SE433788B - Anordning innefattande ett skikt av direktgaphalvledarmaterial av p-typ i intim kontakt med ett elektriskt hoggradigt ledande, genomsynligt material - Google Patents
Anordning innefattande ett skikt av direktgaphalvledarmaterial av p-typ i intim kontakt med ett elektriskt hoggradigt ledande, genomsynligt materialInfo
- Publication number
- SE433788B SE433788B SE7801408A SE7801408A SE433788B SE 433788 B SE433788 B SE 433788B SE 7801408 A SE7801408 A SE 7801408A SE 7801408 A SE7801408 A SE 7801408A SE 433788 B SE433788 B SE 433788B
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- inp
- highly conductive
- indium
- polycrystalline
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000013078 crystal Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 17
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 16
- 229910003437 indium oxide Inorganic materials 0.000 claims description 11
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 5
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims 6
- 108010067445 RA V Proteins 0.000 claims 1
- TUBWTFZPLDUNIL-HJJYVODLSA-N tpc-a Chemical compound O.O.O.O.O.C1=CC(OC)=CC=C1C[C@H](N(C)C(=O)[C@H](C)NC(=O)[C@H](C)NC(=O)[C@H](N(C1=O)C)C2)C(=O)N[C@H](C)C(=O)N(C)[C@@H]1CC(C=C1)=CC=C1OC1=CC2=CC=C1O.C1=CC(OC)=CC=C1C[C@H](N(C)C(=O)[C@H](C)NC(=O)[C@H](C)NC(=O)[C@H](N(C1=O)C)C2)C(=O)N[C@H](C)C(=O)N(C)[C@@H]1CC(C=C1)=CC=C1OC1=CC2=CC=C1O.C1=CC(OC)=CC=C1C[C@H](N(C)C(=O)[C@H](C)NC(=O)[C@H](C)NC(=O)[C@H](N(C1=O)C)C2)C(=O)N[C@H](C)C(=O)N(C)[C@@H]1CC(C=C1)=CC=C1OC1=CC2=CC=C1O.C1=CC(OC)=CC=C1C[C@H](N(C)C(=O)[C@H](C)NC(=O)[C@H](C)NC(=O)[C@H](N(C1=O)C)C2)C(=O)N[C@H](C)C(=O)N(C)[C@@H]1CC(C=C1)=CC=C1OC1=CC2=CC=C1O TUBWTFZPLDUNIL-HJJYVODLSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 50
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 36
- 238000000034 method Methods 0.000 description 28
- 229910044991 metal oxide Inorganic materials 0.000 description 18
- 150000004706 metal oxides Chemical class 0.000 description 18
- 239000000203 mixture Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241001537210 Perna Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- CQMUOFGWJSNFPX-UHFFFAOYSA-N [O].[Sn].[Sn] Chemical compound [O].[Sn].[Sn] CQMUOFGWJSNFPX-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000003679 cervix uteri Anatomy 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010961 commercial manufacture process Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- -1 tungsten halogen Chemical class 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Landscapes
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/769,107 US4121238A (en) | 1977-02-16 | 1977-02-16 | Metal oxide/indium phosphide devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7801408L SE7801408L (sv) | 1978-08-17 |
| SE433788B true SE433788B (sv) | 1984-06-12 |
Family
ID=25084478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7801408A SE433788B (sv) | 1977-02-16 | 1978-02-07 | Anordning innefattande ett skikt av direktgaphalvledarmaterial av p-typ i intim kontakt med ett elektriskt hoggradigt ledande, genomsynligt material |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4121238A (it) |
| JP (1) | JPS53102688A (it) |
| BE (1) | BE863929A (it) |
| CA (1) | CA1090456A (it) |
| DE (1) | DE2805582A1 (it) |
| ES (1) | ES467047A1 (it) |
| FR (1) | FR2381393A1 (it) |
| GB (1) | GB1547140A (it) |
| IL (1) | IL54018A (it) |
| IT (1) | IT7867314A0 (it) |
| NL (1) | NL7801559A (it) |
| SE (1) | SE433788B (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2376513A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Dispositif semiconducteur muni d'un film protecteur |
| US4166880A (en) * | 1978-01-18 | 1979-09-04 | Solamat Incorporated | Solar energy device |
| JPS55108781A (en) * | 1979-02-15 | 1980-08-21 | Fuji Xerox Co Ltd | Light receiving element |
| US4291323A (en) * | 1980-05-01 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | Indium phosphide arsenide based devices |
| JPS6022381A (ja) * | 1983-07-18 | 1985-02-04 | Nippon Telegr & Teleph Corp <Ntt> | 太陽電池 |
| US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
| US5021365A (en) * | 1986-06-16 | 1991-06-04 | International Business Machines Corporation | Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning |
| IL84118A (en) * | 1987-10-07 | 1991-03-10 | Semiconductor Devices Tadiran | Process for ii-vi compound epitaxy |
| US5105291A (en) * | 1989-11-20 | 1992-04-14 | Ricoh Company, Ltd. | Liquid crystal display cell with electrodes of substantially amorphous metal oxide having low resistivity |
| JP2912506B2 (ja) * | 1992-10-21 | 1999-06-28 | シャープ株式会社 | 透明導電膜の形成方法 |
| US6344608B2 (en) * | 1998-06-30 | 2002-02-05 | Canon Kabushiki Kaisha | Photovoltaic element |
| SE0400582D0 (sv) * | 2004-03-05 | 2004-03-05 | Forskarpatent I Uppsala Ab | Method for in-line process control of the CIGS process |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
| US3560812A (en) * | 1968-07-05 | 1971-02-02 | Gen Electric | High selectively electromagnetic radiation detecting devices |
| US3614549A (en) * | 1968-10-15 | 1971-10-19 | Ibm | A semiconductor recombination radiation device |
| IL46896A (en) * | 1974-03-27 | 1977-07-31 | Innotech Corp | Semiconductive device |
| US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
| US4024558A (en) * | 1974-03-27 | 1977-05-17 | Innotech Corporation | Photovoltaic heterojunction device employing a glassy amorphous material as an active layer |
| US3978510A (en) * | 1974-07-29 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Heterojunction photovoltaic devices employing i-iii-vi compounds |
-
1977
- 1977-02-16 US US05/769,107 patent/US4121238A/en not_active Expired - Lifetime
- 1977-12-29 CA CA294,119A patent/CA1090456A/en not_active Expired
-
1978
- 1978-02-07 SE SE7801408A patent/SE433788B/sv unknown
- 1978-02-10 DE DE19782805582 patent/DE2805582A1/de not_active Ceased
- 1978-02-10 IL IL54018A patent/IL54018A/xx unknown
- 1978-02-10 NL NL7801559A patent/NL7801559A/xx not_active Application Discontinuation
- 1978-02-14 BE BE185140A patent/BE863929A/xx not_active IP Right Cessation
- 1978-02-15 IT IT7867314A patent/IT7867314A0/it unknown
- 1978-02-15 FR FR7804287A patent/FR2381393A1/fr active Granted
- 1978-02-16 JP JP1600978A patent/JPS53102688A/ja active Pending
- 1978-02-16 ES ES467047A patent/ES467047A1/es not_active Expired
- 1978-02-16 GB GB6147/78A patent/GB1547140A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT7867314A0 (it) | 1978-02-15 |
| IL54018A (en) | 1980-06-30 |
| BE863929A (fr) | 1978-05-29 |
| ES467047A1 (es) | 1978-11-01 |
| JPS53102688A (en) | 1978-09-07 |
| US4121238A (en) | 1978-10-17 |
| GB1547140A (en) | 1979-06-06 |
| FR2381393A1 (fr) | 1978-09-15 |
| IL54018A0 (en) | 1978-04-30 |
| NL7801559A (nl) | 1978-08-18 |
| CA1090456A (en) | 1980-11-25 |
| SE7801408L (sv) | 1978-08-17 |
| DE2805582A1 (de) | 1978-08-17 |
| FR2381393B1 (it) | 1982-04-16 |
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