SE9202089D0 - PRODUCTION OF SILICON CARBIDE WHISKERS - Google Patents

PRODUCTION OF SILICON CARBIDE WHISKERS

Info

Publication number
SE9202089D0
SE9202089D0 SE9202089A SE9202089A SE9202089D0 SE 9202089 D0 SE9202089 D0 SE 9202089D0 SE 9202089 A SE9202089 A SE 9202089A SE 9202089 A SE9202089 A SE 9202089A SE 9202089 D0 SE9202089 D0 SE 9202089D0
Authority
SE
Sweden
Prior art keywords
component
silicon carbide
carbide whiskers
boron
carbon
Prior art date
Application number
SE9202089A
Other languages
Swedish (sv)
Original Assignee
Advanced Ind Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Ind Materials filed Critical Advanced Ind Materials
Priority to SE9202089A priority Critical patent/SE9202089D0/en
Publication of SE9202089D0 publication Critical patent/SE9202089D0/en
Priority to PCT/SE1993/000329 priority patent/WO1994001363A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Abstract

A process for producing silicon carbide whiskers in which a particulate form of carbon is combined with a silicon component, a boron component and seeding component to form a mixture which is then subjected to temperatures above about 1300 C in a nonoxidizing atmosphere such that carbon reacts with silica to form silicon carbide whiskers. The preferred particulate carbon, silicon component, boron component and seeding component are, respectively, carbon black, fumed silica, boron oxide and cobalt, iron or nickel. The size and shape of the whiskers can be controlled by varying the size of the seeding component and the concentration of the boron component.
SE9202089A 1992-07-06 1992-07-06 PRODUCTION OF SILICON CARBIDE WHISKERS SE9202089D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SE9202089A SE9202089D0 (en) 1992-07-06 1992-07-06 PRODUCTION OF SILICON CARBIDE WHISKERS
PCT/SE1993/000329 WO1994001363A1 (en) 1992-07-06 1993-04-20 Production of silicon carbide whiskers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9202089A SE9202089D0 (en) 1992-07-06 1992-07-06 PRODUCTION OF SILICON CARBIDE WHISKERS

Publications (1)

Publication Number Publication Date
SE9202089D0 true SE9202089D0 (en) 1992-07-06

Family

ID=20386719

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9202089A SE9202089D0 (en) 1992-07-06 1992-07-06 PRODUCTION OF SILICON CARBIDE WHISKERS

Country Status (2)

Country Link
SE (1) SE9202089D0 (en)
WO (1) WO1994001363A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115724689B (en) * 2022-11-21 2023-05-26 景德镇陶瓷大学 Low-temperature in-situ synthesis method of silicon carbide whisker coated surface modified cordierite honeycomb ceramic and product prepared by same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3687472T2 (en) * 1985-04-04 1993-07-01 Nippon Steel Corp METHOD FOR PRODUCING SILICON CARBIDE PARTICLES AND A SILICON CARBIDE INTERMEDIATE BODY.
US4873069A (en) * 1987-03-09 1989-10-10 American Matrix, Inc. Method for the preparation of silicon carbide whiskers
EP0310265A1 (en) * 1987-09-30 1989-04-05 The Standard Oil Company Formation of fibrous silicon carbide and silicon nitride
US5037626A (en) * 1988-11-22 1991-08-06 Union Oil Company Of California Process for producing silicon carbide whiskers using seeding agent

Also Published As

Publication number Publication date
WO1994001363A1 (en) 1994-01-20

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