SE8206432D0 - Sett vid vetskefasepitaxi jemte anordning for genomforande av settet - Google Patents
Sett vid vetskefasepitaxi jemte anordning for genomforande av settetInfo
- Publication number
- SE8206432D0 SE8206432D0 SE8206432A SE8206432A SE8206432D0 SE 8206432 D0 SE8206432 D0 SE 8206432D0 SE 8206432 A SE8206432 A SE 8206432A SE 8206432 A SE8206432 A SE 8206432A SE 8206432 D0 SE8206432 D0 SE 8206432D0
- Authority
- SE
- Sweden
- Prior art keywords
- melt
- holder
- cells
- melts
- substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8206432A SE443583B (sv) | 1982-11-12 | 1982-11-12 | Anordning vid vetskefasepitaxi |
US06/626,877 US4602592A (en) | 1982-11-12 | 1983-11-11 | Apparatus for carrying out liquid phase epitaxy growth |
PCT/SE1983/000393 WO1984001968A1 (en) | 1982-11-12 | 1983-11-11 | Method in liquid phase epitaxy and apparatus for carrying out the method |
GB08417264A GB2140705B (en) | 1982-11-12 | 1983-11-11 | Method in liquid phase epitaxy and apparatus for carrying out the method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8206432A SE443583B (sv) | 1982-11-12 | 1982-11-12 | Anordning vid vetskefasepitaxi |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8206432D0 true SE8206432D0 (sv) | 1982-11-12 |
SE8206432L SE8206432L (sv) | 1984-05-13 |
SE443583B SE443583B (sv) | 1986-03-03 |
Family
ID=20348558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8206432A SE443583B (sv) | 1982-11-12 | 1982-11-12 | Anordning vid vetskefasepitaxi |
Country Status (4)
Country | Link |
---|---|
US (1) | US4602592A (sv) |
GB (1) | GB2140705B (sv) |
SE (1) | SE443583B (sv) |
WO (1) | WO1984001968A1 (sv) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6283399A (ja) * | 1985-10-04 | 1987-04-16 | Mitsubishi Electric Corp | 液相エピタキシヤル成長用ボ−ト |
US4996956A (en) * | 1990-03-12 | 1991-03-05 | Briggs & Stratton Corporation | Breather apparatus for internal combustion engines |
US6130954A (en) * | 1996-01-02 | 2000-10-10 | Carver; Robert W. | High back-emf, high pressure subwoofer having small volume cabinet, low frequency cutoff and pressure resistant surround |
WO1998007294A1 (en) | 1996-08-12 | 1998-02-19 | Carver R W | High back emf, high pressure subwoofer |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE362986B (sv) * | 1970-04-14 | 1973-12-27 | Western Electric Co | |
US4028148A (en) * | 1974-12-20 | 1977-06-07 | Nippon Telegraph And Telephone Public Corporation | Method of epitaxially growing a laminate semiconductor layer in liquid phase |
JPS5556625A (en) * | 1978-10-20 | 1980-04-25 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growing device |
NL185375C (nl) * | 1980-01-16 | 1990-03-16 | Philips Nv | Inrichting voor het epitaxiaal aanbrengen van een laag halfgeleidermateriaal. |
FR2476690A1 (fr) * | 1980-02-27 | 1981-08-28 | Radiotechnique Compelec | Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle |
FR2481325A1 (fr) * | 1980-04-23 | 1981-10-30 | Radiotechnique Compelec | Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle |
-
1982
- 1982-11-12 SE SE8206432A patent/SE443583B/sv not_active IP Right Cessation
-
1983
- 1983-11-11 WO PCT/SE1983/000393 patent/WO1984001968A1/en unknown
- 1983-11-11 GB GB08417264A patent/GB2140705B/en not_active Expired
- 1983-11-11 US US06/626,877 patent/US4602592A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
SE8206432L (sv) | 1984-05-13 |
GB2140705B (en) | 1985-10-30 |
SE443583B (sv) | 1986-03-03 |
GB2140705A (en) | 1984-12-05 |
US4602592A (en) | 1986-07-29 |
GB8417264D0 (en) | 1984-08-08 |
WO1984001968A1 (en) | 1984-05-24 |
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Legal Events
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NAL | Patent in force |
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