SE387057B - KIT TO CULTURE AN EPIYAXIAL CRYSTAL LAYER ON A SUBSTRATE AND DEVICE FOR PERFORMING THE KIT - Google Patents

KIT TO CULTURE AN EPIYAXIAL CRYSTAL LAYER ON A SUBSTRATE AND DEVICE FOR PERFORMING THE KIT

Info

Publication number
SE387057B
SE387057B SE7102845A SE284571A SE387057B SE 387057 B SE387057 B SE 387057B SE 7102845 A SE7102845 A SE 7102845A SE 284571 A SE284571 A SE 284571A SE 387057 B SE387057 B SE 387057B
Authority
SE
Sweden
Prior art keywords
kit
epiyaxial
culture
substrate
crystal layer
Prior art date
Application number
SE7102845A
Other languages
Swedish (sv)
Inventor
A A Bergh
C R Paola
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE387057B publication Critical patent/SE387057B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE7102845A 1970-03-16 1971-03-05 KIT TO CULTURE AN EPIYAXIAL CRYSTAL LAYER ON A SUBSTRATE AND DEVICE FOR PERFORMING THE KIT SE387057B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1987870A 1970-03-16 1970-03-16

Publications (1)

Publication Number Publication Date
SE387057B true SE387057B (en) 1976-08-30

Family

ID=21795534

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7102845A SE387057B (en) 1970-03-16 1971-03-05 KIT TO CULTURE AN EPIYAXIAL CRYSTAL LAYER ON A SUBSTRATE AND DEVICE FOR PERFORMING THE KIT

Country Status (7)

Country Link
US (1) US3665888A (en)
JP (1) JPS528797B1 (en)
BE (1) BE764313A (en)
FR (1) FR2084623A5 (en)
GB (1) GB1345367A (en)
NL (1) NL155458B (en)
SE (1) SE387057B (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53271B1 (en) * 1971-03-05 1978-01-06
US3933123A (en) * 1971-07-13 1976-01-20 U.S. Philips Corporation Liquid phase epitaxy
BE788374A (en) * 1971-12-08 1973-01-02 Rca Corp PROCESS FOR DEPOSITING AN EPITAXIAL LAYER OF A SEMICONDUCTOR MATERIAL ON THE SURFACE OF A SUBSTRATE
JPS5318151B2 (en) * 1971-12-14 1978-06-13
US3767481A (en) * 1972-04-07 1973-10-23 Rca Corp Method for epitaxially growing layers of a semiconductor material from the liquid phase
FR2202730A1 (en) * 1972-10-17 1974-05-10 Thomson Csf Heated reactor for growth of monocrystals - for producing photosensitive semiconductors, photo-transmitters, infrared detectors etc.
JPS5342230B2 (en) * 1972-10-19 1978-11-09
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
JPS5213510B2 (en) * 1973-02-26 1977-04-14
US4033291A (en) * 1973-03-09 1977-07-05 Tokyo Shibaura Electric Co., Ltd. Apparatus for liquid-phase epitaxial growth
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
JPS5248949B2 (en) * 1974-12-20 1977-12-13
US4028148A (en) * 1974-12-20 1977-06-07 Nippon Telegraph And Telephone Public Corporation Method of epitaxially growing a laminate semiconductor layer in liquid phase
US4110133A (en) * 1976-04-29 1978-08-29 The Post Office Growth of semiconductor compounds by liquid phase epitaxy
US4047986A (en) * 1976-05-10 1977-09-13 Integrated Display Systems, Inc. Epitaxial film formation of a light emitting diode and the product thereof
JPS5270759A (en) * 1976-12-25 1977-06-13 Toshiba Corp Liquid phase growth equipment
US4359012A (en) * 1978-01-19 1982-11-16 Handotai Kenkyu Shinkokai Apparatus for producing a semiconductor device utlizing successive liquid growth
US4235191A (en) * 1979-03-02 1980-11-25 Western Electric Company, Inc. Apparatus for depositing materials on stacked semiconductor wafers
NL185375C (en) * 1980-01-16 1990-03-16 Philips Nv DEVICE FOR THE EPITAXIAL APPLICATION OF A LOW SEMICONDUCTOR MATERIAL.
FR2476690A1 (en) * 1980-02-27 1981-08-28 Radiotechnique Compelec NACELLE USABLE FOR LIQUID PHASE EPITAXIC DEPOSITS AND METHOD OF DEPOSITION INVOLVING SAID NACELLE
US4500367A (en) * 1983-10-31 1985-02-19 At&T Bell Laboratories LPE Growth on group III-V compound semiconductor substrates containing phosphorus
JP2001160540A (en) * 1999-09-22 2001-06-12 Canon Inc Producing device for semiconductor device, liquid phase growing method, liquid phase growing device and solar battery

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2727839A (en) * 1950-06-15 1955-12-20 Bell Telephone Labor Inc Method of producing semiconductive bodies
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
DE1188555B (en) * 1960-05-10 1965-03-11 Wacker Chemie Gmbh Process for the production of highly pure crystalline bodies from nitrides, phosphides or arsenides of III. Main group of the periodic table
BE632279A (en) * 1962-05-14
FR1473984A (en) * 1966-01-10 1967-03-24 Radiotechnique Coprim Rtc Method and device for the production of monocrystalline binary compounds
US3449087A (en) * 1966-06-27 1969-06-10 Commerce Usa Purification by selective crystallization and remelt
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique

Also Published As

Publication number Publication date
FR2084623A5 (en) 1971-12-17
US3665888A (en) 1972-05-30
DE2111945B2 (en) 1977-02-10
JPS528797B1 (en) 1977-03-11
NL7103419A (en) 1971-09-20
NL155458B (en) 1978-01-16
DE2111945A1 (en) 1971-09-23
GB1345367A (en) 1974-01-30
BE764313A (en) 1971-09-16

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