SE7801091L - PASSIVATION PROCEDURE - Google Patents
PASSIVATION PROCEDUREInfo
- Publication number
- SE7801091L SE7801091L SE7801091A SE7801091A SE7801091L SE 7801091 L SE7801091 L SE 7801091L SE 7801091 A SE7801091 A SE 7801091A SE 7801091 A SE7801091 A SE 7801091A SE 7801091 L SE7801091 L SE 7801091L
- Authority
- SE
- Sweden
- Prior art keywords
- passivation procedure
- passivation
- procedure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77168177A | 1977-02-24 | 1977-02-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7801091L true SE7801091L (en) | 1978-08-25 |
Family
ID=25092625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7801091A SE7801091L (en) | 1977-02-24 | 1978-01-30 | PASSIVATION PROCEDURE |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS53105978A (en) |
BE (1) | BE864270A (en) |
DE (1) | DE2806493A1 (en) |
FR (1) | FR2382094B1 (en) |
GB (1) | GB1552759A (en) |
IN (1) | IN147572B (en) |
IT (1) | IT1091594B (en) |
PL (1) | PL116754B1 (en) |
SE (1) | SE7801091L (en) |
YU (1) | YU14978A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6312166U (en) * | 1986-07-08 | 1988-01-26 | ||
CA1339817C (en) * | 1989-05-31 | 1998-04-14 | Mitel Corporation | Curing and passivation of spin-on-glasses by a plasma process, and product produced thereby |
JPH0316373U (en) * | 1989-06-28 | 1991-02-19 | ||
RU2534563C2 (en) * | 2013-01-09 | 2014-11-27 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Method of glass application |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1274736C2 (en) * | 1964-12-03 | 1974-02-07 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | |
GB1250099A (en) * | 1969-04-14 | 1971-10-20 | ||
JPS532552B2 (en) * | 1974-03-30 | 1978-01-28 | ||
US3895127A (en) * | 1974-04-19 | 1975-07-15 | Rca Corp | Method of selectively depositing glass on semiconductor devices |
NL7500492A (en) * | 1975-01-16 | 1976-07-20 | Philips Nv | PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS. |
US4007476A (en) * | 1975-04-21 | 1977-02-08 | Hutson Jearld L | Technique for passivating semiconductor devices |
-
1978
- 1978-01-02 IN IN2/CAL/78A patent/IN147572B/en unknown
- 1978-01-04 IT IT19030/78A patent/IT1091594B/en active
- 1978-01-23 YU YU00149/78A patent/YU14978A/en unknown
- 1978-01-30 SE SE7801091A patent/SE7801091L/en unknown
- 1978-02-16 GB GB6178/78A patent/GB1552759A/en not_active Expired
- 1978-02-16 DE DE19782806493 patent/DE2806493A1/en not_active Ceased
- 1978-02-17 FR FR7804586A patent/FR2382094B1/en not_active Expired
- 1978-02-21 JP JP1960078A patent/JPS53105978A/en active Granted
- 1978-02-22 PL PL1978204820A patent/PL116754B1/en unknown
- 1978-02-23 BE BE185438A patent/BE864270A/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE2806493A1 (en) | 1978-08-31 |
IT1091594B (en) | 1985-07-06 |
PL116754B1 (en) | 1981-06-30 |
IN147572B (en) | 1980-04-19 |
FR2382094A1 (en) | 1978-09-22 |
PL204820A1 (en) | 1978-11-06 |
BE864270A (en) | 1978-06-16 |
JPS5626980B2 (en) | 1981-06-22 |
JPS53105978A (en) | 1978-09-14 |
FR2382094B1 (en) | 1985-07-19 |
YU14978A (en) | 1982-10-31 |
GB1552759A (en) | 1979-09-19 |
IT7819030A0 (en) | 1978-01-04 |
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