SE8803506L - Yttriumoxidkomposition foer anvaendning vid foeraangning och foerfarande foer framstaellning av antireflexfilm daerav - Google Patents

Yttriumoxidkomposition foer anvaendning vid foeraangning och foerfarande foer framstaellning av antireflexfilm daerav

Info

Publication number
SE8803506L
SE8803506L SE8803506A SE8803506A SE8803506L SE 8803506 L SE8803506 L SE 8803506L SE 8803506 A SE8803506 A SE 8803506A SE 8803506 A SE8803506 A SE 8803506A SE 8803506 L SE8803506 L SE 8803506L
Authority
SE
Sweden
Prior art keywords
oxide composition
yettrium
cultivation
procedures
application
Prior art date
Application number
SE8803506A
Other languages
English (en)
Swedish (sv)
Other versions
SE8803506D0 (sv
Inventor
S Tsuboi
Y Matsushita
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE8803506D0 publication Critical patent/SE8803506D0/xx
Publication of SE8803506L publication Critical patent/SE8803506L/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
SE8803506A 1987-02-04 1988-10-03 Yttriumoxidkomposition foer anvaendning vid foeraangning och foerfarande foer framstaellning av antireflexfilm daerav SE8803506L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62023946A JPS63192856A (ja) 1987-02-04 1987-02-04 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法

Publications (2)

Publication Number Publication Date
SE8803506D0 SE8803506D0 (sv) 1988-10-03
SE8803506L true SE8803506L (sv) 1988-10-03

Family

ID=12124709

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8803506A SE8803506L (sv) 1987-02-04 1988-10-03 Yttriumoxidkomposition foer anvaendning vid foeraangning och foerfarande foer framstaellning av antireflexfilm daerav

Country Status (6)

Country Link
JP (1) JPS63192856A (enExample)
KR (1) KR910008716B1 (enExample)
CN (1) CN1017164B (enExample)
DE (2) DE3890060C2 (enExample)
SE (1) SE8803506L (enExample)
WO (1) WO1988005963A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850371B2 (ja) * 1989-06-19 1999-01-27 松下電器産業株式会社 画像出力装置
CN102140621A (zh) * 2011-03-10 2011-08-03 苏州大学 一种致密复合二氧化钛薄膜的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
DE3613501A1 (de) * 1986-04-22 1987-10-29 Stefan Dipl Ing Donnerhack Verfahren zur antikatalytischen beschichtung von thermoelementen

Also Published As

Publication number Publication date
DE3890060C2 (de) 1990-08-16
KR910008716B1 (ko) 1991-10-19
JPS63192856A (ja) 1988-08-10
KR890700927A (ko) 1989-04-28
CN87107819A (zh) 1988-08-17
DE3890060T (enExample) 1989-03-23
WO1988005963A1 (en) 1988-08-11
SE8803506D0 (sv) 1988-10-03
CN1017164B (zh) 1992-06-24

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