516784C2 (sv) |
TW (1) | TW419870B (sv) |
WO (1) | WO2001005007A1 (sv) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100753816B1 (ko) * | 2005-10-25 | 2007-08-31 | 한국전자통신연구원 | 수동 모드 잠김을 일으키는 레이저 다이오드 및 그 다이오드를 이용한 광 펄스 생성 방법 |
KR101102075B1 (ko) * | 2009-03-06 | 2012-01-04 | 주식회사 에취알에스 | 계육탕(鷄肉湯) 조리를 위한 항아리 저온조리기 |
US20100290489A1 (en) * | 2009-05-15 | 2010-11-18 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method |
US10680409B2 (en) | 2018-03-07 | 2020-06-09 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Laser device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60149183A (ja) * | 1984-01-17 | 1985-08-06 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レ−ザ |
JPS61216383A (ja) * | 1985-03-20 | 1986-09-26 | Nec Corp | 分布帰還型半導体レ−ザ |
US4740987A (en) * | 1986-06-30 | 1988-04-26 | American Telephone And Telegraph Company, At&T Bell Laboratories | Distributed-feedback laser having enhanced mode selectivity |
US4885231A (en) * | 1988-05-06 | 1989-12-05 | Bell Communications Research, Inc. | Phase-shifted gratings by selective image reversal of photoresist |
KR940007605B1 (ko) * | 1991-11-07 | 1994-08-20 | 주식회사 금성사 | 반도체 레이저 다이오드 제조방법 |
FR2708389B1 (fr) * | 1993-07-01 | 1995-09-15 | Cit Alcatel | Dispositif d'asservissement de la tension de polarisation d'une source optique. |
US5394489A (en) * | 1993-07-27 | 1995-02-28 | At&T Corp. | Wavelength division multiplexed optical communication transmitters |
US5548607A (en) * | 1994-06-08 | 1996-08-20 | Lucent Technologies, Inc. | Article comprising an integrated laser/modulator combination |
-
1999
- 1999-07-08 SE SE9902628A patent/SE516784C2/sv not_active IP Right Cessation
- 1999-07-23 TW TW088112539A patent/TW419870B/zh not_active IP Right Cessation
-
2000
- 2000-06-16 CA CA002378386A patent/CA2378386A1/en not_active Abandoned
- 2000-06-16 EP EP00946596A patent/EP1218989A1/en not_active Withdrawn
- 2000-06-16 JP JP2001509130A patent/JP2003504879A/ja active Pending
- 2000-06-16 CN CNB008100748A patent/CN1171364C/zh not_active Expired - Fee Related
- 2000-06-16 KR KR1020027000167A patent/KR20020035640A/ko not_active Application Discontinuation
- 2000-06-16 WO PCT/SE2000/001274 patent/WO2001005007A1/en not_active Application Discontinuation
- 2000-06-16 AU AU60330/00A patent/AU6033000A/en not_active Abandoned
- 2000-07-07 US US09/612,128 patent/US6826203B1/en not_active Expired - Fee Related
-
2003
- 2003-01-13 HK HK03100299.5A patent/HK1048201B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1218989A1 (en) | 2002-07-03 |
AU6033000A (en) | 2001-01-30 |
SE9902628L (sv) | 2001-01-09 |
US6826203B1 (en) | 2004-11-30 |
JP2003504879A (ja) | 2003-02-04 |
CN1171364C (zh) | 2004-10-13 |
HK1048201A1 (en) | 2003-03-21 |
CN1360747A (zh) | 2002-07-24 |
WO2001005007A1 (en) | 2001-01-18 |
CA2378386A1 (en) | 2001-01-18 |
TW419870B (en) | 2001-01-21 |
SE516784C2 (sv) | 2002-03-05 |
HK1048201B (zh) | 2005-05-27 |
KR20020035640A (ko) | 2002-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |