SE383222B - Forfarande och halvledarminnesanordning for genomforande av en minnesfunktion under anvendande av ett flertal minnesceller, som var och en innefattar en skikttransistor med oansluten bas. - Google Patents
Forfarande och halvledarminnesanordning for genomforande av en minnesfunktion under anvendande av ett flertal minnesceller, som var och en innefattar en skikttransistor med oansluten bas.Info
- Publication number
- SE383222B SE383222B SE7309322A SE7309322A SE383222B SE 383222 B SE383222 B SE 383222B SE 7309322 A SE7309322 A SE 7309322A SE 7309322 A SE7309322 A SE 7309322A SE 383222 B SE383222 B SE 383222B
- Authority
- SE
- Sweden
- Prior art keywords
- memory
- leader
- semi
- procedure
- connected base
- Prior art date
Links
- 230000006386 memory function Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27050472A | 1972-07-10 | 1972-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE383222B true SE383222B (sv) | 1976-03-01 |
Family
ID=23031571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7309322A SE383222B (sv) | 1972-07-10 | 1973-07-02 | Forfarande och halvledarminnesanordning for genomforande av en minnesfunktion under anvendande av ett flertal minnesceller, som var och en innefattar en skikttransistor med oansluten bas. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3786443A (OSRAM) |
| JP (1) | JPS4946651A (OSRAM) |
| BE (1) | BE802109A (OSRAM) |
| CA (1) | CA1012243A (OSRAM) |
| DE (1) | DE2334836A1 (OSRAM) |
| FR (1) | FR2192356B1 (OSRAM) |
| GB (1) | GB1413368A (OSRAM) |
| IT (1) | IT991761B (OSRAM) |
| NL (1) | NL7309552A (OSRAM) |
| SE (1) | SE383222B (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142112A (en) * | 1977-05-06 | 1979-02-27 | Sperry Rand Corporation | Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3699542A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing saturation operation |
| US3699540A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing collector-base avalanche breakdown |
| US3699541A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing emitter-base avalanche breakdown |
| US3693173A (en) * | 1971-06-24 | 1972-09-19 | Bell Telephone Labor Inc | Two-terminal dual pnp transistor semiconductor memory |
-
1972
- 1972-07-10 US US00270504A patent/US3786443A/en not_active Expired - Lifetime
-
1973
- 1973-01-19 CA CA161,622A patent/CA1012243A/en not_active Expired
- 1973-07-02 SE SE7309322A patent/SE383222B/xx unknown
- 1973-07-04 GB GB3178473A patent/GB1413368A/en not_active Expired
- 1973-07-09 DE DE19732334836 patent/DE2334836A1/de not_active Withdrawn
- 1973-07-09 BE BE133289A patent/BE802109A/xx unknown
- 1973-07-09 IT IT69047/73A patent/IT991761B/it active
- 1973-07-09 FR FR7325108A patent/FR2192356B1/fr not_active Expired
- 1973-07-09 NL NL7309552A patent/NL7309552A/xx not_active Application Discontinuation
- 1973-07-10 JP JP7718773A patent/JPS4946651A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2334836A1 (de) | 1974-01-31 |
| US3786443A (en) | 1974-01-15 |
| GB1413368A (en) | 1975-11-12 |
| NL7309552A (OSRAM) | 1974-01-14 |
| JPS4946651A (OSRAM) | 1974-05-04 |
| CA1012243A (en) | 1977-06-14 |
| IT991761B (it) | 1975-08-30 |
| FR2192356A1 (OSRAM) | 1974-02-08 |
| BE802109A (fr) | 1973-11-05 |
| FR2192356B1 (OSRAM) | 1978-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL7500550A (nl) | Halfgeleider-geheugeninrichting. | |
| NL7614537A (nl) | Halfgeleidergeheugeninrichting. | |
| SE387460B (sv) | Lagringsanordning av halvledartyp | |
| NL7610325A (nl) | Opslaginrichting. | |
| NL178201C (nl) | Openklapbare cassettehouder. | |
| SE391476B (sv) | Anordning for inskerning av oppningar i ror, serskilt dreneringsror | |
| FI52592C (fi) | Laite kudosviljelmän solujen kasvattamiseksi. | |
| NL7612813A (nl) | Geheugeninrichting. | |
| NL7513365A (nl) | Opslaginrichting. | |
| IT1001109B (it) | Cella di memorizzazione realizzata con dispositivi semiconduttori | |
| NL180892C (nl) | Halfgeleidergeheugen. | |
| NO140844C (no) | Halvlederanordning. | |
| NL7610196A (nl) | Geheugeninrichting. | |
| CH595656B (de) | Zeithaltendes geraet. | |
| NL7603266A (nl) | Geheugeninrichting. | |
| NL7503156A (nl) | Roterende energie-opslaginrichting. | |
| NL7608966A (nl) | Vloeistofopslaginrichting. | |
| NL177267C (nl) | Elektrochemische generator. | |
| NO140843C (no) | Halvlederanordning. | |
| NO152705C (no) | Fremgangsmaate for regulering av elektrodeavstanden i en elektrolysecelle. | |
| NL7313573A (nl) | Geheugeninrichting. | |
| NL162486C (nl) | Reproduktie-inrichting. | |
| SE383222B (sv) | Forfarande och halvledarminnesanordning for genomforande av en minnesfunktion under anvendande av ett flertal minnesceller, som var och en innefattar en skikttransistor med oansluten bas. | |
| CH554048A (de) | Speichereinrichtung. | |
| NL186934B (nl) | Statische bipolaire geheugencel. |