IT972621B - Tiristore - Google Patents

Tiristore

Info

Publication number
IT972621B
IT972621B IT3323572A IT3323572A IT972621B IT 972621 B IT972621 B IT 972621B IT 3323572 A IT3323572 A IT 3323572A IT 3323572 A IT3323572 A IT 3323572A IT 972621 B IT972621 B IT 972621B
Authority
IT
Italy
Prior art keywords
tyristor
Prior art date
Application number
IT3323572A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT972621B publication Critical patent/IT972621B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
IT3323572A 1972-01-11 1972-12-20 Tiristore IT972621B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722201041 DE2201041C3 (de) 1972-01-11 1972-01-11 Thyristor

Publications (1)

Publication Number Publication Date
IT972621B true IT972621B (it) 1974-05-31

Family

ID=5832681

Family Applications (1)

Application Number Title Priority Date Filing Date
IT3323572A IT972621B (it) 1972-01-11 1972-12-20 Tiristore

Country Status (8)

Country Link
JP (2) JPS5325479B2 (it)
CH (1) CH541870A (it)
DE (1) DE2201041C3 (it)
FR (1) FR2167537B1 (it)
GB (1) GB1377420A (it)
IT (1) IT972621B (it)
NL (1) NL7217455A (it)
SE (1) SE390084B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
DE2945391A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem abschaltbaren emitter-kurzschluss
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb

Also Published As

Publication number Publication date
SE390084B (sv) 1976-11-29
NL7217455A (it) 1973-07-13
FR2167537B1 (it) 1978-01-13
JPS5347673B2 (it) 1978-12-22
JPS4881488A (it) 1973-10-31
FR2167537A1 (it) 1973-08-24
CH541870A (de) 1973-09-15
DE2201041C3 (de) 1980-08-07
SE7300366L (it) 1973-07-12
JPS5386182A (en) 1978-07-29
DE2201041A1 (de) 1973-07-19
JPS5325479B2 (it) 1978-07-27
GB1377420A (en) 1974-12-18
DE2201041B2 (de) 1979-11-29

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