BE802109A - Dispositif memoire a semi-conducteur - Google Patents
Dispositif memoire a semi-conducteurInfo
- Publication number
- BE802109A BE802109A BE133289A BE133289A BE802109A BE 802109 A BE802109 A BE 802109A BE 133289 A BE133289 A BE 133289A BE 133289 A BE133289 A BE 133289A BE 802109 A BE802109 A BE 802109A
- Authority
- BE
- Belgium
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27050472A | 1972-07-10 | 1972-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE802109A true BE802109A (fr) | 1973-11-05 |
Family
ID=23031571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE133289A BE802109A (fr) | 1972-07-10 | 1973-07-09 | Dispositif memoire a semi-conducteur |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3786443A (fr) |
| JP (1) | JPS4946651A (fr) |
| BE (1) | BE802109A (fr) |
| CA (1) | CA1012243A (fr) |
| DE (1) | DE2334836A1 (fr) |
| FR (1) | FR2192356B1 (fr) |
| GB (1) | GB1413368A (fr) |
| IT (1) | IT991761B (fr) |
| NL (1) | NL7309552A (fr) |
| SE (1) | SE383222B (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142112A (en) * | 1977-05-06 | 1979-02-27 | Sperry Rand Corporation | Single active element controlled-inversion semiconductor storage cell devices and storage matrices employing same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3699542A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing saturation operation |
| US3699541A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing emitter-base avalanche breakdown |
| US3699540A (en) * | 1970-12-31 | 1972-10-17 | Bell Telephone Labor Inc | Two-terminal transistor memory utilizing collector-base avalanche breakdown |
| US3693173A (en) * | 1971-06-24 | 1972-09-19 | Bell Telephone Labor Inc | Two-terminal dual pnp transistor semiconductor memory |
-
1972
- 1972-07-10 US US00270504A patent/US3786443A/en not_active Expired - Lifetime
-
1973
- 1973-01-19 CA CA161,622A patent/CA1012243A/en not_active Expired
- 1973-07-02 SE SE7309322A patent/SE383222B/xx unknown
- 1973-07-04 GB GB3178473A patent/GB1413368A/en not_active Expired
- 1973-07-09 BE BE133289A patent/BE802109A/fr unknown
- 1973-07-09 DE DE19732334836 patent/DE2334836A1/de not_active Withdrawn
- 1973-07-09 NL NL7309552A patent/NL7309552A/xx not_active Application Discontinuation
- 1973-07-09 IT IT69047/73A patent/IT991761B/it active
- 1973-07-09 FR FR7325108A patent/FR2192356B1/fr not_active Expired
- 1973-07-10 JP JP7718773A patent/JPS4946651A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE383222B (sv) | 1976-03-01 |
| GB1413368A (en) | 1975-11-12 |
| CA1012243A (en) | 1977-06-14 |
| JPS4946651A (fr) | 1974-05-04 |
| DE2334836A1 (de) | 1974-01-31 |
| US3786443A (en) | 1974-01-15 |
| IT991761B (it) | 1975-08-30 |
| FR2192356A1 (fr) | 1974-02-08 |
| FR2192356B1 (fr) | 1978-07-21 |
| NL7309552A (fr) | 1974-01-14 |
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