SE390084B - Tyristor - Google Patents

Tyristor

Info

Publication number
SE390084B
SE390084B SE7300366A SE7300366A SE390084B SE 390084 B SE390084 B SE 390084B SE 7300366 A SE7300366 A SE 7300366A SE 7300366 A SE7300366 A SE 7300366A SE 390084 B SE390084 B SE 390084B
Authority
SE
Sweden
Prior art keywords
thyristor
Prior art date
Application number
SE7300366A
Other languages
English (en)
Swedish (sv)
Other versions
SE7300366L (tr
Inventor
J Burtscher
P Voss
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7300366L publication Critical patent/SE7300366L/xx
Publication of SE390084B publication Critical patent/SE390084B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
SE7300366A 1972-01-11 1973-01-11 Tyristor SE390084B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2201041A DE2201041C3 (de) 1972-01-11 1972-01-11 Thyristor

Publications (2)

Publication Number Publication Date
SE7300366L SE7300366L (tr) 1973-07-12
SE390084B true SE390084B (sv) 1976-11-29

Family

ID=5832681

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7300366A SE390084B (sv) 1972-01-11 1973-01-11 Tyristor

Country Status (8)

Country Link
JP (2) JPS5325479B2 (tr)
CH (1) CH541870A (tr)
DE (1) DE2201041C3 (tr)
FR (1) FR2167537B1 (tr)
GB (1) GB1377420A (tr)
IT (1) IT972621B (tr)
NL (1) NL7217455A (tr)
SE (1) SE390084B (tr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb

Also Published As

Publication number Publication date
CH541870A (de) 1973-09-15
FR2167537A1 (tr) 1973-08-24
SE7300366L (tr) 1973-07-12
DE2201041C3 (de) 1980-08-07
FR2167537B1 (tr) 1978-01-13
JPS5347673B2 (tr) 1978-12-22
GB1377420A (en) 1974-12-18
DE2201041B2 (de) 1979-11-29
IT972621B (it) 1974-05-31
NL7217455A (tr) 1973-07-13
JPS5325479B2 (tr) 1978-07-27
DE2201041A1 (de) 1973-07-19
JPS5386182A (en) 1978-07-29
JPS4881488A (tr) 1973-10-31

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