SE524009C2 - Avstämbar anordning för akustisk våg samt förfarande för avstämning av anordning för akustisk våg - Google Patents
Avstämbar anordning för akustisk våg samt förfarande för avstämning av anordning för akustisk vågInfo
- Publication number
- SE524009C2 SE524009C2 SE0203155A SE0203155A SE524009C2 SE 524009 C2 SE524009 C2 SE 524009C2 SE 0203155 A SE0203155 A SE 0203155A SE 0203155 A SE0203155 A SE 0203155A SE 524009 C2 SE524009 C2 SE 524009C2
- Authority
- SE
- Sweden
- Prior art keywords
- electric field
- acoustic wave
- piezoelectric substrate
- frequency
- tuning
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims abstract description 100
- 230000005684 electric field Effects 0.000 claims abstract description 84
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 24
- 230000010287 polarization Effects 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000002178 crystalline material Substances 0.000 claims description 3
- 239000011222 crystalline ceramic Substances 0.000 claims description 2
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000012814 acoustic material Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
- H03H2009/02188—Electrically tuning
- H03H2009/02196—Electrically tuning operating on the FBAR element, e.g. by direct application of a tuning DC voltage
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0203155A SE524009C2 (sv) | 2002-10-25 | 2002-10-25 | Avstämbar anordning för akustisk våg samt förfarande för avstämning av anordning för akustisk våg |
PCT/SE2003/001648 WO2004038915A1 (fr) | 2002-10-24 | 2003-10-23 | Dispositif a onde acoustique accordable |
AU2003274861A AU2003274861A1 (en) | 2002-10-24 | 2003-10-23 | Tunable acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0203155A SE524009C2 (sv) | 2002-10-25 | 2002-10-25 | Avstämbar anordning för akustisk våg samt förfarande för avstämning av anordning för akustisk våg |
Publications (3)
Publication Number | Publication Date |
---|---|
SE0203155D0 SE0203155D0 (sv) | 2002-10-25 |
SE0203155L SE0203155L (sv) | 2004-04-25 |
SE524009C2 true SE524009C2 (sv) | 2004-06-15 |
Family
ID=20289368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0203155A SE524009C2 (sv) | 2002-10-24 | 2002-10-25 | Avstämbar anordning för akustisk våg samt förfarande för avstämning av anordning för akustisk våg |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2003274861A1 (fr) |
SE (1) | SE524009C2 (fr) |
WO (1) | WO2004038915A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060001329A1 (en) * | 2004-06-30 | 2006-01-05 | Valluri Rao | FBAR device frequency stabilized against temperature drift |
US11025223B2 (en) * | 2016-01-15 | 2021-06-01 | Telefonaktiebolaget Lm Ericsson (Publ) | Miniature tunable filters |
CN117792332B (zh) * | 2024-02-23 | 2024-05-03 | 电子科技大学 | 一种基于大应力加载结构的电调谐薄膜体声波谐振器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19622013A1 (de) * | 1996-05-31 | 1997-12-11 | Siemens Ag | Mit akustischen Oberflächenwellen arbeitendes akustoelektronisches Bauelement |
AU2001273465A1 (en) * | 2000-07-13 | 2002-01-30 | Rutgers, The State University | Integrated tunable surface acoustic wave technology and systems provided thereby |
US6407649B1 (en) * | 2001-01-05 | 2002-06-18 | Nokia Corporation | Monolithic FBAR duplexer and method of making the same |
-
2002
- 2002-10-25 SE SE0203155A patent/SE524009C2/sv not_active IP Right Cessation
-
2003
- 2003-10-23 WO PCT/SE2003/001648 patent/WO2004038915A1/fr not_active Application Discontinuation
- 2003-10-23 AU AU2003274861A patent/AU2003274861A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2003274861A1 (en) | 2004-05-13 |
WO2004038915A1 (fr) | 2004-05-06 |
SE0203155L (sv) | 2004-04-25 |
SE0203155D0 (sv) | 2002-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Liu et al. | A comprehensive review on piezoelectric energy harvesting technology: Materials, mechanisms, and applications | |
Eom et al. | Thin-film piezoelectric MEMS | |
Shung et al. | Piezoelectric materials for high frequency medical imaging applications: A review | |
Ibrahim et al. | A review on frequency tuning methods for piezoelectric energy harvesting systems | |
US9117593B2 (en) | Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs | |
Uchino | Piezoelectric ceramics for transducers | |
US3955160A (en) | Surface acoustic wave device | |
US6605849B1 (en) | MEMS analog frequency divider | |
KR20140078702A (ko) | 조합된 두께 및 폭 진동 모드들을 갖는 압전 공진기 | |
JP2004134370A (ja) | スイッチ | |
Kang et al. | Air-gap type film bulk acoustic resonator using flexible thin substrate | |
Gupta et al. | Multiferroic cantilever for power generation using dual functionality | |
WO2011053253A1 (fr) | Résonateur à ondes acoustiques de surface | |
CN115603698B (zh) | 一种基于弹性软化效应的可调谐薄膜体声波谐振器 | |
SE524009C2 (sv) | Avstämbar anordning för akustisk våg samt förfarande för avstämning av anordning för akustisk våg | |
Piazza et al. | AlN contour-mode vibrating RF MEMS for next generation wireless communications | |
Tressler et al. | A comparison of the underwater acoustic performance of single crystal versus piezoelectric ceramic-based “cymbal” projectors | |
JP2000165188A (ja) | 圧電共振子 | |
Ralib et al. | Silicon compatible Acoustic wave resonators: Design, fabrication and performance | |
Kim et al. | The effects of electrodes patterned onto the piezoelectric thin film on frequency response characteristics of PMN-PT MEMS acoustic actuators | |
Lin | Temperature-compensated and high-q piezoelectric aluminum nitride lamb wave resonators for timing and frequency control applications | |
JP2000341077A (ja) | 圧電共振子 | |
JP5433697B2 (ja) | 界面音響波デバイス | |
Zhu et al. | Intrinsically switchable contour mode acoustic wave resonators based on barium titanate thin films | |
US3440550A (en) | Zinc oxide maximum efficiency transverse wave crystals and devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |