SE418433B - SEMICONDUCTOR ELEMENT WITH A LAYER OF A POLYMERIC SILOXAN-CONTAINING MEMBRANE MEMBRANE MATERIAL WITH VARIABLE PERMEABILITY APPLIED ON SELECTED SURFACE OF THE ELEMENT - Google Patents
SEMICONDUCTOR ELEMENT WITH A LAYER OF A POLYMERIC SILOXAN-CONTAINING MEMBRANE MEMBRANE MATERIAL WITH VARIABLE PERMEABILITY APPLIED ON SELECTED SURFACE OF THE ELEMENTInfo
- Publication number
- SE418433B SE418433B SE7613873A SE7613873A SE418433B SE 418433 B SE418433 B SE 418433B SE 7613873 A SE7613873 A SE 7613873A SE 7613873 A SE7613873 A SE 7613873A SE 418433 B SE418433 B SE 418433B
- Authority
- SE
- Sweden
- Prior art keywords
- siloxan
- polymeric
- layer
- selected surface
- membrane
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 230000035699 permeability Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63986975A | 1975-12-11 | 1975-12-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7613873L SE7613873L (en) | 1977-06-12 |
| SE418433B true SE418433B (en) | 1981-05-25 |
Family
ID=24565904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7613873A SE418433B (en) | 1975-12-11 | 1976-12-09 | SEMICONDUCTOR ELEMENT WITH A LAYER OF A POLYMERIC SILOXAN-CONTAINING MEMBRANE MEMBRANE MATERIAL WITH VARIABLE PERMEABILITY APPLIED ON SELECTED SURFACE OF THE ELEMENT |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5921165B2 (en) |
| DE (1) | DE2655725A1 (en) |
| FR (1) | FR2335044A1 (en) |
| SE (1) | SE418433B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1563421A (en) * | 1975-12-18 | 1980-03-26 | Gen Electric | Polyimide-siloxane copolymer protective coating for semiconductor devices |
| GB1585477A (en) * | 1976-01-26 | 1981-03-04 | Gen Electric | Semiconductors |
| JPS6040705B2 (en) * | 1978-06-26 | 1985-09-12 | インタ−ナシヨナル・ビジネス・マシ−ンンズ・コ−ポレ−シヨン | Method of forming protective coating for electronic circuits |
| IL59344A (en) * | 1979-03-01 | 1983-06-15 | M & T Chemicals Inc | Precursor solutions of silicone copolymer materials made from a siloxane containing a bis-amino aryl ether or thioether |
| DE19500235A1 (en) * | 1995-01-05 | 1996-07-11 | Roth Technik Gmbh | Cover layer for electrical conductors or semiconductors |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325450A (en) * | 1965-05-12 | 1967-06-13 | Gen Electric | Polysiloxaneimides and their production |
| US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
| US3553282A (en) * | 1969-09-08 | 1971-01-05 | Gen Electric | Siloxane containing polyamide acid blends |
| US3740305A (en) * | 1971-10-01 | 1973-06-19 | Gen Electric | Composite materials bonded with siloxane containing polyimides |
| JPS5421073B2 (en) * | 1974-04-15 | 1979-07-27 | ||
| GB1553243A (en) * | 1975-08-04 | 1979-09-26 | Gen Electric | Semiconductor |
| DE2655803C2 (en) * | 1975-12-11 | 1986-04-17 | General Electric Co., Schenectady, N.Y. | Method for treating a selected surface area of a semiconductor element |
-
1976
- 1976-12-09 SE SE7613873A patent/SE418433B/en not_active IP Right Cessation
- 1976-12-09 DE DE19762655725 patent/DE2655725A1/en not_active Ceased
- 1976-12-10 FR FR7637217A patent/FR2335044A1/en active Granted
- 1976-12-10 JP JP14786076A patent/JPS5921165B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5921165B2 (en) | 1984-05-18 |
| FR2335044B1 (en) | 1982-09-17 |
| FR2335044A1 (en) | 1977-07-08 |
| SE7613873L (en) | 1977-06-12 |
| DE2655725A1 (en) | 1977-06-16 |
| JPS5284974A (en) | 1977-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
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