SE7510482L - ELECTRICAL MEMORY IN INTEGRATED TECHNOLOGY - Google Patents
ELECTRICAL MEMORY IN INTEGRATED TECHNOLOGYInfo
- Publication number
- SE7510482L SE7510482L SE7510482A SE7510482A SE7510482L SE 7510482 L SE7510482 L SE 7510482L SE 7510482 A SE7510482 A SE 7510482A SE 7510482 A SE7510482 A SE 7510482A SE 7510482 L SE7510482 L SE 7510482L
- Authority
- SE
- Sweden
- Prior art keywords
- electrical memory
- integrated technology
- integrated
- technology
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742445078 DE2445078C3 (en) | 1974-09-20 | Electronic memory produced using integrated technology | |
DE19752505821 DE2505821C3 (en) | 1975-02-12 | 1975-02-12 | Method for operating an electronic memory produced using integrated technology |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7510482L true SE7510482L (en) | 1976-03-22 |
Family
ID=25767729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7510482A SE7510482L (en) | 1974-09-20 | 1975-09-18 | ELECTRICAL MEMORY IN INTEGRATED TECHNOLOGY |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5158078A (en) |
BE (1) | BE833630A (en) |
CH (1) | CH607234A5 (en) |
DK (1) | DK423175A (en) |
FR (1) | FR2285678A1 (en) |
GB (1) | GB1517926A (en) |
IT (1) | IT1042649B (en) |
NL (1) | NL7510941A (en) |
SE (1) | SE7510482L (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654693A (en) * | 1979-10-05 | 1981-05-14 | Hitachi Ltd | Programable rom |
US4542485A (en) * | 1981-01-14 | 1985-09-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit |
JPS6284496A (en) * | 1986-08-25 | 1987-04-17 | Hitachi Ltd | Programmable rom |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS526148B2 (en) * | 1972-05-18 | 1977-02-19 |
-
1975
- 1975-09-09 GB GB36980/75A patent/GB1517926A/en not_active Expired
- 1975-09-16 CH CH1198275A patent/CH607234A5/xx not_active IP Right Cessation
- 1975-09-16 FR FR7528358A patent/FR2285678A1/en active Granted
- 1975-09-17 NL NL7510941A patent/NL7510941A/en not_active Application Discontinuation
- 1975-09-18 IT IT27363/75A patent/IT1042649B/en active
- 1975-09-18 SE SE7510482A patent/SE7510482L/en unknown
- 1975-09-19 DK DK423175A patent/DK423175A/en unknown
- 1975-09-19 BE BE160215A patent/BE833630A/en unknown
- 1975-09-20 JP JP11420675A patent/JPS5158078A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DK423175A (en) | 1976-03-21 |
FR2285678A1 (en) | 1976-04-16 |
NL7510941A (en) | 1976-03-23 |
JPS5158078A (en) | 1976-05-21 |
CH607234A5 (en) | 1978-11-30 |
BE833630A (en) | 1976-03-19 |
GB1517926A (en) | 1978-07-19 |
FR2285678B1 (en) | 1979-03-23 |
IT1042649B (en) | 1980-01-30 |
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